Due to the scaling challenge faced by silicon transistors, carbon nanotube (CNTs), being one-dimensional quantum material, becomes a candidate for future transistors. Carbon nanotube field effect transistors (CNTFETs) can be realized in several geometrical configurations. This paper begins with a survey of typical CNTFET device geometries, the associated basic operating principles, and the unique properties. Then, it focuses on the recent development of several common CNTFETs, and describes in detail a series of technical innovations and performance improvements in terms of. structural and operating principles. Finally, some key problems about CNTFETs to be solved in future are summarized.

carbon nanotube  /  field effect  /  transistor