Latest ArticlesSolid-state lasers have the advantages of realizing laser outputs with a high energy and a high peak power, having potential applications in civil and military fields (i.e., remote sensing, environmental monitoring, medical treatment and optoelectronic countermeasure). Rare-earth ions doped sesquioxide materials as one of the most promising gain media have attracted recent attention due to their low phonon energy, low thermal expansion coefficient and high thermal conductivity. However, large-size sesquioxide single crystals with a good optical quality are difficult to grow because of the high melting points (i.e., >2 400 ℃) and phase transition point at 2 280 ℃. Fortunately, the sintering of sesquioxide ceramics as an alternative way to prepare laser host materials. It is possible to obtain the materials with a large volume and a high doping concentration, showing a superiority in large-scale production, a feasibility of shape control and better mechanical properties.
To achieve high-efficiency and high-power laser oscillation from sesquioxide ceramics, it is crucial to eliminate the main scattering centers inside microstructures, i.e., residual pores and secondary phases. Raw powders with less agglomeration and high sinterability, combined with appropriate molding methods are fundamental for producing compacts with small pore size and uniform microstructures. This is favorable to avoid differentiate densification, degrading the optical homogeneity and transparency. During the sintering process, it is essential for pores to remain at grain boundaries until the final full densification. This prevents the formation of intragranular pores that are hard to remove. The effective control of grain boundary migration can be achieved to prevent pore-boundary separation through the addition of suitable sintering additives, regulation of sintering atmospheres (i.e., vacuum, hydrogen and oxygen), and the use of advanced sintering techniques (i.e., microwave sintering, spark plasma sintering or two-step sintering, etc.). In addition, pressure assisted sintering, including hot pressing and hot isostatic pressing can also improve the densification rate and facilitate the effective removal of residual pores. This even enables the full densification of sesquioxide ceramics without using sintering additives. Zirconia is once widely used as a sintering aid for sesquioxide transparent ceramics. However, it can severely degrade the laser performance of sesquioxide ceramics due to the occurrence of photodarkening phenomenon under high-power pump beam excitation. This may be attributed to the charge imbalance between Zr4+ and host cation ions. Consequently, the introduced point defects act as acceptors for the electrons of excited laser ions, forming Zr3+ color centers that cause a broad absorption in a wavelength range of 400-700 nm. This seriously affects the laser oscillation efficiency. Therefore, in addition to achieving laser-grade quality compared to single crystals, minimizing the use of sintering additives or regulating the lattice defects are also considered in the fabrication process of sesquioxide ceramics.
In general, chemical co-precipitation process for synthesizing well-dispersed powders, combined with vacuum sintering and hot isostatic pressing sintering, is considered as an effective way for fabricating high-quality sesquioxide transparent ceramics. This approach provides a great driving force for densification through well controlling grain boundary diffusion and migration. However, it is necessary to determine suitable sintering curves and microstructure morphology before hot isostatic pressing.
At present, solid-state lasers based on sesquioxide ceramics primarily emphasize the near-infrared wavelength range. These lasers can be categorized into applications near 1 μm (doped with Yb3+ and Nd3+), 2 μm (doped with Tm3+ and Ho3+), as well as 1.6 μm and 3 μm (doped with Er3+), with significant achievements in both high power and ultra-short pulse laser outputs. It is noteworthy that Konoshima Chemical Co. and World-Lab Co. currently dominate the market with their high-quality sesquioxide laser ceramics. it is imperative to elucidate the effect of lattice defects on the laser performance in the future development of sesquioxide laser ceramics. Breakthroughs in fabrication technologies for large-size ceramics with a high optical homogeneity are crucial for laser engineering applications. Complex structure design is also essential to optimize thermal management in high-power laser systems. In addition, there should be also a focus on synthesizing single crystals through sintering methods, indicating a potential for obtaining new laser materials with heavily active ions doping and composite structures. A broad range of laser applications from sesquioxide transparent ceramics can be anticipated through the continuous improvement of powder synthesis, molding methods and sintering techniques.
Conventional transparent materials can be primarily divided into four categories, i.e., glasses, polymers, single crystals, and transparent ceramics. Growing large single crystals with high melting points is difficult, and glass and polymers have poor mechanical and chemical stability. These shortcomings limit their applications. Transparent ceramics are favored because of their high refractive index, high hardness, high strength, high thermal conductivity, and high chemical stability. In 2005, La2Hf2O7 was fabricated into transparent ceramics with a high density and a high atomic number, having a great potential in the detection field of scintillators. Since then, A2B2O7 transparent ceramics has attracted much attention. The structure of A2B2O7 ceramics is mainly determined by the radius ratio of A-site and B-site ions (rA/rB), and includes three structures (i.e., fluorite structure (rA/rB<1.46), pyrochlore structure (1.46<rA/rB<1.78) and monoclinic structure (rA/rB>1.78)). While, only the fluorite- and pyrochlore-structure A2B2O7 ceramics could be transparent monolith when sintered at proper temperature and pressure.
