Science & Technology Review
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2024, 42(8): 29-38
• Exclusive:Key Technologies and Innovation Drive •
Development status and future prospect of the wide band-gap semiconductors
Full
GAO Shuang, ZHENG Yuting, ZHANG Zhiguo
Affiliations
China Electronics Technology Wide BandGap Semiconductors Co., Ltd., Beijing 100041, China
Published: 2024-04-28
doi: 10.3981/j.issn.1000-7857.2023.11.01709
Outline
In recent years, the wide band-gap semiconductors endowed with superior performance, particularly the SiC and GaN, have developed rapidly. As the research focuses in the fields of 5G communications, new energy vehicles, rail transit, military equipment, etc, these semiconductors have supported the development of a trillion-level market, and the new application scenarios are constantly emerging to stimulate new development potential. China has established a relatively complete industrial chain, i. e., from the substrate, epitaxy, design, manufacturing, module, testing to the final application. At the same time, the technology and industrialization ability as well as the independent controllable ability continues to be enhanced. Some of the achievements have been applied, and now the "large size and cost reduction" turns to be the main direction of future development. At present, China as the largest application market has launched the strong driving force of application traction for technology innovation. However, the wide band-gap semiconductor industry also faces many challenges, e. g., the industrial ecological development issues. It is an urgent need to take fully advantages of the“two-wheel drive”of application and research and development to realize the rapid transformation of scientific and technological achievements. It is suggested that the continuous support should be enhanced, under the guidance of policies and the traction of new application scenarios, to systematically enrich the product form and to promote the high-quality development of the whole industrial chain for seizing new opportunities of future applications.
wide band-gap semiconductors
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SiC
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GaN
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5G communication
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enterprise model
GAO Shuang, ZHENG Yuting, ZHANG Zhiguo.
Development status and future prospect of the wide band-gap semiconductors[J].
Science & Technology Review,
2024
, 42
(8)
: 29
-38
.
DOI: 10.3981/j.issn.1000-7857.2023.11.01709
Year 2024 volume 42 Issue 8
PDF
1126
337
Cite this Article
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Article Info
doi: 10.3981/j.issn.1000-7857.2023.11.01709
- Receive Date:2023-11-14
- Online Date:2024-05-22
- Published:2024-04-28