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  • Jianyu DU, Hai ZHONG, Chen GE
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2506-2517.

    With the rapid development of big data, autonomous driving, and artificial intelligence technologies, competition among countries in the AI field has become increasingly fierce. Advanced AI models represented by OpenAI and DeepSeek rely on massive amounts of unstructured data (such as speech and images) for training. however, conventional computing architectures encounter limitations such as the "memory wall" and "power wall" during large-scale data computation. Therefore, breaking through the limitations of traditional architectures and exploring high-performance computing paradigms has become an urgent necessity. The efficient information processing mechanism of the human brain provides inspiration for this effort. Inspired by this, neuromorphic computing has emerged. Its core concept is based on an in-memory computing architecture, integrating data storage and computational functions within the same computational unit to reduce energy loss caused by data migration and enhance computational parallelism. It exhibits broad application potential in areas such as artificial intelligence and large-scale data analysis. Nevertheless, breakthroughs in materials and devices remain crucial for realizing high-performance neuromorphic computing systems.

    Hafnia-based materials have emerged as highly promising candidates for neuromorphic computing devices due to their exceptional compatibility with complementary metal oxide semiconductor (CMOS) technology, high dielectric constants, and stable ferroelectric properties at ultrathin scales. In fact, as early as 2007, non-ferroelectric HfO2 was widely applied in CMOS as a high-dielectric-constant (K) gate insulator. Therefore, the discovery of ferroelectricity in hafnia-based materials is critical for advancing CMOS compatibility with ferroelectric materials. This has also altered the conventional understanding of fluorite crystal-structured materials and opened up possibilities for realizing ferroelectricity at ultrathin scales. Subsequently, the crystal structures and origins of ferroelectricity in hafnia-based oxides were systematically studied through theoretical calculations and experimental approaches. The crystal structures of hafnia-based materials are primarily classified into two categories: polar and nonpolar. Current research indicates that their ferroelectricity primarily arises from the non-centrosymmetric orthorhombic ferroelectric phase. Furthermore, recent studies have also reported polar rhombohedral phases (R3m and R3). In fact, our recent studies have demonstrated rich phase-transition pathways between polar orthorhombic phases and nonpolar monoclinic and tetragonal phases, highlighting the structural complexity of this material. In this article, we systematically introduce various structural phase-transition techniques for hafnia-based materials, such as temperature control, doping, oxygen vacancy engineering, and stress and interface engineering methods. It should be noted that a single factor (e.g., doping alone or solely oxygen vacancy modulation) might not significantly alter the phase composition of HfO2 films; however, when doping, oxygen defect modulation, mechanical stress, and interface engineering act together, they can significantly modify the free-energy landscape, kinetically "freezing" originally non-ferroelectric equilibrium phases into metastable ferroelectric phases. Device fabrication is also crucial for realizing high-performance neuromorphic computing. Device structures such as ferroelectric RAM (FeRAMs), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunneling junctions (FTJs) have demonstrated remarkable potential in neuromorphic computing applications. FeRAM devices utilize reversible polarization switching to achieve binary and multilevel memory operations, demonstrating significant potential in terms of operation speed, low power consumption, and integration density. FeFET devices, benefiting from their ultrathin ferroelectric gate layers, exhibit advantages including low power consumption, rapid switching speeds, and miniaturization capability. Similarly, FTJ devices, characterized by ultra-thin ferroelectric barriers, enable tunable tunneling resistances and non-destructive readout. These properties provide substantial benefits for neuromorphic computing applications, facilitating multilevel data storage and high-density device integration.

    Summary and prospects

    Although significant achievements have been made in hafnia-based ferroelectric materials and their device applications, several fundamental and practical challenges persist.

    The preparation of thin-film devices based on HfO2 faces significant challenges related to electric field cycling stability. Early cycling phases experience the wake-up effect, attributed to field-induced phase changes, charge detrapping and redistribution, domain wall depinning, and reduction of depolarization fields from breakdown in nonpolar layers near electrodes. Later cycling stages suffer fatigue, indicated by a reduction in remanent polarization (Pr), often ending in device breakdown.

    Specifically, FeFET devices encounter reliability challenges related to their metal-ferroelectric-insulator-semiconductor (MFIS) gate stack; the interfacial layer (IL), due to high permittivity and coercive fields, undergoes increased stress during polarization switching, causing premature fatigue and short retention times driven by depolarization fields. Optimizing the IL is thus crucial for improving FeFET reliability. FeRAM, despite demonstrating promising retention stability, still faces limitations in commercialization due to polarization fatigue, imprint effects, wake-up phenomena, and substantial device-to-device variability, necessitating further optimization of electrode design, composition, interface treatments, and crystallization anneals. Meanwhile, FTJs rely on ferroelectric polarization-modulated tunneling current, with main challenges including low tunnel current due to relatively thick tunneling barriers, as well as endurance issues. Although FTJ technology holds significant potential for 3D stacking and in-memory computing, it remains at an early development stage, requiring further research to assess future applicability.

    The discovery of ferroelectricity in hafnia oxide has opened numerous promising pathways in nanoelectronics, enabling significant advancements in non-volatile memories, sensors, actuators, and neuromorphic computing. Future research efforts should focus on overcoming current challenges such as material fatigue and reliability issues inherent in FeFET, FeRAM, and FTJ devices. Continuous advances in material science, device engineering, and integration technology will thus play a pivotal role in establishing hafnia-based ferroelectric materials as cornerstone components of next-generation computing platforms.

  • Shuo YAN, Chonggao BAO, Shijia LI, Wencai DONG, Haohong QIU
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2696-2705.
    Introduction

    3% yttria-stabilized tetragonal phase zirconia ceramics (3Y-TZP) show a significant potential in aerospace application due to their low thermal conductivity, excellent high-temperature stability, and mechanical strength. However, it is difficult for conventional forming methods of porous ceramics to meet the requirements for complex structural designs. Digital Light Processing (DLP) is an important additive manufacturing method to fabricate components with complex geometries and high-precision, which can balance micron-scale resolution and efficient production. The macro-microporous structure of multiscale porous ceramics can take full advantage of multilevel porosity advantages, balancing thermal insulation and mechanical properties. Therefore, in this paper, DLP technology was combined with the pore-forming agent method to achieve the controllable molding of zirconia ceramics with multilevel pores. The printability of high solid-loading porous ceramic slurry was optimized, and the effect of sintering temperature on the microstructural evolution and mechanical properties of ceramics was investigated.

