As a wide band gap semiconductor device, the 4H-SiC power device has the advantages of high voltage, low conduction resistance and good heat dissipation due to its outstanding material features. In recent years, with the gradual commercialization of the devices, the reliability of the devices becomes a new research hotspot. This paper reviews the recent research progress of our research group on the reliability of the 4H-SiC power diodes. The degradation mechanism of the device performance is analyzed in terms of the high temperature storage and the high voltage anti bias property. According to the reliability of the avalanche, the 4H-SiC JBS diodes with the traditional FLRs and the trench FLRs terminal structure is designed and prepared. The results indicate that the trench FLRs can be used in the terminal scheme to effectively improve the capability of the device on the anti repeated avalanche.

4H-SiC  /  diode  /  MOSFET