A2B2O7 ceramics with fluorite and pyrochlore two-phase coexisting structures have the advantage of smaller grains, compared with conventional A2B2O7 transparent ceramics with single-phase structures. The mechanical properties of two-phase coexisting structures ceramics can be improved due to the smaller grains. LaLuZr2O7 transparent ceramics with two phases of fluorite and pyrochlore were fabricated in 2014. Two phases are uniformly distributed in the ceramic and the average grain size of the ceramic is only 2-3μm. The in-line transmittance of LaLuZr2O7 transparent ceramic is 73.4% at 1 100 nm due to the close refractive index between the two phases of fluorite and pyrochlore, and the scattering of light across the interface between the two phases is negligible. In 2019, (La0.2Nd0.2Sm0.2Gd0.2Yb0.2)2Zr2O7 was fabricated into transparent ceramics with a fluorite and pyrochlore two-phase coexisting structure. Compared with conventional transparent ceramics, high-entropy transparent ceramics may have better mechanical properties, corrosion resistance, and high-temperature resistance. The enhanced atomic disorder due to multi-element doping in high-entropy ceramics makes it a promising material for high-temperature windows with a lower thermal conductivity. However, there are some challenges in the preparation of two-phase coexistence transparent A2B2O7 ceramics. In some previous reports on A2B2O7 transparent ceramics with two-phase coexistence, the transmittance of the ceramics was severely reduced when there was a large difference in the grain sizes of the fluorite and pyrochlore phases. It is necessary to ensure that the grain growth rates of the pyrochlore and fluorite phases are similar during sintering.
Transparent ceramic scintillators of La2Hf2O7:Ti4+ were fabricated in 2005. The transmittance of La2Hf2O7:Ti4+ transparent ceramics at 600-800 nm is close to 60%. La2Hf2O7:Ti4+ transparent ceramics gain a high X-ray stopping power due to its high density and high atomic number. The integrated emission intensity of La2Hf2O7:Ti4+ transparent ceramics is 1.5 times greater than that of Bi4Ge3O12 single crystals for the same size and the same excitation conditions. In 2019, Tb2Hf2O7 was fabricated into transparent ceramics. Tb2Hf2O7 transparent ceramic ceramics perform well in the Faraday magneto-optical effect tests, having higher measured Verdet constants than commercial Tb3Ga5O12 single crystals and a potential application as an excellent magneto-optical material. It is indicated that the magneto-optical properties of magneto-optical materials are related to the concentration of Tb3+ in the materials, and the higher the Tb3+ concentration is, the better the magneto-optical properties will be. Tb2Hf2O7 transparent ceramics can be doped with higher concentrations of Tb3+ due to the structural advantages of A2B2O7, thus having better magneto-optical properties rather than garnet-structured Tb3Ga5O12 single crystal.
This review represented the preparation methods, performances, and potential applications of A2B2O7 transparent ceramic. A2B2O7 transparent ceramics have the characteristics of a high melting point, a high density, and a high refractive index, which are potentially valuable in the fields of optical material. However, the optical loss and optical homogeneity of A2B2O7 transparent ceramics are difficult to guarantee, a further study of optical quality improvement for A2B2O7 transparent ceramics is still needed. At present, the preparation process of A2B2O7 transparent ceramics is still immature, there are many residual pores in the sintered A2B2O7 transparent ceramics, affecting the optical quality of the A2B2O7 transparent ceramics. It is necessary to optimize the raw powder preparation process and add sintering additives to reduce the pores in the sintered A2B2O7 transparent ceramics.
Although A2B2O7 transparent ceramics have great application prospects in solid-state lasers, the low thermal conductivity of A2B2O7 transparent ceramics makes heat dissipation a challenge. If A2B2O7 transparent ceramics can be used in solid-state lasers, a superior heat dissipation system needs to be designed. In summary, A2B2O7 transparent ceramics is a promising transparent material, but there are still many problems to be solved before the application.
For the favorable physicochemical properties, high fluorescence conversion efficiencies, a relatively short fluorescence lifetime, and an efficient spectral congruence between excitation and ultraviolet/blue LED emission spectra, Ce3+-doped garnet-based fluorescent materials can be used in encompassing lighting, displays, medical imaging, etc.. For leveraging the diverse cation sites within a garnet structure, the emission wavelength of Ce3+ can be continuously adjusted from 460 nm to 610 nm via the incorporation of varied matrix chemical constituents. This versatile tunability broadens the horizons of their potential applications and augments the repertoire of materials available for advancing Ce3+ luminescence theory. However, recent work on Ce3+-doped garnet-based fluorescent materials has unveiled certain anomalies and even contradictions within the characteristics and the emission wavelength modulation theory, becoming one of the prominent bottlenecks hindering the development of this material. To address this issue, this review represented the relative theories of substrate chemical component substitution and the modulation of Ce3+ emission wavelengths. The review also summarized recent advancements in Ce3+-doped garnet-based fluorescent materials, and the influence of ion substitution on Ce3+ luminescence performance with the distortion factor of [CeO8].
This review discussed the Ce3+-doped yttrium aluminum garnet structure as a prototype and comprehensively analyzed the impacts of commonly used doping ions that occupy the [AO8], [BO6], and [CO4] sites on the emission wavelength, thermal quenching resistance, and the [CeO8] distortion factor of Ce3+.
The ion substitution of a single lattice generally necessitates that the substituting ion and the substituted ion have the same valence state and exhibit a minimal disparity in atomic radius. In the case of [AO8] lattice substitution, Y3+ can be replaced with rare-earth ions, i.e., Lu3+, Tb3+, Gd3+, and La3+. When the radius of the doped rare-earth ions is greater that that of Y3+, the emission wavelength of Ce3+ shifts towards the red end of the spectrum. Conversely, when the radius is smaller, the shift occurs in the opposite direction.