    Methods

    The ceramic slurry was prepared through batched addition of ball-milled and dried 3Y-TZP powder into a photosensitive resin premix, followed by thorough homogenizationin a model DSG2300Z homogenizer at 1200 r/min. 3Y-TZP slurries with 40% solid loading were prepared with different dispersants. Their rheological behavior was analyzed by a model MCR302 rheometer to identify the optimal dispersant type and content. Subsequently, the slurries with different solid loadings were prepared, and the appropriate solid loading was selected. Based on the optimized parameters, liquid organic pore-forming agent (i.e., polyethylene glycol (PEG) 400) was added at different volume fractions of 5%, 10%, and 15% to replace of the equivalent resin volume fractions. The optimal slurry composition was determined by rheological property.

    The green body was prepared using a DLP printer with 405 nm UV light to cure the resin. The argon debinding and air decarbonization-sintering combined processes were then determined by thermogravimetry-differential scanning calorimetry (TG-DSC) on the green body. The ceramic components were subsequently held at different sintering temperatures (i.e., 1400, 1450, 1500 ℃) for 2 h, respectively. The microstructures of 3Y-TZP powder, green body, and sintered ceramics were determined by field-emission scanning electron microscopy (MAIA3 LMH, Tescan Co., Czech Republic). The chemical composition of the ceramic powders and dispersant was characterized using Fourier infrared spectrometry (IRPrestige-21, Shimadzu Co., Japan). The phase composition was analyzed by X-ray diffraction (d8 advance, Bruker Co., Germany). Three-point bending tests were conducted on ceramic specimens (50 mm×5 mm×4 mm) to evaluate the mechanical strength. The span was 20 mm and the load loading rate was 0.5 mm·min-1. The microstructural porosity was measured by Archimedes water displacement method.

    Results and discussion

    In this study, the slurry formulation for porous zirconia ceramics is optimized. Compared with dispersants KH560 and Solsperse41000, a dispersant KOS110 effectively reduces slurry viscosity. The infrared spectroscopy analysis reveals that KOS110 undergoes esterification reactions with zirconia particles through hydroxyl groups(-OH), thereby enhancing the dispersion of ceramic particles. The slurry viscosity initially decreases and then increases as the content of KOS110 increases, and reaches the lowest value at 3% addition. The yield stress and K value of the slurry are lowest when 3% KOS110 is added, proving that the rheological behavior of the slurry is optimal at this time. Increasing solid loading reduces interparticle distances in the dispersed slurry. When solid content exceeds 50%, the viscosity increases dramatically. Therefore, 50% solid loading can ensure a printability and a high solid content.

    The introduction of PEG into 3Y-TZP slurry can form lubricating layers between ceramic particles through free molecular movement, improving the dispersion of the slurry. The optimal rheological performance is achieved at 10% PEG addition. The optimized high-solid 3Y-TZP slurry demonstrates a superior formability, which can be used to print 3Y-TZP hierarchical porous ceramic green body. When the sintering temperature increases from 1400 ℃ to 1500 ℃, the ceramic particles gradually transition from loose to tightly packed arrangement, accompanied by porosity reduction. After sintering at 1500 ℃, the ceramic samples have both appropriate porosity and strength. The flexural strength reaches 717 MPa and the porosity is 4.03%. The XRD patterns show that the ceramic crystal phase is a stable tetragonal phase after sintering at this temperature.

    Conclusions

    3Y-TZP ceramics with a multidimensional pore structure were prepared by DLP technology combined with the pore-forming agent method. The effects of dispersant type and content on the rheological behavior of ceramic slurries with 40% solid content were investigated. The results indicated that 3% mass fraction of KOS110 could effectively improve the rheology of the slurry due to the chemical bonding and steric hindrance. The solid content and PEG content were synergistically optimized. The results showed that an effective lubrication layer could be formed between ceramic particles when 10% PEG was added to replace the photosensitive resin at 50% solid content. The viscosity of the slurry at this time met the requirements for DLP printing. After DLP printing and high temperature sintering at 1500 ℃, the 3Y-TZP ceramic was structurally stable and had both high appropriate porosity and mechanical strength.

  • Shichang CHENG, Hengyi LI, Changan WANG, Yanhao DONG
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2728-2738.

    Nanocrystalline materials with superior performance have attracted much attention due to their average grain size. In recent years, the sintering technology for ceramic materials has developed rapidly, including techniques such as hot isostatic pressing (HIP), spark plasma sintering (SPS), flash sintering, cold sintering, oscillation pressure sintering (OPS), and ultra-fast ultra-high temperature sintering. These techniques can significantly promote densification process, optimize microstructure, and effectively enhance mechanical and functional properties of ceramics. Among these, two-step sintering has gained widespread attention due to its simplicity, low equipment requirements, and effectiveness in suppressing rapid grain growth during the final sintering stage. These unique advantages make two-step sintering method suitable to prepare ultrafine nanocrystalline ceramics of various materials and flexible to combine with other sintering techniques (such as two-step flash sintering and two-step oscillation pressure sintering). In two-step sintering procedure, the first step uses a high temperature T1 without holding or for a short holding time to force the pores in green body to shrink relative to the size of grain and thus become thermodynamically unstable. In the following second step, a lower temperature T2 and a longer holding time t2 (typically 10-20 hours) are used to complete the densification, while effectively suppressing grain growth. Compared to the conventional sintering method, the two-step sintering method becomes a challenge mainly because the densification and grain growth processes share the similar thermodynamic driving forces and kinetic processes.

