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GaN Schottky diodes offer significant advantages, including high electron mobility, low on−resistance, and high integration capabilities. These characteristics make them well−suited for applications in power electronics and microwave radio frequency (RF) fields, positioning them as a key enabler for advancing cutting−edge technologies. This paper provides an overview of recent research progress on GaN Schottky diodes, with a particular emphasis on how device structure influences performance. Through continuous structural optimization, the performance of GaN Schottky diodes has been substantially enhanced, demonstrating improvements in both forward and reverse characteristics. Their application scope has expanded from high−voltage environments to RF circuits. Meanwhile, it is recommended that future efforts focus on overcoming existing technical limitations by improving material quality, enhancing device reliability, and reducing manufacturing costs. With the sustained growth of China's integrated circuit industry, GaN Schottky diodes, benefiting from their superior high−frequency and high−voltage performance, are expected to become core components in next−generation electronic devices. In the future, these diodes will find broader applications across various domains and play a more significant role in addressing practical challenges and advancing industrial innovation.
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| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |
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