The ion substitution of octahedral lattice sites mainly involves the replacement of Al3+ by Ga3+, Sc3+, and In3+. With an escalation in the concentration of doped ions like Ga3+, Sc3+, and In3+, the peak wavelength of the Ce3+ emission spectrum has a blue shift. In addition, the incorporation of Sc3+ effectively enhances the thermal quenching resistance of Ce3+, while the inclusion of Ga3+ diminishes the thermal quenching resistance of Ce3+.
The main substitutions of dodecahedral-octahedral lattice ion pairs include Ca2+-Hf4+ and Ca2+-Zr4+ replacing Y3+-Al3+. The emission and excitation peak wavelengths of Ce3+ gradually blueshifts as Ca2+-Hf4+ and Ca2+-Zr4+ doping contents increase.
The substitution of dodecahedral-tetrahedral lattice ions is mainly achieved by M2+-Si4+ (M=Mg, Ca, Sr, Ba) replacing Y3+-Al3+, with alkaline earth metals occupying the dodecahedral lattice and Si4+ occupying the tetrahedral lattice. In the garnet system, when M2+-Si4+ replaces Y3+-Al3+, the emission wavelength of Ce3+ undergoes a blue shift with the increase of M2+ ion radius, resulting in improving the thermal stability.
The substitution of octahedral-tetrahedral lattice ions mainly involves Mg2+-Si4+/Ge4+ replacing Al3+-Al3+, where Mg2+ occupies the octahedral lattice and Si4+/Ge4+ occupies the tetrahedral lattice. Among them, Mg2+-Si4+ replacing Al3+-Al3+ is an effective method to achieve a large redshift of Ce3+ emission wavelength. The introduction of Mg2+-Ge4+ also leads to the redshift of Ce3+ emission wavelength, but the extent of this redshift is considerably less than that achieved by Mg2+-Si4+.
The chemical components in dodecahedral-octahedral-tetrahedral lattice co-substitutions are more intricate, with Ca2+ and Mg2+ occupying the dodecahedral lattice, Mg2+, Sc3+, and Hf4+ occupying the octahedral lattice, and Si4+ and Ge4+ in the tetrahedral lattice. Different lattice ions on the co-substitution affect the luminescence performance of Ce3+.
The effect of ion substitution on the luminescence performance of Ce3+ is analyzed via utilizing Ce3+-doped yttrium aluminum garnet fluorescent material as a prototype. The comparative study reveals that the most effective redshift of Ce3+ emission wavelength appears when Mg2+-Si4+ occupies the octahedral-tetrahedral lattice configuration. This results in a possibility of red shifting the emission wavelength of Ce3+ at 610 nm, thereby significantly enhancing the color rendering capabilities of white LED/LD lighting systems.
Conversely, an effective blue shift in Ce3+ emission wavelength appears in Ca2+-Zr4+ located in the dodecahedral-octahedral lattice, with a potential shifting at 460 nm. Furthermore, the inclusion of Sc3+ in the octahedral lattice and Ba2+-Si4+ in the dodecahedral-tetrahedral lattice markedly improves the thermal quenching resistance of Ce3+. Hence, this combination exhibits substantial advantages for high-power LED and LD lighting applications. In contrast, the introduction of Ca2+-Mg2+-Si4+/Ge4+ into the dodecahedral-octahedral-tetrahedral lattice configuration leads to a poor thermal quenching resistance for Ce3+, indicating a unsuitability for white light LED/LD illumination.
Furthermore, the d88/d81 ratio is related to the Ce3+ emission wavelength and thermal stability, based on the degree of [CeO8] distortion. It is indicated that at an equivalent Ce3+ doping concentration, an increase in the d88/d81 ratio corresponds to a redshift in emission wavelength and a decrease in thermal stability. Among the research results available, little work on the impact of d88/d81 value on the luminescence performance has been done yet. A future research on the in-depth physical models and subsequent experimental validation for Ce3+-doped garnet-based fluorescent materials is needed.
Solid-state lighting is one of the most promising technologies in the 21st century due to its high luminous efficiency, faster responding, energy-saving, environmentally friendly, and longevity. It relies on solid-state electronic components to achieve the conversion of electrical energy to light energy. At present, solid-state lighting mainly includes light-emitting diodes (LEDs) and laser diodes (LDs). The luminous efficiency of existing LEDs decreases with the auger effect as the input power increases. They cannot achieve a higher light efficiency output. However, LDs have a higher efficiency, a stronger brightness and a longer lighting distance for the efficiency degradation of LEDs at high power densities. The existing color conversion materials that can be used for laser diodes are single crystals, phosphor ceramics, phosphor-in-glasses, phosphor films, etc.. Phosphor ceramics are the most promising color conversion materials for LDs with high thermal conductivity, good optical properties, and controllable microstructures.
This review discussed the current research status of forming methods, sintering processes, component selection, and structural design of phosphor ceramics for laser diodes. This review summarized the design requirements of LDs for phosphor ceramics, such as thermal saturation characteristic, optical saturation characteristic, luminous efficiency, color rendering index, mechanical properties, etc.. This review also elaborated the performance requirements of phosphor ceramics for practical applications. The preparation technologies of phosphor ceramics were summarized. The preparation methods of the powders included chemical coprecipitation method, hydrothermal method, sol gel method, etc.. The forming methods of powder included dry pressing, cold isostatic pressing, molding by slip casting process, casting molding, gel casting, etc.. The sintering methods of ceramics include pressureless sintering, gas pressure sintering, vacuum sintering, spark plasma sintering, hot pressed sintering, hot isostatic pressing, etc..