    After over twenty years of development, two-step sintering has been extended to a variety of materials like Y2O3, cubic/tetragonal yttria-stabilized zirconia (YSZ), Al2O3, TiO2, ZnO, BaTiO3, SiC, AlN, hydroxyapatite, W, Mo, etc.. These successful applications in different materials indicate that its mechanism could be more likely to relate to the microstructures rather than the chemical composition.

    The mechanism of two-step sintering is presumed to be that the junction mobility of 3-grain line or 4-grain junction with a higher apparent activation energy, compared to 2-grain boundary mobility and grain boundary diffusivity. This enables a grain growth to be pinned at lower temperatures and allows an active grain boundary diffusion to achieve densification during sintering. According to this mechanism, grain growth (i.e., the evolution of the 3-dimensional grain boundary network) is controlled by the lower activation energy of the grain boundary mobility at high temperatures and by the higher activation energy of the junction mobility at low temperatures. Consequently, an apparent mobility transition occurs at a certain temperature, which is observed in 8YSZ. The grain boundary mobility calculated according to the parabolic law of grain growth follows the Arrhenius relationship in the high temperature range with an apparent activation energy (Ea) of 4.2 eV. However, it rapidly decreases at < 1300℃, exhibiting an extremely high apparent activation energy of 10.8 eV. This also directly confirms the mechanism of two-step sintering.

    Material performance failures typically occur at the weakest areas, which are often related to the microstructural or chemical inhomogeneity. The reliability of nanocrystalline material can be improved to some extent via narrowing the grain size distribution in microstructure. Two-step sintering can freeze the grain boundary network in the final sintering stage, introducing grain growth with a higher exponent. Two-step sintering can fabricate nanocrystalline ceramics with a narrower grain size distribution than Hillert's theoretical prediction via uniformizing microstructural network during the initial and intermediate sintering stages at T1 and freezing the microstructural network at T2.

    Summary and prospects

    Two-step sintering offers unique advantages for fabricating ultrafine nanocrystalline ceramics due to its simplicity, low equipment requirements, and effective suppression of rapid grain growth during the final sintering stage. This review represents the research background of two-step sintering, thus clarifying its suitability towards various materials. The related mechanisms behind the suppression of rapid grain growth and the uniformity of the grain size distribution are descirbed. The grain boundary mobility transition at a low temperature is the most important mechanism of two-step sintering. In addition, the uniformization of the microstructural network during the initial and intermediate sintering stages at T1 and the freezing of the microstructural network at T2 are important reasons for the uniformity of two-step sintered samples. The two-step sintering needs a further research on its mechanisms, guidance on the selection of sintering parameters, development of more suitable molding techniques, combination with other sintering techniques and investigation on the macroscopic mechanical properties of large-sized samples.

  • Xinzhe DU, Yuanzhenzi LU, Jiachen LI, Yaoxin LI, Shengchun SHEN, Yuewei YIN, Xiaoguang LI
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2518-2536.

    The ever-increasing demands for high-performance computing and data storage have made the development of high-density, high-speed, and highly reliable memory technologies a critical challenge in contemporary industrial progresses. The innovative research and development of memory materials have become particularly crucial. HfO2-based thin films, as a key dielectric material, have not only been successfully applied in high-dielectric capacitors for conventional dynamic random-access memory (DRAM), but the discovery of their ferroelectric properties has also provided an ideal material choice for ferroelectric capacitors in emerging ferroelectric random-access memory (FeRAM). Particularly, they can be used to construct new electronic devices of ferroelectric field effect transistor (FeFET, utilizing a ferroelectric thin film as the gate dielectric) and ferroelectric tunnel junction (FTJ, using an ultrathin ferroelectric film as the tunneling barrier) for memristors as artificial synapses for neuromorphic computing.

    This review systematically elucidates the fundamental phase structures of HfO2 materials in both bulk and thin-film forms, with a focused analysis on dielectric and ferroelectric performance manipulation strategies for HfO2-based thin films. In terms of dielectric characteristics, we highlight effective methods for achieving high-dielectric-constant (high-κ) morphotropic phase boundary (MPB) structures through phase regulation, along with an in-depth exploration of technical approaches to effectively reduce leakage current density. Regarding ferroelectric properties, this review summarizes optimization strategies for enhancing ferroelectric polarization, improving endurance characteristics, and reducing coercive field. Finally, we provide a systematic overview of the specific applications of HfO2-based dielectric and ferroelectric thin films in relevant information devices, including DRAM, FeRAM, FeFET and FTJ.

    Summary and prospects

    HfO2-based materials have been successfully commercialized applications for DRAM capacitors and field-effect transistor gate dielectrics due to their excellent CMOS compatibility, superior thermochemical stability, wide bandgap, and high dielectric constant. The recent discovery of their ferroelectric properties has further expanded the application prospects of HfO2-based thin films in information storage technologies.

    1) Dielectric properties: HfO2-based thin films with MPB structures located at the phase boundary between orthorhombic (o) and tetragonal (t) phases, exhibit high dielectric constants under relatively low electric fields. Precise control of phase composition is crucial for realizing MPB structures, with approaches including: superlattice design, elemental doping, oxygen vacancy and carbon defect engineering, annealing process optimization, grain size control, and electrode material selection, and so on.

    2) Ferroelectric properties: HfO2-based thin films demonstrate good ferroelectricity especially at a thickness below 10 nm. However, relatively poor endurance and high coercive field remain major bottlenecks for practical applications. Researchers have developed various improvement strategies. Introducing oxide interlayer, optimizing domain switching ratio, elemental doping, and adopting oxide electrode can significantly enhance endurance; While superlattice design, elemental doping, and new ferroelectric phase engineering can effectively reduce coercive fields.

    3) Devices: HfO2-based high-κ dielectrics have been utilized in commercial DRAM capacitors. However, with continuously shrinking feature size, further increasing dielectric constant while maintaining low leakage current require deeper investigation. Successful 3D trench deposition of HfO2-based ferroelectric thin films has enabled high-density integration of FeRAMs with advantages including large polarization, fast switching, and good endurance. Novel device architectures like FeFETs and FTJs demonstrate great potential in neuromorphic computing through nonvolatile multi-state manipulation. However, challenges remain in FeFET retention characteristics and FTJ endurance. Future efforts should focus on improving thin-film quality and scaling up from single-cell to array-level applications, thereby fully realizing the potential of HfO2-based FeFETs and FTJs.

