This paper investigated the effect of thermally assisted light soaking （TALS） on the performance of amorphous/crystalline silicon heterojunction （SHJ） solar cells. The experimental results confirm that light soaking （LS） effectively improves the power conversion efficiency and fill factor of SHJ solar cells by 0.23% and 0.91%, while TALS increases the gain to 0.34% and 0.98%. By measuring the dark electric conductivity of doped amorphous silicon films before and after the TALS, it is found that TALS has more significant effect on improving the electrical properties of the films compared to LS, enabling n-type amorphous silicon thin film dark electric conductivity gain ratio of 9.05. Combined with Sinton WCT-120 and Suns-V_oc measurements, it is concluded that TALS improves the field passivation performance, enhancing the built-in electric field strength of crystalline silicon and amorphous silicon heterojunction, thus reduces the recombination of minority carriers at the interface, resulting in a light-induced gain of 0.34% in the output performance of SHJ solar cells.

amorphous/crystalline silicon heterojunction solar cells  /  silicon heterojunction solar cells  /  light soaking  /  thermally assisted light soaking  /  photo conductivity  /  minority carrier lifetime