For selecting and optimizing raw materials, sintering aids are one of the important factors affecting the sintering of phosphor ceramics. In the design of the composition of phosphor ceramics, the luminescence performance is adjusted via designing the types of matrix elements in oxide and nitrogen (oxide) phosphor ceramics. The luminescence behavior of phosphor ceramics is analyzed via introducing different luminescent centers into the same matrix. In addition, the introduction of a second phase is also chosen to improve both the blue light absorption rate and the heat dissipation performance of ceramics in order to further enhance the luminescent performance of phosphor ceramics. In the structural design of phosphor ceramics, some methods such as introducing pores, multi-layer structures, and surface modifications are used to further improve the luminescence efficiency and color rendering index of phosphor ceramics.
Lighting penetrates every aspect of life, i.e., daily lighting, projection displays, automotive lighting, and other industries. The requirements for lighting devices in various industries are increasing and gradually moving towards to high power and high brightness. This review represented recent research progress on phosphor ceramics in molding technology, sintering process, material design, and other aspects. At present, there are still shortcomings in the preparation of phosphor ceramics, such as single preparation method, limited variety, obvious thermal and optical saturation phenomena. Further improvements are needed in the following areas: 1) Preparation of highly active nano-powders and sintering additives are related to optical and mechanical properties of phosphor ceramics. Sintering aids promote liquid-phase mass transfer during ceramic sintering process and also impact the structure of the matrix lattice; 2) The forming method of ceramics directly determines the stacking situation of powder raw materials, which in turn affects the sintering density. The appropriate molding methods can obtain ceramic bodies with uniform composition, constant shape, and strength, making the particles tightly being connected and promoting facilitated transport during the sintering process; 3) The sintering of phosphor ceramics requires a high temperature and a certain sintering environment, such as reduction atmosphere, oxidation atmosphere, vacuum environment, etc.. The sintering conditions that thermal equipment can provide also affect the design and selection of sintering conditions for phosphor ceramics. The selection of thermal equipment has a significant impact on the sintering process of phosphor ceramics, and determines the range of sintering condition. Further promoting the technological progress of thermal equipment plays a decisive role in improving the performance of phosphor ceramics; 4) The emission spectrum of phosphor ceramics still lacks a red spectral component, so further expanding the types of red phosphor ceramics will inevitably effectively improve the color rendering index of phosphor ceramics; 5) The appropriate non-luminescent second phase preparation of multiphase phosphor ceramics is beneficial to improving the luminescence efficiency of phosphor ceramics; and 6) The intense heat dissipation and luminescence performance of luminescent materials are still a key to their widespread application.
Infrared imaging and precision guidance systems are distinguished by their high imaging accuracy, robust concealment, and resilience to interference. These characteristics make them a pivotal area of contemporary and future warfare. The infrared window is an integral part of the infrared guidance system, being responsible for transmitting target signals, preserving aerodynamic configurations, and protecting internal precision optoelectronic components. Consequently, the window material must possess a high optical transmittance across the operational band and exhibit the superior strength and hardness.
Hypersonic vehicles have challenges to infrared window materials, including extreme thermal shock, aerodynamic overload, degradation of optical and mechanical performance at high temperatures, and self-heat radiation that can interfere with target signals. At present, no material fully satisfies the demands of cutting-edge systems, making it imperative to develop a window material that offers a low radiation, a high strength, and a broadband transmittance at elevated temperatures.
Commonly utilized infrared window materials encompass sapphire, spinel, AlON, magnesium fluoride, yttrium oxide, and Y2O3-MgO nanocomposite ceramic materials. Sapphire also as α-alumina monocrystal is characterized by its high strength and broad high transmittance properties. It boasts a well-established industrial chain and is extensively employed in various aircraft models. While polycrystalline alumina transparent ceramics offer lower production costs, compared to sapphire, and they have yet to reach the same level of application. Spinel and AlON both possess cubic structures and demonstrate great transmission rates from near-ultraviolet to mid-infrared spectrums. AlON exhibits superior mechanical properties akin to those of sapphire, making them popular choices for aircraft infrared windows. However, these three materials share a significant drawback, i.e., an excessively high heat emissivity at high temperatures. This can lead to thermal barrier complications due to spontaneous radiation interference with target signals under intense aerodynamic heating. In addition, their shorter infrared absorption cut-off edges also result in pronounced transmission rate reductions at 5 micrometers, following a high-temperature blue shift. Note that sapphire and spinel both present challenges related to their inadequate mechanical performance at high temperatures. Researches on zirconia ceramics as infrared windows are limited, but their high bending strength and decent transmission performance are noteworthy. Y2O3 and MgF2 with the cubic structure exhibit superior transmission in the 3-5 micrometer band due to their low phonon energy and minimal spontaneous radiation coefficient. Their further infrared absorption cutoff edge mitigates an impact of high temperature on the mid-infrared wave transmission. However, their mechanical properties do not withstand the intense heat shock encountered at a hypersonic speed. Y2O3-MgO nanocomposite ceramics, characterized by extremely small grain size from the pinning effect, combine a high transmission in mid-infrared, low radiation and high strength at high temperatures. This makes them an ideal material for infrared windows in hypersonic aircraft.
The development of future hypersonic vehicles necessitates the exploration of new infrared window materials. Among the materials under consideration, Y2O3-MgO nanocomposite ceramics have attracted recent attention due to its superior low radiation, thermal shock resistance, and transmission properties at a high temperature. The existing researches predominantly focus on powder preparation processes and sintering techniques, with relatively less emphasis on material doping modifications. An important research aspect is to further reduce the grain size, while maintaining a high density. Meanwhile, the incorporation of magnesium oxide into Y2O3-MgO nanocomposite ceramics introduces a degree of hygroscopicity. The enhancement of corrosion resistance in materials presents a challenge that requires resolution.