  • Shuai ZHANG, Chengguang LOU, Wenjin LI, Xinghua SU
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2651-2663.
    Introduction

    High-entropy oxides (HEOs) have attracted much attention in the field of electrochemistry due to their distinctive structural characteristics and unique properties. The multiple-principal elements in HEOs offer the multiple redox pairs and multiple possible active sites, which can enhance the energy storage capacity and the electrocatalytic performance. Although the notable progress is achieved in the development of HEOs electrodes, their electrochemical properties should be further improved to meet the requirements of high-performance supercapacitors and OER electrocatalysts. The abundant active sites for the Faradic redox reactions and short pathways for charge transportation could be constructed through the design of novel HEOs with advanced microstructures, thus improving the electrochemical properties. As advanced microstructures, a hollow structure has a great promise for energy storage and conversion because it can provide more accessible storage sites, more catalytic centers and a larger electrode/electrolyte contact area. It is thus expected that the construction of hollow structure is an alternative route to significantly promote the electrochemical properties of HEOs electrode materials. However, it is difficult to prepare the HEOs with a hollow structure due to the complexity of the high-entropy system.

    In this work, a hollow spherical high-entropy perovskite oxide of La(Cr0.2Mn0.2Fe0.2Ni0.2Cu0.2)O3(HS-HEPs) was prepared by microwave solvothermal process and subsequent calcination treatment. The as-prepared HS-HEPs exhibited the excellent electrochemical performance when used as an electrode material for supercapacitors and OER electrocatalysts due to the advantages resulted from the combination of high-entropy perovskite and special hollow structure.

    Methods

    HS-HEPs were prepared by microwave solvothermal process and subsequent calcination treatment. Typically, 0.134 mmol Cr(NO3)3·6H2O, 0.134 mmol Mn(NO3)2·4H2O, 0.134 mmol Fe(NO3)3·9H2O, 0.134 mmol Ni(NO3)2·6H2O, 0.134 mmol Cu(NO3)2·3H2O, and 0.5 mmol La(NO3)3·6H2O were dissolved in 30 mL ethanol under stirring for 1 h to obtain the homogeneous solution. Afterwards, 60 mg of carbon spheres were added in the solution under ultrasonic treatment for 30 min. The resulting mixture was transferred to a 50 mL microwave digestion vessel. The vessel was heated in a microwave oven at a power of 210 W for 10 min. Subsequently, the obtained mixture was centrifuged, washed with deionized water, and dried in a vacuum drying oven at 70 ℃ for 12 h. Finally, the obtained precursor powder was calcinated in a tube furnace with a heating rate of 3 ℃/min at 650 ℃ for 2 h to acquire HS-HEPs.

    The crystalline structure of the sample was determined by X-ray diffraction (XRD, D8 Davinci, Bruker Co., Germany). The morphology and microstructure of sample were characterized by field-emission scanning electron microscopy (FESEM, S-4800, Hitachi Co. Ltd., Japan) equipped with energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM, 2100F, JEOL Co., Japan). The X-ray photoelectron spectra were obtained by a X-ray photoelectron spectrometry (XPS, ESCALab 250, Thermo VG Co., USA). The supercapacitor and OER performance of the sample were measured on a CHI 660E electrochemical workstation (Shanghai Chenhua Instrument Co., China).

    Results and discussion

    The as-prepared samples display a cubic perovskite crystalline structure and a hollow sphere morphology. According to the XPS analysis, the variable oxidation states of Cr, Fe and Mn present in the HS-HEPs, which benefits the Faradaic redox reactions and increases the capacitance. In addition, the existence of high concentration of oxygen vacancies in HS-HEPs is beneficial to enhancing the capacitance and OER activity. Based on the GCD curve, the specific capacitance of HS-HEPs is estimated to be 406 F/g at 1 A/g. After GCD cycles of 5000 at a current density of 5 A/g, 65% capacitance is retained, implying a good long-term electrochemical stability. An asymmetric supercapacitor device (HS-HEPs//AC) with a two electrode configuration is assembled. A maximum energy density of 39.4 W·h/kg is achieved at power density of 746 W/kg. The OER activity of HS-HEPs is evaluated by a linear sweep voltammetry (LSV) polarization curve in 1 mol/L KOH aqueous solution using a standard three-electrode system. The overpotential of HS-HEPs is identified as 347 mV versus RHE for achieving a current density of 10 mA/cm2, which is smaller than that of commercial IrO2 (372 mV). The HS-HEPs possess the excellent electrochemical performance, which can be ascribed to the high specific surface area, abundant active sites, and high oxygen vacancy content, resulting from the combination of high-entropy perovskite and special hollow structure.

    Conclusions

    High-entropy La(Cr0.2Mn0.2Fe0.2Ni0.2Cu0.2)O3 hollow spheres with a perovskite crystalline structure were prepared by microwave solvothermal process and subsequent calcination treatment. The HS-HEPs possessed the excellent electrochemical performance, which could be ascribed to the high specific surface area, abundant active sites, and high oxygen vacancy content, resulting from the combination of high-entropy perovskite and special hollow structure. Based on the electrochemical performance, HS-HEPs could be used as supercapacitor electrode material and OER electrocatalysts. This work could provide a strategy to design and prepare high-entropy oxides with a hollow sphere structure, having promising applications in energy storage and conversion.

