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Enhanced in-plane polarization in two-dimensional GaInS3 via strain engineering for self-powered photodetector
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Zongdong Suna, Jie Liua, Na Zhanga, Wanfu Shenb, Chunguang Hub, Liang Lic, Feng Yand, Fangfang Xiaa, Huiqiao Lia, Yuan Lia, Tianyou Zhaia, e, f, *
Transactions of Materials Research | 2025, 1(1) : 100009
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Transactions of Materials Research | 2025, 1(1): 100009
INORGANIC MATERIALS
Enhanced in-plane polarization in two-dimensional GaInS3 via strain engineering for self-powered photodetector
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Zongdong Suna, Jie Liua, Na Zhanga, Wanfu Shenb, Chunguang Hub, Liang Lic, Feng Yand, Fangfang Xiaa, Huiqiao Lia, Yuan Lia, Tianyou Zhaia, e, f, *
Affiliations
  • aState Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
  • bState Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, China
  • cKey Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, China
  • dDepartment of Applied Physics, Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, 999077, Hong Kong, China
  • eResearch Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen, 518057, China
  • fOptics Valley Laboratory, Wuhan, 430074, China
Published: 2025-04-05 doi: 10.1016/j.tramat.2025.100009
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Self-powered two-dimensional (2D) polarization-sensitive photodetectors have propelled the advancement of the next-generation optoelectronics. However, currently such devices mainly depend on the stacking of multiple 2D heterojunctions to realize this function, which demands precise operational procedures and strict band alignment. Herein, we present the achievement of self-powered polarization photodetection in 2D GaInS3 via strain engineering. This primarily depends on the intrinsic in-plane anisotropic structure and internal spontaneous polarization of 2D GaInS3. Remarkedly, the strained GaInS3 devices exhibit superior optoelectronic performance with a high on/off ratio (>104), and large anisotropy ratio (~5.4). Furthermore, the strained device can achieve self-powered high-resolution polarization imaging. This work offers a guideline valuable for developing high-performance 2D self-powered polarization photodetectors.

Two-dimensional materials  /  Self-powered photodetector  /  Polarization  /  Strain engineering  /  In-plane anisotropy
Zongdong Sun, Jie Liu, Na Zhang, Wanfu Shen, Chunguang Hu, Liang Li, Feng Yan, Fangfang Xia, Huiqiao Li, Yuan Li, Tianyou Zhai. Enhanced in-plane polarization in two-dimensional GaInS3 via strain engineering for self-powered photodetector[J]. Transactions of Materials Research, 2025 , 1 (1) : 100009 - . DOI: 10.1016/j.tramat.2025.100009
  • National Key R&D Program of China(2023YFE0210800)
  • National Natural Science Foundation of China(U21A2069; 22350003)
  • Shenzhen Science and Technology Program(JCYJ20240813153403005; JCYJ20220818102215033)
  • Guangdong Basic and Applied Basic Research Foundation(2023B1515120041)
  • Innovation Project of Optics Valley Laboratory(OVL2023PY007)
  • Guangdong HUST Industrial Technology Research Institute, and Guang-dong Provincial Key Laboratory of Manufacturing Equipment Digitization(2023B1212060012)
Year 2025 volume 1 Issue 1
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Article Info
doi: 10.1016/j.tramat.2025.100009
  • Receive Date:2025-03-21
  • Online Date:2026-06-10
  • Published:2025-04-05
Article Data
Affiliations
History
  • Received:2025-03-21
  • Revised:2025-04-04
  • Accepted:2025-04-05
Funding
National Key R&D Program of China(2023YFE0210800)
National Natural Science Foundation of China(U21A2069; 22350003)
Shenzhen Science and Technology Program(JCYJ20240813153403005; JCYJ20220818102215033)
Guangdong Basic and Applied Basic Research Foundation(2023B1515120041)
Innovation Project of Optics Valley Laboratory(OVL2023PY007)
Guangdong HUST Industrial Technology Research Institute, and Guang-dong Provincial Key Laboratory of Manufacturing Equipment Digitization(2023B1212060012)
Affiliations
    aState Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
    bState Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, China
    cKey Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, China
    dDepartment of Applied Physics, Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, 999077, Hong Kong, China
    eResearch Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen, 518057, China
    fOptics Valley Laboratory, Wuhan, 430074, China

Corresponding:

* State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China. E-mail address: (T. Zhai).
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表12种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
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Genus
种数
Number of
species
占总种数比例
Percentage of total
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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