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Progress in developing high-voltage SiC power devices
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Science & Technology Review | 2021, 39(14) : 56 - 62
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Science & Technology Review | 2021, 39(14): 56-62
• Exclusive: Innovation and development of the third generation semiconductor •
Progress in developing high-voltage SiC power devices
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BAI Song, LI Shiyan, YANG Xiaolei, FEI Chenxi, LIU Ao, HUANG Runhua, YANG Yong
Affiliations
    State Key Laboratory of Wide-Bandgap Semiconductor Electronic Devices, Nanjing Electronic Devices Institute, Nanjing 210016, China
Published: 2021-07-28 doi: 10.3981/j.issn.1000-7857.2021.14.005
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The SiC power devices are replacing the silicon-based devices in more and more applications, and becoming a research focus. The SiC device technologies have matured in recent years, and the advantages in performance over the Si device are demonstrated in this paper. The development of the high-voltage SiC power devices and some of the latest progresses are discussed.
SiC  /  power  /  MOSFET  /  IGBT
BAI Song, LI Shiyan, YANG Xiaolei, FEI Chenxi, LIU Ao, HUANG Runhua, YANG Yong. Progress in developing high-voltage SiC power devices[J]. Science & Technology Review, 2021 , 39 (14) : 56 -62 . DOI: 10.3981/j.issn.1000-7857.2021.14.005
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Year 2021 volume 39 Issue 14
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doi: 10.3981/j.issn.1000-7857.2021.14.005
  • Receive Date：2020-05-18
  • Online Date：2021-09-07
  • Published：2021-07-28
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  • Received：2020-05-18
  • Revised：2021-02-05
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光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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