The limited energy density of supercapacitors poses significant constraints on their practical applications. To address this issue，in this study，the hydrothermal method was used to grow an anthracene-based covalent organic framework（DaTp-COF）in-situ on the surface of graphene oxide（GO），and a novel DaTp/rGO composite electrode material was prepared. The structure，morphology，and electrochemical properties of the material were systematically characterized. The results reveal that the DaTp/rGO composite possesses a unique hierarchical porous structure with micropores，mesopores，and macropores. Meanwhile，the electron-withdrawing effect of the anthracene groups in the structure induces apseudocapacitive response of the Schiff base groups. Benefiting from this，in a three-electrode system with a 0.5mol·L^-1 sulfuric acid electrolyte，the specific capacitance of DaTp/rGO electrode reaches 251F·g^-1 at a current density of 1A·g^-1，which is significantly higher than that of rGO electrode material. In the ionic liquid electrolyte system，the DaTp/rGO electrode only exhibits the characteristics of electric double layer capacitance. However，owing to its excellent hierarchical pore structure，the electrode's specific capacitance is still as high as 158F·g^-1 at a current density of 1A·g^-1，and the capacitance retention rate is 78.82% after 10000 cycles. This study used the in-situ growth method to achieve the synergy between DaTp-COF and rGO，providing new ideas for the research and development of high-performance supercapacitor electrode materials，and helping supercapacitors break through their application limitations.

With the continuous development of tactile sensing technology，the application of piezoelectric materials in tactile sensors has garnered increasing attention. Currently，tactile sensors face challenges such as low recognition accuracy，insufficient response sensitivity，and poor stability in complex environments. To address these issues，research was conducted on utilizing the piezoelectric properties of polyvinylidene difluoride（PVDF）to convert external force signals into electrical signals for sensor design. Additionally，a microcontroller was utilized for real-time acquisition and storage of data collected by tactile sensors. At the same time，the improved Back Propagation（BP）neural network was combined withParticle Swarm Optimization（PSO）to enhance signal processing and recognition capabilities. The sensitivity and response accuracy of the sensor were significantly improved through the design of a PVDF multilayer structure. The results show that the classification performance（accuracy 98.54%，recall 98.13%，F1 value 97.42%）is significantly better than that of the comparison algorithm，and the highest recognition accuracy of the sensor for different roughness and hardness items reaches 95% and 96%，respectively，with a maximum root mean square error（RMSE）of only 0.032.In summary，the design of a PVDF piezoelectric film and single-chip tactile sensor based on the improved BP has effectively improved the response accuracy of tactile sensors under different tactile stimuli，with high perceptual sensitivity and stability. This further promotes the application and development of intelligent robots in precision operations and complex tasks.

In recent years，tungsten oxide（WO₃）nanomaterials have garnered significant attention in the field of gas sensors. However，their practical applications are limited by drawbacks such as high operating temperatures and low sensitivity. A series of MoS₂/WO₃ nanocomposites were synthesized via a hydrothermal method. Gas-sensing tests for nitrogen dioxide（NO₂）demonstrated that these composites exhibit excellent sensing performance over a working temperature range of 20-180℃ and an NO₂ concentration range of 1ppm-100ppm. Notably，the MoS₂/WO₃ composite with a 2% MoS₂ doping ratio achieved a remarkable response value of 1123.19 toward 20ppm NO₂ at 140℃—seven times that of pure WO₃ at its optimal working temperature（80℃）. Characterization and mechanistic studies revealed that the combination of MoS₂ and WO₃ forms a p-n heterojunction，inducing a charge depletion layer at the interface. Additionally，the band bending effect reduces the energy barrier for gasmolecule adsorption，thereby enhancing both the gas adsorption capacity and surface reaction activity of the composite. This study provides a novel material design strategy and technical approach for developing high-performance，low-temperature NO₂ gas sensors.

To meet the high demands of 500-kW electromagnetic propulsion systems on pulse power supplies in terms of energy density，conversion efficiency，and output stability，this paper presented a pulse power supply design based on a hybrid energy storage system combining supercapacitors and film capacitors. The power supply employed supercapacitor banks for energy storage and film capacitor banks for instantaneous high-power discharge. An efficient discharge topology ensured stable power transmission to the load module，while a three-level protection mechanism enhanced the safety and reliability of the discharge process. Experimental results indicate that the prototype achieves an energy density of 18.3Wh/kg，and a conversion efficiency of 91.74%. The pulse current overshoot is controlled within 5.00%. All these metrics satisfy the technical requirements of 500-kW class electromagnetic propulsion systems. The proposed pulse power supply effectively addresses issues such as low energy density，poor conversion efficiency，and insufficient load adaptability in existing medium-power electromagnetic propulsion pulse power supplies.

To address the limitations of conventional opamp-free bandgap reference architectures—specifically their high temperature coefficient and insufficient power supply rejection ratio（PSRR）performance，which fail to meet high-precision application requirements—a high-PSRR bandgap reference circuit with segmented curvature compensation was designed. The proposed bandgap reference circuit adopts a voltage self-regulation structure，which suppresses power supply ripple in the low-frequency range through a negative feedback loop and enhances the anti-interference capability of the output voltage. Furthermore，a PTAT²（proportional to absolute temperature squared）compensation circuit was integrated to generate a compensation current，enabling segmented curvature compensation and thus realizing a significant reduction in the temperature coefficient. The proposed bandgap reference circuit was designed based on the SMIC 0.18 μm CMOS process. Simulation results indicate that，at an operating voltage of 3.3V，the bandgap reference output voltage is 1.197V；over the temperature range of-45 ℃ to 125 ℃，the temperature coefficient is 5.38×10^-6/℃. The PSRR of this bandgap reference at low frequencies reaches-103dB，and the circuit has a quiescent current of 14.8 μA.