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Dislocation Density Distribution and Etch Pit Morphology of Yttrium Aluminium Garnet Crystal
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Rui ZHANG1, 2, Dajiang MEI1, Xiaotu SHI2, 3, 4, Qingli ZHANG2, 3, 4, Rongguo MA2, 3, 4, Junrui ZHANG2, 3, 4, Renqin DOU2, 3, Guihua SUN2, 3, Xiaofei WANG2, 3, Deming ZHANG2, 3, Jinyun GAO2, 3
Journal of the Chinese Ceramic Society | 2023, 51(6) : 1396 - 1405
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Journal of the Chinese Ceramic Society | 2023, 51(6): 1396-1405
• Research Articles •
Dislocation Density Distribution and Etch Pit Morphology of Yttrium Aluminium Garnet Crystal
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Rui ZHANG1, 2, Dajiang MEI1, Xiaotu SHI2, 3, 4, Qingli ZHANG2, 3, 4, Rongguo MA2, 3, 4, Junrui ZHANG2, 3, 4, Renqin DOU2, 3, Guihua SUN2, 3, Xiaofei WANG2, 3, Deming ZHANG2, 3, Jinyun GAO2, 3
Affiliations
  • 1.College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
  • 2.Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
  • 3.Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China
  • 4.University of Science and Technology of China, Hefei 230026, China

    • ZHANG Rui (1997-), male, Master candidate. E-mail:

About Author:

ZHANG Rui (1997-), male, Master candidate. E-mail:

Published: 2023-06-20 doi: 10.14062/j.issn.0454-5648.20220947
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Yttrium aluminium garnet (YAG) crystals have applications in optoelectronics, and the defect control of crystal growth is a bottleneck problem to be solved. In this work, the dislocation etch pit morphology and density distribution were investigated in YAG crystal grown by the Czochralski method with and without necking technology, and the YAG crystal samples were polished and etched with phosphoric acid. The dislocation etch pits were photographed by a metalphase microscope. The results show that the dislocation density of YAG crystal is the maximum in the initial shoulder part and the minimum in the cylinder part, as well as a little greater at the end part. The dislocation density in necking end is reduced. In addition, the YAG dislocation etch pit of different crystal directions was analyzed, and the surface energy of each YAG crystal surface was calculated, indicating that the relatively stable plane of YAG etch pit is (110) and (112). Based on the analysis by the stereographic projection, the lattice plane stability of (110) and (112) and their position relation to other lattice planes are the important reasons for the formation of etch pit morphology.

yttrium aluminium garnet  /  dislocation etch pit  /  anisortropy  /  surface energy  /  stereographic projection
张瑞, 梅大江, 石小兔, 张庆礼, 马荣国, 张俊蕊, 窦仁勤, 孙贵花, 王小飞, 张德明, 高进云. YAG晶体位错密度分布及蚀坑形貌. 硅酸盐学报, 2023 , 51 (6) : 1396 -1405 . DOI: 10.14062/j.issn.0454-5648.20220947
Rui ZHANG, Dajiang MEI, Xiaotu SHI, Qingli ZHANG, Rongguo MA, Junrui ZHANG, Renqin DOU, Guihua SUN, Xiaofei WANG, Deming ZHANG, Jinyun GAO. Dislocation Density Distribution and Etch Pit Morphology of Yttrium Aluminium Garnet Crystal[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (6) : 1396 -1405 . DOI: 10.14062/j.issn.0454-5648.20220947
Appendix
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Year 2023 volume 51 Issue 6
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Article Info
doi: 10.14062/j.issn.0454-5648.20220947
  • Receive Date：2022-11-02
  • Online Date：2026-10-20
  • Published：2023-06-20
Article Data
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History
  • Received：2022-11-02
  • Revised：2022-11-24
Funding
Affiliations
    1.College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
    2.Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
    3.Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China
    4.University of Science and Technology of China, Hefei 230026, China

Corresponding:

MEI Dajiang (1982-), male, Ph.D., Associate Professor. E-mail:
ZHANG Qingli (1973-), male, Ph.D., Professor.
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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