One-dimensional ceramic phases can effectively fulfill the objective of strengthening and toughening ceramic materials via strengthening mechanisms including "pull-out", "crack bridging", and "crack deflection". These mechanisms enhance material performance via forming a bridge zone at the crack tip, which generates closing stresses, alters the crack propagation path, and dissipates energy through work done against interfacial mechanical resistance during fiber pullout. This significantly improves the mechanical properties and service stability of ceramics, thereby enabling their broader application in high-end fields such as aerospace, electronics, information technology, and energy systems. Silicon carbide (SiC) demonstrates an irreplaceable value in ceramic matrix composites, refractory components, and toughened functional coatings due to its exceptional combination of high hardness, thermal conductivity, chemical stability, and electrical conductivity. In particular, one-dimensional SiC with a high aspect ratio can effectively distribute stress, establish continuous load transfer pathways, and synergistically interact with multiple strengthening and toughening mechanisms, thus meeting the stringent mechanical and functional demands under extreme operating conditions. However, the large-scale application of one-dimensional SiC still faces several technical challenges, i.e., synthesis methods often require high-temperature sintering or vapor deposition processes, along with complex template-assisted fabrication techniques, resulting in high production costs. Moreover, the high specific surface area of one-dimensional SiC leads to severe agglomeration, which compromises dispersion uniformity and markedly reduces the efficiency of reinforcement and toughening. Meanwhile, the existing synthesis processes are prone to yielding products with limited morphological diversity and insufficient purity, thereby failing to meet the stringent material performance requirements of high-end applications. Consequently, developing one-dimensional SiC preparation technologies that integrate high purity, excellent dispersibility, and high aspect ratio becomes a critical strategy for overcoming the existing application barriers. The morphological features and functional properties of one-dimensional SiC are fundamentally governed via the growth mechanisms and the precision of process control during synthesis. A thorough understanding of these growth mechanisms can provide an essential theoretical guidance for achieving precise morphological regulation. It is thus possible to establish a systematic correlation among "process parameters, microstructural morphology, and macroscopic properties" via elucidating the thermodynamic principles across various synthesis systems and identifying the effects of key parameters on SiC crystal growth. Optimizing the synthesis process can thus enhance the purity of one-dimensional SiC and effectively address common challenges such as morphological uniformity and particle agglomeration. Based on this framework, this review systematically represents recent advances on SiC synthesis, with a particular emphasis on major preparation methods including carbothermal reduction, electrospinning, self-propagating high-temperature synthesis, and molten salt synthesis. The review analyzes their respective growth conditions, thermal mechanisms, process characteristics, and dynamic growth mechanisms. Furthermore, the review clarifies the advantages and limitations of each technological pathway and outlines future research direction via comparing the resulting product morphologies and key performance indicators such as purity across these methods.