Infrared and radar composite guidance technology, characterized by its robust anti-interference capabilities and superior guidance accuracy, represents a pivotal aspect for future aircraft development. This necessitates that window materials have a low dielectric constant in the radar band. While Y2O3-MgO nanocomposite ceramics exhibit a higher dielectric constant and significant radar attenuation, MgF2 has a commendable transmission performance within the radar band. However, its mechanical properties are suboptimal. Consequently, the pursuit of high-strength, low-dielectric constant window materials is of great importance.
The over-the-horizon working distance in infrared optoelectronic systems, coupled with the need for a large angle reconnaissance range, necessitates infrared windows that have the superior optical uniformity. These windows should be also larger in dimensions and feature the specific window shape designs. Compared to crystals, ceramics are more readily available in large sizes and offer a more cost-effective approach for processing specific shapes. Hot isostatic pressing is an effective method for achieving these requirements, but the gas cost continues to be relatively expensive.
In numerous studies, the primary focus of characterizing the mechanical properties of materials is on the strength and hardness. However, there is a need to integrate properties such as Poisson's ratio, thermal conductivity, and thermal expansion coefficient more comprehensively to augment thermal shock resistance in materials. Furthermore, the existing researches of infrared materials predominantly center on the performance characterization in room-temperature environments. The optical and mechanical properties at high temperatures need to be further investigated.
Gallium oxide crystal phase is widely used, and the metastable phase can be only obtained by means of epitaxy. Selecting suitable growth methods and improving the heteroepitaxy level are still the problems that the academic circles have been discussing. The mist chemical vapour deposition (Mist-CVD) method does not require a vacuum system, which is safe, economical, simple and controllable, demonstrating a potential application for metastable phase growth of gallium oxide. The level of heterogeneous epitaxy of various crystalline phases of gallium oxide still needs to be further improved. For instance, there is still a problem of mixing phases during the growth process, which leads to a difficulty of regulating the crystalline phases. In terms of the nucleation mechanism, there is a lack of process-specific research and explanatory notes. In this paper, the most suitable growth intervals of Ga2O3 crystalline phases on sapphire substrates were explored in a vertical mist chemical vapour deposition epitaxy furnace. The relationships among Ga2O3 crystal phase modulation, crystalline quality, growth rate and growth process parameters, as well as the optimisation of surface morphology by annealing were investigated respectively. The nucleation mechanism of the films and the precursor droplet motion law of Mist-CVD were analyzed, and the experimental results were discussed.
Heterogeneous epitaxial Ga2O3 films were prepared by the Mist-CVD method in a vertical mist chemical vapour deposition epitaxy furnace with a 2-inch commercial sapphire substrate. Gallium acetylacetonate (Ga(acac)3) aqueous solution was used as a precursor for Ga and O at 0.05 mol/L, and 1.5% HCl was used as a co-solvent. High-purity Ar (99.999%) was used as a carrier gas with Ar flow rate of 2 250 mL/min and growth pressure of 101.325 kPa, respectively, and O2 was used as a dilution gas. The growth parameters were adjusted in the growth temperature range from 600 ℃ to 750 ℃ and O2 flow rate from 225 mL/min to 600 mL/min for 1 h.
A model D8-ADVANCE X-ray diffractometer (XRD) was used to determine the crystal structure. The elemental composition and content of the epitaxial layer surfaces were determined using a model ESCALAB-250 X-ray photoelectron spectrometer (XPS). In addition, the cross-sectional image and thickness of the Ga2O3 epitaxial layer were characterized by a model S-4800 scanning electron microscope (SEM). The AFM images and root-mean-square (RMS) surface roughness of Ga2O3 epitaxial layers were analyzed by a model ICON-type atomic force microscope (AFM). A LAMBDA-950 UV-Vis spectrophotometer (UV-Vis) was used to characterize the transmittance of the samples and calculate the forbidden band width.
Based on the XRD analysis on the crystal structure of the epitaxial films of gallium oxide at 600-750 ℃, there exist α and ε mixed phases at 600-700 ℃, and the film diffraction peaks are weak with no obvious selective orientation. This is due to the higher lattice matching of the α phase to the c-plane sapphire substrate, which is more easily induced to grow on the sapphire substrate at low temperatures and stabilised under lattice mismatch strain. The ε-pure phase is grown at 750 ℃ with a selective orientation. The crystalline phase of gallium oxide at higher temperatures is not explored, and pure phase films of β-Ga2O3 are expected to be obtained at higher growth temperatures due to the limitations of the current epitaxial furnace equipment with a maximum set temperature of 750 ℃.
ε-Ga2O3 pure phase is generated at different oxygen flow rates. However, the half-height width of the diffraction peaks of the films appears at a lower level of 0.141° and 0.150° for oxygen flow rates at 225-250 mL/min. When the oxygen flow rate exceeds 400 mL/min, the half-height widths of the samples become larger, i.e., 0.178°, 0.162° and 0.162°, respectively, and the crystalline quality of the films decreases, but the overall crystalline quality of ε-Ga2O3 is better. Based on the analysis on the cross-section of the film thickness by SEM, the growth rate of the film firstly increases and then decreases with the increase of the oxygen flow rate, reaching a growth rate of 3 μm/h at 250 mL/min and 400 mL/min. A higher growth rate can be obtained at 250-400 mL/min.
