Science & Technology Review
|
2021, 39(14): 69-82
• Exclusive: Innovation and development of the third generation semiconductor •
Research progress of the third generation semiconductor radiation detector
Full
LIANG Hongwei, LIAO Chuanwu, XIA Xiaochuan, LONG Ze, GENG Xinlei, NIU Mengchen, HAN Zhongyuan
Affiliations
School of Microelectronics, Dalian University of Technology, Dalian 116024, China
Published: 2021-07-28
doi: 10.3981/j.issn.1000-7857.2021.14.007
Outline
As representatives of the third generation semiconductor of the wide band gap, the gallium nitride, the silicon carbide and diamond with high breakdown electric field, high saturated electron rate, high heat conductivity and high displacement threshold, high temperature resistance, high radiation resistance, can be applied as the radiation detector in the space detection, the high energy particle physics, and other fields, with important potential applications. The properties of several third-generation semiconductors, the main preparation methods of the radiation detectors and the testing progress for different radiations are addressed emphatically, and the development trend of third-generation semiconductors in the radiation detection is also prospected. It is proposed that the emergence of the third generation semiconductor radiation detectors will promote the research of nuclear science, space exploration, particle and high energy physics, and play an important role in promoting the national core competitiveness.
third generation semiconductor
/
radiation detectors
/
temperature resistance
/
radiation resistance
/
wide band gap semiconductor
LIANG Hongwei, LIAO Chuanwu, XIA Xiaochuan, LONG Ze, GENG Xinlei, NIU Mengchen, HAN Zhongyuan.
Research progress of the third generation semiconductor radiation detector[J].
Science & Technology Review,
2021
, 39
(14)
: 69
-82
.
DOI: 10.3981/j.issn.1000-7857.2021.14.007
Year 2021 volume 39 Issue 14
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932
171
Cite this Article
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Article Info
doi: 10.3981/j.issn.1000-7857.2021.14.007
- Receive Date:2021-01-22
- Online Date:2021-09-07
- Published:2021-07-28