Science & Technology Review
|
2016, 34(6): 69-73
• Spescial Issues •
Power semiconductor devices used in electric vehicle drive systems
Full
WEN Xuhui1, NING Puqi1, MENG Jinlei2, ZHANG Jin1, LIU Jun1, KONG Liang3
Affiliations
1. Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences;Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100190, China;
2. Corporate Research Center, ABB(China) Ltd., Beijing 100015, China;
3. Broad-ocean Motor EV Co., Ltd., Beijing 100094, China
Published: 2016-03-28
doi: 10.3981/j.issn.1000-7857.2016.06.007
Outline
On-board motor drive converter is the most important part of electric vehicle (EV) drive while the power semiconductor devices are its core. Comparison and analysis of EV drive converters, from mini car to big bus, are presented in terms of topology, control scheme and various key indexes such as power density etc. It is concluded that power semiconductor chip and its packaging are the highlight of innovation. The development of IGBT chip and its packaging technologies are described. The characteristics of silicon carbide are introduced. Further SiC device and its application research area are also discussed.
electric vehicle
/
convertor
/
insulated gate bipolar transistor
/
silicon carbide device
温旭辉, 宁圃奇, 孟金磊, 张瑾, 刘钧, 孔亮.
车用大功率电力电子器件研究进展.
科技导报,
2016
, 34
(6)
: 69
-73
.
DOI: 10.3981/j.issn.1000-7857.2016.06.007
WEN Xuhui, NING Puqi, MENG Jinlei, ZHANG Jin, LIU Jun, KONG Liang.
Power semiconductor devices used in electric vehicle drive systems[J].
Science & Technology Review,
2016
, 34
(6)
: 69
-73
.
DOI: 10.3981/j.issn.1000-7857.2016.06.007
Year 2016 volume 34 Issue 6
PDF
429
72
Cite this Article
BibTeX
Article Info
doi: 10.3981/j.issn.1000-7857.2016.06.007
- Receive Date:2016-02-03
- Online Date:2016-04-14
- Published:2016-03-28