As Moore's law approaches to the limit, "More than Moore" for 2.5D/3D packaging is entering its historical arena. Through silicon via (TSV) is one of the important representatives in high-end electronics advanced packaging. This paper focuses on the copper plating process which realizes electrical interconnection in TSV technology and systematically summarizes the composition of the formula of copper plating solutions. The key difficulty of the copper plating process lies in the defect-free filling of TSV, and the selection of additives is particularly important. A guide for selection of electroplating solution for TSV metallization electroplating process is then provided. In addition, the external electric field and other process conditions imposed on the plating solution during the plating process will also affect the quality of filling vias. Therefore, TSV copper plating processes of the research teams at home and abroad are summarized for selection of a copper plating process. Finally, the characterization methods for studying the action mechanism of additives in electroplating solutions based on computational simulation and electrochemical testing are briefly summarized, and the progress and shortcomings of current research methods on additives in electroplating solution are discussed.

TSV  /  copper electroplating  /  additives  /  filling process  /  characterization method