  • Zhiqiang ZHOU, Shuo HUANG, Le DAI, Lisha LIU
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2441-2451.
    Introduction

    Conventional poling methods, such as contact poling and corona poling, are frequently hampered by susceptibility to dielectric breakdown and film failure. Achieving self-poling without external poling procedure required in lead-free ferroelectric thin films is critical for advancing flexible piezoelectric devices. Here, we introduce a LaNiO3 seed layer on flexible mica substrates to induce (001)-textured BiFeO3 films for self-poling, while systematically evaluating the impact of Mn doping on film properties. The resulting self-poled BiFeO3 films achieve a piezoelectric coefficient d33, d≈50 pC/N and demonstrate exceptional bending stability, retaining over 90% of their initial d33, d after more than 5000 bending cycles. This work presents a compelling new pathway for the development of high-performance lead-free flexible ferroelectric devices.

    Methods

    Mica substrates were prepared via blade-cleaving, followed by sequential 3-minute ultrasonic cleaning in anhydrous ethanol, acetone, and anhydrous ethanol to remove contaminants. LaNiO3 solution was synthesized by sol-gel processing: stoichiometric lanthanum nitrate and nickel acetate (La: Ni = 1∶1 mol ratio, 0.2 mol/L concentration) were dissolved in glacial acetic acid with stirring at 80 ℃ until complete dissolution, then stirred for 2 h at 25 ℃. The solution was aged for 48 h at 25 ℃. Subsequently, LaNiO3 solution was spin-coated onto mica substrates at 5000 rpm, dried on a hotplate at 150 ℃, and thermally processed in a rapid thermal annealing furnace under air atmosphere. This involved a pyrolysis step at 400 ℃ for 5 min, followed by crystallization at 700 ℃ for 1 min. Layer-by-layer spin-coating with intermediate annealing achieved the target LaNiO3 electrode thickness. Mn-doped BiFeO3 solutions (0, 1%, 3%, 5% Mn-doping) were prepared by dissolving bismuth nitrate (10% excess), iron nitrate, and manganese acetate in ethylene glycol monomethyl ether (0.4 mol/L concentration), adding citric acid (1∶1 molar ratio to metal ions) as a chelating agent, magnetically stirring for 4 h at 25 ℃, and aging for 48 h. These sols were spin-coated onto LaNiO3/mica substrates, followed by 10 iterative cycles of thermal treatment: drying at 200 ℃ (5 min), pyrolysis at 400 ℃ (5 min), and crystallization at 550 ℃ (5 min) per layer to attain the final film thickness.

    Results and discussion

    The LaNiO3 seed layer promotes a dominant (001) texture in BiFe1-xMnxO3 (0%, 1%, 3%, 5% Mn) thin films. However, increasing Mn dopant concentration induces compressive stress relaxation, significantly degrading the film texture from 92.3% to 56.7%. Undoped and 0.01% Mn-doped films exhibit pronounced out-of-plane self-polarization, yielding piezoelectric coefficients d33, d = 48.6 pC/N and 47.4 pC/N. Internal bias in PFM voltage-phase/amplitude curves and unipolar conduction in I-V characteristics unequivocally confirm a built-in electric field. This field weakens at higher Mn concentrations (x = 0.03 and 0.05), concurrently diminishing self-polarization—A causal relationship demonstrating that self-polarization originates from this internal field. Although increased Mn doping reduces self-polarization, it, however, significantly improves electrical performance: leakage current decreases by 78% at x = 0.05 compared to undoped films. Therefore, optimal Mn doping (x = 0.01) synergistically preserves self-polarization while enhancing electrical performance. As flexible films, BiFe1-xMnxO3 demonstrates exceptional bending stability and mechanical fatigue resistance. P-E hysteresis loops remain invariant under compressive/tensile stresses compared to undeformed states. After 5000 bending cycles at tensile strain (r =10 mm), ferroelectric properties and piezoelectric coefficient d33, d degrade by<10%, confirming outstanding operational durability.

    Conclusions

    This work demonstrates that LaNiO3 seed layers deposited on mica substrates induce a dominant (001) texture in BiFeO3-based thin films. Undoped and 0.01% Mn-doped compositions exhibit significant self-polarization driven by a built-in electric field, while increased Mn doping reduces texture degree from 92.3% to 56.7% and weakens self-polarization. The latter is evidenced by the decrease of piezoelectric coefficient, d33, d, from 48.6 pC/N to 14.6 pC/N. Crucially, despite diminishing self-polarization, Mn doping substantially enhances electrical properties (78% leakage reduction at x=0.05). All films endow exceptional mechanical resilience: after 5,000 bending cycles (r = 10 mm), d33, d degrades <10%, with P-E hysteresis loops remaining unaffected. By synergistically integrating texture engineering and doping optimization, we achieve self-poling with a d33, d≈50 pC/N, establishing a novel technological pathway for lead-free flexible ferroelectric devices.

  • Jiyuan LUO, Donghai DING, Guoqing XIAO
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2597-2612.

    The introduction of graphite endows refractories the superior thermal shock resistance and slag corrosion resistance, which makes carbon-containing refractories an indispensable support for metallurgy. The existing widely used shaped carbon-containing refractories include MgO-C, Al2O3-C, as well as Al2O3-MgO-C, and Al2O3-ZrO2-C. The development on carbon-containing castables has attracted recent attention. The excellent properties of carbon-containing refractories mainly contribute to the low thermal expansion, high thermal conductivity and low permeability to molten steel and slags of graphite. However, a high carbon content (about 10%-30%) in conventional carbon-containing refractories is prone to increase the carbon pick-up in steel, affecting the production of clean steel and low-carbon steel. In addition, the sensitivity of carbon to oxidation leaves numerous pores in refractories and releases COx gases, which accelerate the corrosion of the refractories and greenhouse effect. It is thus of great importance to develop low-carbon (i.e., <8%) and ultralow-carbon containing refractories. However, directly decreasing the use of graphite usually leads to the deterioration of the thermal shock resistance of the refractories. Therefore, more and more attention is paid to the study of thermal shock resistance of carbon-containing refractories. Expansion and optimization of thermal shock theory of refractories, improvement and modification of thermal shock resistance testing methods, and exploration and innovation of thermal shock resistance improvement methods are the inseparable directions of the research on the thermal shock resistance of carbon-containing refractories.

