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Charge trapping−based reconfigurable two−dimensional transistors and their logic circuit applications
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Pengfei ZHU, Jingbo YANG, Mengyang LIU*, Mengjiao LI*
Science & Technology Review | 2026, 44(5) : 82 - 89
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Science & Technology Review | 2026, 44(5): 82-89
• Papers •
Charge trapping−based reconfigurable two−dimensional transistors and their logic circuit applications
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Pengfei ZHU, Jingbo YANG, Mengyang LIU*, Mengjiao LI*
Affiliations
  • School of Microelectronics, Shanghai University, Shanghai 201800, China
Published: 2026-03-13 doi: 10.3981/j.issn.1000-7857.2025.09.00126
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In the post−Moore era, two−dimensional (2D) materials have emerged as pivotal candidates to transcend silicon's physical limits, leveraging their atomic−scale thickness and exceptional electronic properties. Reconfigurable transistors capable of dynamic P−/N−type polarity switching in a single device architecture further present transformative opportunities for circuit design innovation. Nevertheless, achieving nonvolatile operation in electrostatically gated reconfigurable transistors remains a critical challenge. To address this, this work demonstrates a charge−trapping−mediated nonvolatile reconfigurable field−effect transistor (CTRFET) featuring a WSe2 channel and an engineered Al2O3/HfO2/Al2O3 (AHA) charge−trapping heterostructure, which enables robust and nonvolatile polarity control. A reconfigurable logic gate constructed with two CTRFETs exhibits programmable multifunctional operation through electrical modulation. This dynamic reconfigurability establishes a new design framework for high−density, energy−efficient adaptive hardware, with promising applications spanning programmable electronics, self−adaptive computing systems, and intelligent sensing integrated circuits.

two−dimensional materials  /  reconfigurable transistor  /  nonvolatility  /  reconfigurable circuit  /  charge trapping
Pengfei ZHU, Jingbo YANG, Mengyang LIU, Mengjiao LI. Charge trapping−based reconfigurable two−dimensional transistors and their logic circuit applications[J]. Science & Technology Review, 2026 , 44 (5) : 82 -89 . DOI: 10.3981/j.issn.1000-7857.2025.09.00126
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doi: 10.3981/j.issn.1000-7857.2025.09.00126
  • Receive Date：2025-09-30
  • Online Date：2026-04-10
  • Published：2026-03-13
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  • Received：2025-09-30
  • Revised：2025-12-17
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    School of Microelectronics, Shanghai University, Shanghai 201800, China
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