For the ε-Ga2O3 samples grown at 750 ℃, the surface of the ε-Ga2O3 sample shows a cluster with coarser particles and a cloudy morphological features, and its surface roughness is 10.8 nm. From the 3D stereogram, the surface morphology shows multiple bulge-like or hill-like bumps, and the height of the surface bumps is between 50 nm and 100 nm, and its overall height is larger than the grain size of the film, indicating that the epitaxial film grows in accordance with the three-dimensional island-like growth mode. The β-Ga2O3 sample after annealing at 900 ℃ is similarly characterized by AFM. The surface roughness of the thin film of β-Ga2O3 samples decreases as RMS=5.42 nm, and the grain size becomes larger, ranging from 50 nm to 80 nm. At high temperatures, the height of the surface bumps is between 5 nm and 30 nm, which is smaller than the grain size, showing that the film densities increase at high temperatures.
Pure phase films of ε-Ga2O3 were obtained at 750 ℃ in a three-dimensional island growth pattern with a high surface roughness of 10.8 nm at low temperatures. The growth rate of the film of ε-Ga2O3 at an oxygen flow rate of 225 mL/min was 1 μm/h with a half-height width of 0.141°. The growth rate of the film increased to 3 μm/h with increasing the oxygen flow rate, and the film was still in the pure phase of ε-Ga2O3. However, the crystalline quality of ε-Ga2O3 was not improved, while rather deteriorated due to the high oxygen flow rate. β-Ga2O3 pure-phase thin films were obtained after annealing at 900 ℃, and the surface morphology was further optimized with a reduced roughness of only 5.42 nm. The pure crystalline phases of Ga2O3 with a considerable thickness could be prepared by a low-cost mist chemical vapor deposition method in a Mist-CVD equipment.
In the continuous casting of aluminum-killed steel, alumina (Al2O3) clogging frequently forms on the submerged entry nozzle (SEN) inner wall, causing SEN clogging. SEN clogging has several negative influences, i.e., flow field instability, reduced continuous casting efficiency, deteriorated billet quality, decreased quality of produced steel, and even interruption of continuous casting. The SEN clogging problem in the continuous casting of aluminum-killed steels has attracted much attention in metallurgy and refractory materials. Although many anti-clogging measures are proposed, the SEN clogging problem has not been solved yet. The main reason is that the mechanism of SEN clogging is still unclear. The clogging of SEN is mainly caused by the movement and adhesion of inclusions in molten steel to the SEN wall. It is thus necessary to clarify the mechanism of SEN clogging, especially force condition of inclusions in molten steel. Recent studies indicate that there is a correlation between the movement of oxide inclusions in molten metal and an applied electric field. The movement of inclusions under the action of electric field force is an important factor in SEN clogging. An effective way to solve SEN clogging problem is to analyze the effect of inclusions in refractory materials and molten steel from the perspective of electric field. In this paper, the charge of Al2O3 inclusions in SEN wall and molten steel during continuous casting was investigated to reveal the mechanism of SEN clogging and blockage, and to develop a technology for preventing alumina clogging in SEN. This work can provide a theoretical and technical support for solving the technical problems of SEN clogging in iron and steel industry.
The powerful mixers (Erich Co., Germany) were used for mixing. The blast drying oven was used to control the volatile matter of the material. The samples were prepared by four-column hydraulic press and isostatic press. The samples were heat treated under the condition of carbon embedded (i.e., 850 ℃ for 6 h). The wall charge of SEN in the continuous casting process was measured by a digital source meter. The charging properties of Al2O3 inclusions was determined based on the movement law of Al2O3 inclusions under the action of external electric field. The correctness of the experimental results was verified by applying a reverse electric field on the continuous casting site. The microstructure and morphology of the refractory were determined by a model JSM-700 F scanning electron microscope with a resolution of 3.0 nm, and the micro-area composition was analyzed by a model X-Max50 energy spectrum analyzer.
The results of rotating flow experiment indicate that the SEN material is charged when rubbing with the molten steel. The experiments in the continuous casting site show that the SEN wall is negatively charged during the continuous casting process. There are three main reasons: 1) since the work function of Fe is 4.5 eV less than that of C is 5.0 eV, when the molten steel contacts with graphite in SEN, the electrons will migrate from the molten steel to SEN, making SEN negatively charged; 2) because the Fermi level of Fe (11.1 eV) is more than that of Al2O3 (8.7 eV), the electrons will migrate from the molten steel to SEN when the molten steel contacts with the corundum Al2O3 in SEN, making SEN negatively charged; 3) When the two conductors with different temperatures are in contact, the electrons will migrate from the conductor with a higher temperature to the conductor with a lower temperature. In the continuous casting process, the temperature of the SEN is less than that of molten steel, and the electrons will migrate from the molten steel to the SEN, eventually leading to the negative charge on the SEN wall.
Al2O3 inclusions in molten steel move and adhere to the negative electrode under the action of electric field. This indicates that Al2O3 inclusions in molten steel are positively charged. The main reason is that in the continuous casting process, the molten steel is under high temperature and low oxygen conditions, and the oxygen vacancy in the defects of Al2O3 formed by the reaction of [Al] and [O] in the molten steel has the lowest energy.
