Conventional terahertz (THz) single-pixel imaging relies on a sequential process involving compressed sensing, which requires a spatial modulator and is often time-intensive. Here, we propose a new THz single-pixel imaging scheme operating in a parallelized fashion with a pixelated metasurface, demonstrated within a standard THz time-domain spectroscopy system. This approach encodes spatial information through multiple narrow linewidth resonances based on bound states in the continuum (BIC) physics, and the BIC-enabled pixelated metasurface facilitates the near-field distributed sensing through local field enhancement. We validate this integrated imaging and sensing capability using a 2×2 metasurface array in a proof-of-concept experiment, with scalability to larger arrays. The approach achieves 100% accuracy in binary imaging reconstruction from a single THz pulse and enables refractive index sensing with a sensitivity higher than 14.39 GHz/RIU. Leveraging the intrinsic penetration capability of THz radiation, this technique offers significant promise for next-generation noninvasive applications such as security inspection and defect detection in semiconductor chips and pharmaceutical products.

Bound states in the continuum (BICs) have emerged at the forefront of optics and nanophotonics due to their exceptionally high quality-factors and unique topological characteristics. Advances in design capabilities, nanofabrication and characterization have enabled precise control of BIC resonances at subwavelength scale, unlocking exciting opportunities for applications in diverse areas such as lasing, optical sensing and nonlinear optics. The integration of phase-change materials and liquid crystals has facilitated dynamic control over light emission and absorption. In this Review, we provide a comprehensive overview of the latest progress in BIC research, covering both foundational concepts and recent advances. We begin with the underlying physics and highlight emerging design strategies, including machine learning and inverse design approaches. We discuss major breakthroughs in super-BICs, chiral BICs, intriguing concepts of flatband BICs and Moiré BICs, along with exotic phenomena, such as strong light-matter interaction, ultrafast dynamics and exceptional points. We further review the recent advancements and key challenges in BIC-enabled applications. Finally, we offer our perspectives on the promising future of BIC in fundamental research emphasizing emerging directions such as multilayer metasurfaces, interfacing BICs with quantum emitters, new capabilities enabled by advanced fabrication and design, and pathways towards scalable integration into photonic BIC metadevices.

Incorporating perovskite nanocrystals (PNCs) in the glass matrix has been demonstrated to be an effective route to improve their stability for long-term operation. However, simultaneously achieving high luminance and high photoluminescence (PL) quantum yield (QY) is challenging. Herein, we report a strategy that employs fluoride ion doping to modify the three-dimensional glass network, thereby optimizing the crystallization behavior of PNCs and achieving both high luminance and high PLQY in full-spectrum. Leveraging these high-performance transparent composites, we constructed a dynamic holographic multicolor display system by integrating with a spatial light modulator (SLM), achieving a pixel density as high as 20,247 pixels per inch (PPI). We further propose a vertically stacked, multilayer full-color display architecture that overcomes the limitations of color filters in light-utilization efficiency and the bottlenecks of conventional planar sub-pixel layouts in terms of spatial utilization and resolution.

Near infrared polarized photodetectors are widely used, and van der Waals heterostructures based on transition metal dichalcogenides are important platforms for device research and application. Homologous polymorphic two-dimensional chalcogenides refer to two-dimensional chalcogenides with the same chemical composition but different crystal structures. Homologous polymorphic two-dimensional chalcogenides have shown great potential in near-infrared detection due to their unique bandgap characteristics, exciton effects, and controllable optoelectronic properties. This paper studies a near-infrared polarized photodetector based on 1T'-MoTe₂/2H-MoTe₂ structure, in which the semimetallic 1T'-MoTe₂ has attracted attention due to its low work function and excellent electrical performance. 1T'-MoTe₂ and 2H-MoTe₂ form a favorable bandgap structure after forming a heterojunction, which improves carrier separation efficiency and photoelectric response. This device exhibits excellent high-sensitivity optoelectronic detection performance in the wideband region (532–2200 nm), such as significant high responsivity (3.06 A·W^–1) under 1310 nm laser, specific detectivity (3.2 × 10⁹ Jones), good external quantum efficiency (289%), and fast rise and decay response times of 10.56 ms/6.26 ms. In addition, the device has polarization detection capability, achieving a high polarization sensitivity of 20.1. The device has successfully achieved imaging from visible light to near-infrared light, highlighting the potential of 1T'-MoTe₂/2H-MoTe₂ heterojunction as a polarization sensitive detector.

Indium phosphide-based quantum dots (InP-based QDs) have emerged as promising candidates for next-generation display and optoelectronic technologies, offering exceptional photoluminescent (PL) properties including high efficiency, narrow emission spectra, and precisely tunable wavelengths. Nevertheless, their widespread commercialization encounters substantial obstacles, primarily stemming from persistent challenges in synthetic control and material processing. Critical performance parameters—including photoluminescence quantum yield (PL QY, currently<90% for most systems), emission linewidth (typically>35 nm) as well as external quantum efficiency (EQE) and operational stability of device—continue to show only incremental improvements, highlighting the urgent need for fundamental breakthroughs in QDs synthesis, surface engineering and device optimization. This review systematically examines the nucleation mechanisms governing InP core formation and outlines key strategies for optimizing InP-based core/shell QDs. Furthermore, we present a comprehensive analysis of recent breakthroughs in red, green, and blue-emitting InP-based QD light-emitting diodes (QLEDs) development, focusing on modulation of charge transport engineering and suppression of charge leakage. Finally, we critically evaluate the remaining commercialization challenges and future prospects for InP-based QLEDs in next-generation display and optoelectronic technologies, outlining potential pathways for overcoming current limitations.

Rapidly developing augmented/virtual reality (AR/VR), light detection and ranging (LiDAR), and holographic display technologies require spatial light modulators (SLMs) with high pixel resolution and fast refresh rates to meet increasing application demands. However, existing modulators are limited by large pixel sizes and low spatiotemporal product density. A recent work reports an optically addressed metasurface spatial light modulator (OA-MSLM) that achieves sub-micron pixel pitch with optical addressing of independently tunable meta-atom supercells. The device enables real-time complex-amplitude holography, three-dimensional focusing, and wide-angle beam steering in the visible spectrum. This approach represents a revolutionary paradigm in wavefront control, promising scalable platforms for three-dimensional display, additive manufacturing, and adaptive optics.

Conventional optical microscopy is fundamentally constrained by the optical diffraction limit (~200 nm), restricting the observation of nanoscale features in advanced manufacturing. To address this challenge, a remote-mode microsphere-enabled nanoscale imaging technology has been developed and successfully translated from laboratory innovation to industrial application. By utilizing a suspended transparent microsphere as a miniature lens, the system enables real-time, non-contact optical imaging and resolves 23 nm gaps on silicon wafers and 77 nm metal probes in hard-disk magnetic heads through reverse optical-path reconstruction of virtual images. The technology has been commercialized by PHAOS Technology, achieving over 300% annual sales growth and receiving the "Manufacturing Technology Disruptor of the Year" award. By integrating a universal lens adapter, the system allows a standard 20× objective to achieve imaging performance comparable to a 50× objective at only one-tenth of the cost of high-end super-resolution systems. This approach represents an important advancement in scalable and cost-effective nanometrology, providing a practical solution for real-time semiconductor inspection and industrial quality control.