    This review represents recent development on thermal shock theory of refractories. The theory derived from linear elastic fracture mechanics suits dense ceramics and specific refractories and strength while it cannot be used in assessing the thermal shock resistance of carbon-containing refractories with high porosities and numerous defects. The unified theory derived by Hasselman clarifies the resistance of materials to both fracture initiation and crack propagation, and the parameter Rst can determine the thermal shock resistance of refractories. Compared to the theories above, those derived from elastic-plastic fracture mechanics with a strain energy-fracture energy as the parameters determine the resistance of refractories to thermal shock more precisely for that the fracture of refractories under strain is prone to have elastic-plastic characteristics. The development of wedge splitting test achieves the specific fracture energy of refractories. The brittleness determining parameters like the characteristic crack length and the Brittleness number can be calculated.

    The existing methods used in testing the thermal shock resistance of refractories mainly contain quenching test, splitting test, cyclic test and nanoindentation. Compared to the qualitive quenching method, splitting test can assess the thermal shock resistance of refractories quantitively. Furthermore, the ability of refractories resisting thermal strain and mechanical strain can be also revealed. Nanoindentation has some dispensable advantages in exhibiting the evolution of mechanical properties in micro-/nano-scales, while it still needs numerous explorations to standardise the testing schedule on refractories.

    Researches on improving the thermal shock resistance of refractories mainly concentrate on matrix toughening, aggregates modification and aggregate/matrix interface designing. Nanocarbons and ceramic whiskers are commonly used as additives to strengthen and toughen the refractory matrix. Researches on modifying magnesia aggregates to improve the thermal shock resistance of MgO-C refractories are conducted, while seldomly reported in other refractories. The design of the aggregate/matrix interface can also effectively improve the thermal shock resistance of refractories, and preparing interfacial layer with a tailored structure for load transmission and crack deflection is a potential method.

    Summary and prospects

    The development of improving the thermal shock resistance of refractories materials is based on scientific and reliable thermal shock resistance theories combined with scientific and accurate testing methods, and thermal shock resistance enhancement methods. The research on the thermal shock resistance of carbon-containing refractories focuses on the composition/structure nano-scaling and microstructure design. However, single modification approach cannot fulfil the requirement imposed by the low-carbon containing refractories ascribe to their complex thermal shock behavior. Integration of matrix toughening, aggregates modification and aggregate/matrix interface design is assumed to exhibit some effects on improving the thermal shock resistance of refractories.

    Macro-mechanical testing methods are not sensitive to the optimization of the microstructure of refractories. Nanoindentation method can test the mechanical properties of materials in micro-scales. The combination of macro-mechanical property test and micro-mechanical property test can deeply reveal the improving mechanism of the properties of refractories. There is still a long way for nanoindentation to be widely used in refractories with a high heterogeneity because of its nano-scale characteristics. It is of great importance to standardise nanoindentation test in refractories.

    Numerical simulation and machine learning can verify the experimental results and predict the properties of refractories. Combining them with experiments can provide a further guidance for the microstructure design of refractories. Besides, the combination of numerical simulation and nanoindentation or fatigue test can accelerate the development of nanoindentation test standards and fatigue test standards for refractories.

  • Hudie YUAN, Yuchi LIU, Hongfeng YIN, Yalou XIN, Yun TANG, Xiaohu REN, Yunqin GAO, Dongyun GUI, Xinyue ZHANG
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2568-2576.
    Introduction

    To improve the quality and efficiency of the nickel metal melting process, the performance of oxygen-rich top-blown melting furnaces must be considered, particularly the furnace lining material used in the melt pool area. As a furnance lining, the refractory material is exposed to the mechanical and thermal stresses, and the corrosion of the refractories by the slag is an important cause of their failure. Investigating the corrosion resistance of refractories is thus a prerequisite to improve the service life of materials and ensure the product quality. Semi-rebonded magnesia-chrome bricks with a superior high-temperature performance is currently the first option for oxygen-rich top-blown furnace linings. However, the effect of Cr6+ after using magnesia-chrome bricks should not be ignored due to environmental protection requirements. The development of refractories with a superior high-temperature performance can replace the semi-rebonded magnesia-chrome bricks used directly in the oxygen-rich top-blown molten furnace bath, which is imperative. In this paper, different types of bricks (i.e., semi-rebonded magnesia-chrome bricks, high alumina bricks, and clay bricks) were used, and their phase compositions and microstructures were analyzed. In addition, the mechanism of high-temperature corrosion of nickel slag and refractories was also investigated via thermodynamic simulations, thus providing a theoretical reference for the design and manufacture of environmentally friendly furnace lining materials.

    Methods

    The corrosion resistances of semi-rebonded magnesia-chrome bricks (Beijing Yenai Jiye New Technology Co., China), high alumina bricks (Zhengzhou Rongsheng Kiln Refractories Co., China), and clay bricks (Zhengzhou Rongsheng Kiln Refractories Co., China) to nickel slag with the size of 325 mesh (Jinchuan Group Co., Ltd., China) from the top-blown furnaces were analyzed by a static crucible method. The crucible specimens used were cylindrical specimens with a diameter of φ50 mm×50 mm and holes with a diameter of φ 20 mm×20 mm in the center, which were drilled with a rock drilling and coring machine. The dried crucible was filled with 25 g of nickel slag powder and reacted at 1450 ℃ for 3, 7, and 11 h to obtain specimens after corrosion. The corroded specimens were then cut uniformly along the axial direction, and their cross-sections were analyzed. After fixing the corroded specimens with epoxy resin, the specimens were polished to obtain specimens for microstructure analysis.

    The microstructures of the corroded specimens were determined by field-emission scanning electron microscopy in the back-scattered electron mode (FE-SEM, Gemini 500, ZEISS Co., Germany). The phase compositions of the corroded specimens were analyzed by X-ray diffraction (XRD; D/MAX 2000PC, Rigaku Co., Japan). The corrosion reaction was simulated by a software named Factsage (version 7.0) for thereaction, equilib, and viscosity modules of the thermodynamics simulation.