The effect of applied electric field on the SEN nodulation was carried out in the continuous casting site. The results show that the degree of nodulation in the inner cavity of SEN connected to the negative electrode of the power supply is higher than that of the reference SEN without electric field, while there is a slight nodulation in the inner wall of SEN connected to the positive electrode of the power supply. This further indicates that the SEN wall is negatively charged in the continuous casting process, and the Al2O3 inclusions in the molten steel are positively charged. SEN clogging can be effectively prevented via applying an external reverse electric field.
The clogging mechanism of SEN was analyzed based on the perspective of electrochemistry. In high-temperature simulation tests, actual working condition test and field verification, the charging characteristics of SEN wall surface, the charging behavior of Al2O3 inclusions in molten steel and their motion behavior under electric field were explored. The charging mechanism of alumina inclusions in molten steel was explained by double electric layer and friction charging theory, point defect theory in ion crystal and first-principle.
The SEN was negatively charged in continuous casting, and the charge increased with the increase of casting speed. The Al2O3 inclusions in molten steel were positively charged, and the electrostatic force was an important driving force for the migration of Al2O3 inclusions to the SEN wall. The high-temperature simulation test and the actual working condition test both showed that the Al2O3 inclusions could move to the cathode and adhered to the Al2O3-C material, and the thickness of the attachment increased with the increase of the electric field strength.
Electrochemical energy storage (EES) is an essential technology in modern lifestyle. As two typical EES devices, batteries and supercapacitors have their own advantages and disadvantages. Pseudocapacitive materials have attracted recent attention. Such materials store charges via battery-like redox reactions, but have supercapacitor-like electrochemical behaviors. Therefore, pseudocapacitive materials have a considerable potential to simultaneously achieve both high energy and high power density as well as excellent stability, merging a unbridgeable gap between batteries and supercapacitors. However, the development of pseudocapacitive materials still encounter some serious challenges such as unclear energy storage mechanism, lack of alternative pseudocapacitive materials and vague future development directions.
This review represented recent development on pseudocapacitive materials and briefly discussed their energy storage mechanism and the imperfections of the existing issues. Furthermore, we proposed a concept of bulk pseudocapacitance and realized a goal for the future development of pseudocapacitive materials. In addition, we also discussed some key factors and strategies for achieving such a bulk pseudocapacitance.
The energy storage mechanisms of pseudocapacitive materials were discussed. The first pseudocapacitive material, i.e., RuO2 thin film, was reported by Trasatti et al. in 1971. The thin film electrode exhibited a supercapacitor-like cyclic voltammetry curve but differed from the electric double layer in faradic origin. Although the electrochemical performance of RuO2 electrodes were enhanced via fabricating various nanostructures and introducing structural water, the energy storage mechanism of this electrode was not fully understood, and limited to reversible redox reaction at the surface, the content of structural water in crystal, fast proton transport and crystallinity of electrode, etc.. MnO2 is another typical pseudocapacitive electrode, which was firstly reported by Lee and Goodenough in 1999. Simon and Gogotsi reported the pseudocapacitive response of this electrode to successive multiple surface redox reactions. Recently, Augustyn et al. indicated the pseudocapacitive response to the existence of nanoconfined interlayer structural water, mediating an interaction between charge carrier and electrode. Dunn et al. investigated the pseudocapacitive response for T-Nb2O5 electrode and proposed a model of pseudocapacitance, i.e., intercalation pseudocapacitance. Mxenes is one of pseudocapacitive materials with a unique structure that is responsible for its pseudocapacitive behaviors. Although it is still controversial whether it is a pseudocapacitive electrode, Co(OH)2 demonstrates a coupled performance of batteries and supercapacitors. The energy storage mechanism of this electrode was investigated by in-situ X-ray adsorption spectroscopy. It was found that the high specific capacitance originates from a battery-mimic bulk reaction, while the high stability performance roots in the crystal structure stability in charge-discharge process. Furthermore, we highlighted that the Co(OH)2 electrode blurs the distinction between supercapacitors and batteries, which is in accordance with the continuous transition from electric double layer to battery proposed by Fleischmann and co-workers. In future, more intensive studies should be conducted on the energy storage mechanism of pseudocapacitive materials, especially on the unique characteristics of charge carrier and electron transportation, charge transfer, interaction between charge carrier and electrode in an atom-level.
The energy density of pseudocapacitive materials is still far below than the actual demand, even the batteries. To address this issue, a concept of bulk pseudocapacitance is proposed. In fact, intercalation pseudocapacitance depicted by Dunn et al. is a typical example of bulk pseudocapacitance. Bulk pseudocapacitance refers to the pseudocapacitive response that happens throughout the bulk of the electrode material rather than the surface. Meanwhile, the proposal of bulk pseudocapacitance can provoke a research on boosting the pseudocapacitive response of battery materials to alleviate the lack of the alternative pseudocapacitive materials.
Reducing the size of active materials to nano-scale, i.e., nanostructured material, as one of the strategies, can be used to achieve the bulk pseudocapacitance. For instance, LiCoO2 nanocrystalline with the sizes of ˂11 nm exhibits a pseudocapacitive response. In addition to nanostructured materials, a strategy named diffusionless-like conversion reaction to achieve pseudocapacitive response in conversion reaction was proposed. Based on the conversion reaction between Fe(OH)2 and δ-FeOOH, a battery-like conversion reaction achieves a high specific capacitance, and a diffusionless-like transformation between charge and discharge phases without a massive atom movement presents high rate and stability performance.
