Science & Technology Review
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2016, 34(2): 39-42
• Exclusive •
In-situ fabrication and device simulation of molybdenum disulfidesilicon heterojunction solar cell
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LI Shenghao1, DAN Yi1, SHEN Hui1,2
Affiliations
1. Institute for Solar Energy Systems, Sun Yat-sen University, Guangzhou 510006, China;
2. Institute for Solar Energy, Shunde Sun Yat-sen University, Shunde 528000, China
Published: 2016-01-28
doi: 10.3981/j.issn.1000-7857.2016.2.004
Outline
Heterojunction solar cells formed by two-dimensional materials and crystalline silicon are one of the research highlights in the field of solar cells. Most researches focus on the graphene-silicon Schottky junction solar cells. To refine the band-gap structure of these devices, we have fabricated the two-dimensional semiconductor material of n-MoS2, which has a band-gap, on the surface of p-Si to form heterojunction solar cells. Our experiment has revealed the effect of annealing time on the synthesis of MoS2. Dark and light current-voltage curves of MoS2-Si heterojunction are measured and discussed. The heterostructure simulation software wx-AMPS is applied for the efficiency calculation and the energy band analysis. The effects of MoS2 thin film thickness and carrier concentration on the open-circuit voltage are studied.
two-dimension material
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molybdenum disnlfide
/
solar cell
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heterojunction
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J-V character
李圣浩, 但易, 沈辉.
二硫化钼-硅异质结太阳电池的原位制备及器件模拟.
科技导报,
2016
, 34
(2)
: 39
-42
.
DOI: 10.3981/j.issn.1000-7857.2016.2.004
LI Shenghao, DAN Yi, SHEN Hui.
In-situ fabrication and device simulation of molybdenum disulfidesilicon heterojunction solar cell[J].
Science & Technology Review,
2016
, 34
(2)
: 39
-42
.
DOI: 10.3981/j.issn.1000-7857.2016.2.004
Year 2016 volume 34 Issue 2
PDF
556
195
Cite this Article
BibTeX
Article Info
doi: 10.3981/j.issn.1000-7857.2016.2.004
- Receive Date:2015-08-18
- Online Date:2016-02-04
- Published:2016-01-28