Science & Technology Review
|
2024, 42(2): 50-57
• Exclusive:Frontier of Chip Technology •
Through silicon via filling technologies in superconducting quantum
Full
ZHENG Weiwen1, LUAN Tian1,2, ZHANG Xiang1
Affiliations
1. Yangtze River Delta Industrial Innovation Center for Quantum Technology, Suzhou 215123, China;
2. China Academic of Electronics and Information Technology, Beijing 100041, China
Published: 2024-01-28
doi: 10.3981/j.issn.1000-7857.2024.02.005
Outline
Superconducting quantum is one of the leading candidates in the race to build a quantum computer and multi-layer stacking may be the best solution for the superconducting qubits extending. This paper briefly introduces the characteristics of through silicon via (TSV) filling technology in superconducting quantum chips, and expounds and analyzes various filling technology schemes. The full-filling technologies, represented by electroplating and metal melt filling, have the advantages of high reliability and low overall process complexity but poor compatibility with semiconductor technology. The partial-filling technologies, represented by physical vapor deposition, chemical vapor deposition, atomic layer deposition and fast atomic sequential technique, have the advantages of good compatibility with semiconductor technology, but low reliability and high process complexity. And the new materials electroplating processes may be one promising solution in the future.
superconducting quantum
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multi-layer stacking
/
through silicon via
/
thin film deposition
ZHENG Weiwen, LUAN Tian, ZHANG Xiang.
Through silicon via filling technologies in superconducting quantum[J].
Science & Technology Review,
2024
, 42
(2)
: 50
-57
.
DOI: 10.3981/j.issn.1000-7857.2024.02.005
Year 2024 volume 42 Issue 2
PDF
950
210
Cite this Article
BibTeX
Article Info
doi: 10.3981/j.issn.1000-7857.2024.02.005
- Receive Date:2023-09-22
- Online Date:2024-04-15
- Published:2024-01-28