    Results and discussion

    The semi-rebonded magnesia-chrome bricks, high alumina bricks, and clay bricks are exposed to nickel slag corrosion at high temperatures. The semi-rebonded magnesia-chrome bricks are found to be more resistant to nickel slag corrosion and penetration because of the formation of a spinel isolation layer at the interface between the slag and the refractory. The slag content in both the high alumina bricks and clay bricks during reaction with nickel slag corrosion is higher than that in the semi-rebonded magnesia-chrome bricks under the same conditions. Al2O3 in the clay bricks continuously dissolves in the slag due to the presence of more SiO2 in the slag, resulting in a poor resistance of the clay brick to nickel slag corrosion. The viscosity of the slag gradually increases due to the grid structure formed by Si-O, weakening the penetration of the slag into the clay brick. Although high alumina bricks have some resistance to nickel slag corrosion, their resistance to nickel slag penetration is worse than that of clay bricks.

    Conclusions

    The spinel isolation layer formed during the corrosion reaction between the semi-rebonded magnesia-chrome bricks and nickel slag effectively blocked the penetration of slag into the interior of the material. High-alumina bricks could only form a corrosion isolation layer when corundum reached a saturation solubility in the slag. A corrosion isolation layer could not be formed during the corrosion reaction of the clay bricks. However, as mullite continued to dissolve in the slag, SiO2 content in the molten slag increased and the network structure composed of Si-O enhanced the viscosity of the slag, thus weakening its ability to penetrate the interior of the clay bricks.

  • Ziqing ZHONG, Qianyu ZHANG, Ze XU, Fanda ZENG, Zhipeng XING, Yixuan LIU, Chunlin ZHAO, Ke WANG
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2613-2621.
    Introduction

    (K, Na)NbO3 (KNN)-based lead-free piezoelectric ceramics are considered to be one of the important candidates to replace lead-based piezoelectric ceramics due to their high Curie temperature and excellent comprehensive performance. To further improve its performance, the strategy of element doping is employed. The doping behavior of the Mn element in pressure-sintered KNN ceramics has been extensively studied. However, there are significant differences in the density of Mn-doped KNN ceramics in different works, which poses a challenge to the analysis of the underlying mechanism of Mn doping and its modification effect. Therefore, this study takes hot-pressed KNN ceramics as the research object due to their high densification, and systematically explores the impact of Mn doping on the microstructure and electrical properties of KNN ceramics.

    Methods

    In this study, KNN ceramics with MnO2 doping were prepared by hot-pressed sintering. The specific composition is (K0.5Na0.5)NbO3-x% MnO2 (abbreviated as KNN-x% MnO2, x = 0, 0.5, 1.0, 1.5). The raw materials include K2CO3 (99.0%), Na2CO3 (99.8%), Nb2O5 (99.99%), and MnO2 (98.8%), all of which were purchased from Sinopharm Chemical Reagent Co., Ltd. First, carbonate and Nb2O5 were placed in a nylon ball mill with zirconia balls according to the formula ratio, and ball milled for 24 h using anhydrous ethanol as the medium; the ball-milled slurry was dried and calcined at 730 ℃ for 4 h, and then ball-milled again and calcined again at 930 ℃ for 4 hours. Subsequently, different amounts of MnO2 were added to the calcined powder, mixed and ball-milled for 24 h, and then dried and ground to obtain Mn-doped KNN ceramic powder. Finally, the ceramic block was prepared by hot pressing and sintering at 950 ℃ and 30 MPa for 2 h under argon atmosphere. After cutting, grinding, and annealing at different temperatures, the sample surfaces were subsequently coated with silver electrode for electrical measurements. The poling process was performed at 3.5 kV/mm in 120 ℃ silicone oil for 30 min.

    The surface micromorphology of the ceramics was characterized by Merlin scanning electron microscope (SEM). The crystal structure was analyzed by D/Max 2500 X-ray diffractometer (XRD). The density of the samples was measured using the Archimedean drainage method. The dielectric properties were tested using a TH2827 impedance analyzer. The ferroelectric properties were obtained using a TF Analyzer 2000 ferroelectric analyzer. The piezoelectric constant d33 was measured using a ZJ-3A quasi-static d33 tester. The mechanical quality factor Qm was measured using a TH2839 impedance analyzer. The local domain structure and domain switching behavior were tested and analyzed using an MFP-3D atomic force microscope with piezoelectric force microscopy (PFM).

    Results and discussion

    High-density (relative density > 98%) KNN-x% MnO2 ceramics were successfully prepared by hot pressing sintering process. XRD results show that MnO2 doping does not change the perovskite phase structure of KNN. With the increase of Mn doping amount, the Pr of the ceramic shows a trend of first increasing and then slightly decreasing. At x = 1.0-1.5%, Pr reaches 14.92-18.32 μC/cm2, d33 can reach up to 106 pC/N, and both positive and negative strains are improved, reflecting enhanced ferroelectric and piezoelectric responses after Mn doping. PFM test shows that the switching voltage of the local ferroelectric domain gradually increases from 5 V to 20 V, indicating that Mn doping enhances the domain wall pinning effect. At the same time, the mechanical quality factor Qm of the ceramic is significantly improved, with the highest value reaching 175, reflecting the typical "hard" doping behavior.

    Conclusions

    This study found that Mn-doped KNN ceramics exhibit an atypical "hard" doping effect for the high-density hot-pressed ceramics that is different from the traditional doping mechanism in lead-based ceramics, in which Qm and Pr are simultaneously improved and d33 is maintained at a high value. This atypical "hard" doping effect induced by Mn doping provides a new perspective for understanding the mechanism of element doping in the KNN system, and also provides significant guidance for the optimized design of high-performance lead-free piezoelectric ceramics.