For battery materials, their pseudocapacitive response can be enhanced via manipulating the charge carrier transport, electron transfer, and designing the interaction between charge carrier and electrode in atom-scale. In addition, such a provoking pseudocapacitive response in battery materials extends the scope of bulk pseudocapacitive materials. Li and co-workers enhanced the Li+ transport by pre-intercalation of NH4+ into interplay of Mo2CTx. The mechanism of FeHCF storing NH4+ is clarified, indicating that the weak Fe—N interaction mitigates the volumetric expansion induced by NH4+ insertion. These findings demonstrate that modulating on charge carrier transport and interaction between charge carrier and electrode can improve the pseudocapacitive response of battery materials.
Future development of pseudocapacitance relies on a deep understanding of the energy storage mechanism of pseudocapacitive materials in an atomic level, i.e., the charge carrier and electron transport, charge transfer, and the interaction between charge carrier and electrode. In addition, exploiting and designing novel pseudocapacitive materials as well as boosting pseudocapacitive response of existing battery materials are crucial for the application of pseudocapacitive materials.
Lithium-ion batteries (LIBs) dominate the field of energy storage due to their high specific energy density and long cycle life. However, the scarcity of lithium resources, potential safety issues, and high cost severely restrict their further large-scale energy storage applications. It is thus urgent to investigate other battery systems beyond LIBs. Alkali metal ions (Na+ and K+) with higher abundance and multivalent charge carriers (i.e., Zn2+, Mg2+, Al3+, etc.) have attracted much attention. Although sodium-ion batteries (SIBs) and potassium-ion batteries (KIBs) have the similar chemical properties to Li, they have lower energy density (i.e., 100-120 W·h/kg, 150-170 W/kg), toxic and flammable electrolytes, high operating costs, and safety hazards. Magnesium-ion batteries (MIBs) and aluminum-ion batteries (AIBs) involve multi-electron redox reactions. Although they can theoretically achieve greater specific capacity and energy density, the positive electrode materials available are just a few compounds, affecting their overall development. In addition, the passivation of the Mg anode greatly prevents a further transport of Mg2+. AIBs are in the primary development stage because of the formation of Al2O3 layers on the anode, leading to the corrosion of aluminum electrodes, decreased battery efficiency and low cycling stability.
Among all available energy storage systems, aqueous zinc-ion batteries (AZIBs) are considered as a most promising large-scale energy storage due to their lower cost, higher cycling stability, aqueous electrolyte, and safe battery manufacturing process. AZIBs can directly use metallic zinc as a negative electrode material, and they also have unique advantages, such as high theoretical capacity (i.e., 820 mA·h/g and 5 855 mA·h/cm2), low redox potential (i.e., -0.76 V vs. SHE), abundant crustal reserves (i.e., 300 times greater than that of lithium), and good stability in the presence of oxygen and humid atmosphere. Multivalent AZIBs allow multiple electron transfers during the electrochemical reaction, providing an opportunity for achieving high energy and power density. In addition, compared to flammable organic electrolytes, the aqueous electrolytes typically used in AZIBs have lower cost, safer characteristics, and higher ionic conductivity.
AZIBs have been developed since the invention of the Voltaic Pile (Zn-Ag) by Alessandro Volta. In 1870-1969, a large-scale production led to the invention of zinc-carbon batteries (i.e., Zn|NH4Cl|MnO2) and alkaline zinc-manganese batteries (i.e., Zn|KOH|MnO2), which are still used. In 1986, Yamamoto used weak acidic electrolytes instead of alkaline electrolytes to improve the reversibility of zinc-manganese batteries. In late 2011, Kang proposed a concept of "zinc-ion batteries" and confirmed the reversible insertion/extraction reaction of zinc ions in manganese dioxide in a zinc sulfate electrolyte system. Since then, various rechargeable battery systems based on near-neutral aqueous electrolytes (i.e., zinc-manganese, zinc-vanadium, zinc-cobalt, and zinc-iodine) have been developed. The existing work on AZIBs deals with aqueous solutions containing ZnSO4, ZnCl2, or Zn(CF3SO3)2 as an electrolyte with a high safety and a reversibility.
There are numerous reports on the extensive research on AZIBs, i.e., zinc metal anode, cathode materials, electrolyte engineering, and potential applications. However, there exist still some challenges in the development of these batteries. For instance, the cathode materials suffer from the issues like structural instability, poor conductivity, and dissolution. The zinc anode has inevitable dendrite formation, hydrogen evolution reactions, surface corrosion, and passivation. The aqueous electrolyte has a low voltage window and corresponding parasitic reactions. In addition, most studies are also conducted under mild laboratory conditions without considering the entire battery system, including inactive components.
Rechargeable aqueous zinc-ion batteries based on neutral or weakly acidic electrolyte systems have been developed. However, there are still some challenges in the current battery systems such as low energy density and short cycle life. This review focused on the fundamental scientific issues associated with some aspects of AZIBs, and provided a comprehensive summary of the latest advancements in cathode materials, anode materials, electrolyte materials, and inactive component materials (such as separators, current collectors, and binders). The core issues and research strategies associated with each component were discussed., Some perspectives on the fundamental issues for high-performance water-based zinc-ion batteries were proposed based on the battery structure and electrochemical operating mechanisms.
The existing work on AZIBs are mostly carried out in the laboratory, mainly single aspects of evaluation and lacking comprehensive assessments. From small button cells to large-scale pouch cells and prismatic cells, some issues and defects could be magnified, and the impact of side reactions on the electrochemical performance became more apparent. The future research and application of aqueous zinc-ion batteries could require a further exploration of their fundamental issues and multivariate optimization of battery performance.