  • Yongping LIU, Qi DING, Yuchi FAN, Wan JIANG
    Journal of the Chinese Ceramic Society. 2025, 53(9): 2622-2631.
    Introduction

    The rapid advancement of electronic technologies leads to a widespread electromagnetic interference (EMI), which disrupts device performance and poses health risks, including neurological disorders, due to the prolonged exposure. Some emerging fields such as 5G communications, IoT, aerospace, and defense demand high-performance EMI shielding materials capable of operating under extreme conditions (e.g., high temperatures, radiation, and humidity) to ensure device reliability and data security. Conventional shielding materials (i.e., metals, carbon-based materials, and MXenes) have some limitations. Metals suffer from high density and corrosion, while carbon-based materials and MXenes degrade in high-temperature or oxidation environments. In contrast, ceramic materials, particularly perovskite oxides, offer superior thermal stability, corrosion resistance, and mechanical strength, making them promising candidates for next-generation EMI shielding. Among perovskite oxides, SrTiO3 ceramics exhibit a high dielectric constant and superior insulating properties, but their intrinsically low conductivity limits their EMI shielding performance. The high-entropy design strategy, which incorporates multiple elements to enhance synergistic effects, provides a novel approach to improve electrical conductivity and thermal stability. Applying this high-entropy design to perovskite oxide ceramics can optimize their electromagnetic shielding performance under high-temperature environment, providing new research perspectives and technical pathways for developing novel high-temperature EMI shielding materials. In addition, the effect of high-temperature annealing on perovskite oxide performance remains unclear. Annealing in air leads to oxygen vacancy annihilation, causing structural and electronic changes that degrade both conductivity and EMI shielding efficiency. It is thus crucial to optimizing material design and ensuring stable performance under harsh environmental conditions. This study was to use a high-entropy design approach to develop perovskite oxide ceramics, and the EMI shielding properties in the X-band and their stability under high-temperature annealing were investigated. This work was to advance the development of robust, high-temperature EMI shielding materials via elucidating the annealing-induced structural and performance evolution, thus providing both theoretical insights and practical solutions for next-generation electronic and aerospace applications.

    Methods

    The perovskite oxide ceramics were synthesized via solid-state reaction with high-purity raw materials (i.e., SrCO3, BaCO3, CaCO3, La2O3, Na2CO3, K2CO3, and TiO2, all >99% purity from Aladdin Co., China). The powders were initially calcined at 400 ℃ for 3 h to remove moisture, and then ground by stoichiometric ball-milling in ethanol (150 r/min, 6 h). After rotary evaporation drying, the mixture was sintered in air at 1500 ℃ for 5 h to obtain pre-sintered powders, which were further ground into fine particles. The dense disk-shaped samples (φ26 mm) were prepared via vacuum hot-pressing (i.e., 10 Pa, 1400 ℃, and a heating rate of 10 ℃/min) at 70 MPa for 30 min, and subsequently annealed in air at 1000 ℃ for 1 h.

    Results and discussion

    Two A-site high-entropy perovskite ceramics, i.e., (SrBaCaLaNa)0.2TiO3 and (SrBaCaLaK)0.2TiO3, are prepared through high-entropy design strategy. The XRD patterns indicate that the both ceramics maintain a single-phase cubic perovskite structure before and after 1000 ℃ annealing, and a peak shifts corresponding to average A-site ionic radii. The SEM images/EDS mapping and TEM images/EDS mapping demonstrate excellent elemental homogeneity without segregation, showing an effective solid solution formation. The Grain e analysis reveals a good structure stability after annealing due to the lower treatment temperature, compared to sintering temperature. The electron paramagnetic resonance (EPR) measurements show an enhanced oxygen vacancy concentration in high-entropy ceramics, compared to SrTiO3. The electrical characterization indicates a room-temperature conductivity of 21 S/cm for (SrBaCaLaNa)0.2TiO3 and 16 S/cm for (SrBaCaLaK)0.2TiO3 due to La3+ aliovalent doping and oxygen vacancies. However, annealing causes 4-order conductivity reduction due to oxygen vacancy annihilation via oxygen re-filling. The dielectric analysis demonstrates superior properties in high-entropy ceramics (ε′=50-70, ε″=40-60), which are 20% higher than those of STO, where the conduction loss dominates the dielectric loss mechanism. The enhanced dielectric properties originated from increased dipole polarization and conduction loss associate with a higher oxygen vacancy concentration.

    EMI shielding evaluation shows the superior performance with SETotal >25 dB (99.6% efficiency) in X-band for both high-entropy ceramics, where reflection dominates the shielding mechanism (i.e., SER>10 dB, >90% reflectivity) due to large impedance mismatch. (SrBaCaLaNa)0.2TiO3 ceramic exhibits a slightly better shielding performance due to its higher oxygen vacancy concentration and conductivity. After annealing, high-entropy ceramics still outperform STO, while shielding performance degraded (i.e., SETotal<20 dB), maintaining SER and SEA at 10 dB. This result demonstrates that high-entropy design effectively enhances EMI shielding properties through lattice distortion effects, i.e., 1) modified local dipole moments from atomic displacement, and 2) enhanced dipole polarization through electron cloud redistribution. However, the performance degradation after annealing indicates that high-entropy design cannot completely prevent property deterioration in high-temperature oxidation environment, primarily due to oxygen vacancy and conductivity elimination.

    Conclusions

    A-site high-entropy perovskite ceramics, i.e., (SrBaCaLaNa)0.2TiO3 and (SrBaCaLaK)0.2TiO3, prepared via a high-entropy design, exhibited a single-phase cubic perovskite structure with a homogeneous elemental distribution. Compared to single-component STO ceramics, these high-entropy ceramics demonstrated higher oxygen vacancy concentration and electrical conductivity, leading to enhanced electromagnetic wave reflection and absorption. In the X-band, their total EMI shielding effectiveness exceeded 25 dB, with shielding efficiency surpassing of 99.6%. However, after annealing in air at 1000 ℃, the elimination of oxygen vacancies caused a notable decrease in conductivity, severely weakening polarization and loss capabilities. The reduction in complex permittivity diminished electromagnetic wave reflection and impaired dissipation ability, ultimately deteriorating EMI shielding performance. These results indicated that high-entropy design could improve the EMI shielding properties of perovskite ceramics, but it could not fully prevent performance degradation under high-temperature oxidative conditions.