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Ultra-sensitive multi-band infrared polarization photodetector based on 1T'-MoTe2/2H-MoTe2 van der Waals heterostructure
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Yuting Pan1, 3, Lidan Lu1, *, Bofei Zhu2, Chunhua An4, Jing Yu1, Guanghui Ren5, Jian Zhen Ou5, *, Mingli Dong1, *, Zheng You2, *, Lianqing Zhu1, *
Opto-Electronic Advances | 2026, 9(3) : 250260-1 - 250260-9
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Opto-Electronic Advances | 2026, 9(3): 250260-1-250260-9
• Article •
Ultra-sensitive multi-band infrared polarization photodetector based on 1T'-MoTe2/2H-MoTe2 van der Waals heterostructure
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Yuting Pan1, 3, Lidan Lu1, *, Bofei Zhu2, Chunhua An4, Jing Yu1, Guanghui Ren5, Jian Zhen Ou5, *, Mingli Dong1, *, Zheng You2, *, Lianqing Zhu1, *
Affiliations
  • 1School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China
  • 2Department of Precision Instruments, Tsinghua University, Beijing 100084, China
  • 3School of Opto-electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
  • 4School of Precision Instruments and Optoelectronic Engineering, Tianjin University, Tianjin 300072, China
  • 5School of Engineering, RMIT University, Melbourne 3000, Australia
About Author:

Author contributions

All authors commented on the manuscript. Yuting Pan proposed the initial idea and supervised the project. Lianqing Zhu, Lidan Lu, and Jianzhen Ou supervised the project, while other authors guided the work, with equal contributions.

Published: 2026-03-25 doi: 10.29026/oea.2026.250260
Outline
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Near infrared polarized photodetectors are widely used, and van der Waals heterostructures based on transition metal dichalcogenides are important platforms for device research and application. Homologous polymorphic two-dimensional chalcogenides refer to two-dimensional chalcogenides with the same chemical composition but different crystal structures. Homologous polymorphic two-dimensional chalcogenides have shown great potential in near-infrared detection due to their unique bandgap characteristics, exciton effects, and controllable optoelectronic properties. This paper studies a near-infrared polarized photodetector based on 1T'-MoTe2/2H-MoTe2 structure, in which the semimetallic 1T'-MoTe2 has attracted attention due to its low work function and excellent electrical performance. 1T'-MoTe2 and 2H-MoTe2 form a favorable bandgap structure after forming a heterojunction, which improves carrier separation efficiency and photoelectric response. This device exhibits excellent high-sensitivity optoelectronic detection performance in the wideband region (532–2200 nm), such as significant high responsivity (3.06 A·W–1) under 1310 nm laser, specific detectivity (3.2 × 109 Jones), good external quantum efficiency (289%), and fast rise and decay response times of 10.56 ms/6.26 ms. In addition, the device has polarization detection capability, achieving a high polarization sensitivity of 20.1. The device has successfully achieved imaging from visible light to near-infrared light, highlighting the potential of 1T'-MoTe2/2H-MoTe2 heterojunction as a polarization sensitive detector.

heterojunction  /  MoTe2  /  polarization  /  shortwave
Yuting Pan, Lidan Lu, Bofei Zhu, Chunhua An, Jing Yu, Guanghui Ren, Jian Zhen Ou, Mingli Dong, Zheng You, Lianqing Zhu. Ultra-sensitive multi-band infrared polarization photodetector based on 1T'-MoTe2/2H-MoTe2 van der Waals heterostructure[J]. Opto-Electronic Advances, 2026 , 9 (3) : 250260-1 -250260-9 . DOI: 10.29026/oea.2026.250260
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1　Introduction
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The development of polarized light detection technology has facilitated people's production and life. In addition to extracting amplitude and frequency information of light, it can also extract polarization information of light to provide more and clearer information about imaging objects (such as surface roughness, texture shape, etc.). It has important applications in medical diagnosis1, fiber optic communication2, aerospace and other fields3. The existing polarization sensitive photodetectors usually add additional components such as lenses or gratings on the detector, which not only increases the cost but also increases the complexity of the system, which is not conducive to the development of product commercialization4. Therefore, there is an urgent need to develop miniaturized, highly integrated, and structurally simple polarization photodetectors.
Due to different detection mechanisms, photodetectors can be further classified into different types, including photoconductive detectors (PbSe5, PbS6, InSb7), photovoltaic detectors (Si8, Ge9, HgCdTe10, InAs11, InSb12), and quantum well detectors (GaAs/AlGaAs13, InGaAs/InP14). However, most traditional photodetectors can only detect specific wavelength ranges, have high dark currents, require consideration of lattice matching issues, and also require complex growth processes, increased external energy sources, complex cooling systems, and other issues. All of these have increased the complexity and cost of the system. In recent years, with the rapid development of two-dimensional materials, many people have studied devices that achieve different functions by constructing heterojunctions of different materials and overcoming the limitations of lattice matching15. Materials with in-plane anisotropic crystal structures have been explored as potential polarization sensitive photodetectors, which can utilize the asymmetry of material structures to directly identify the polarization information of incident light without the need for additional components. For example, materials with anisotropic structures such as GeSe16, GeSe217, ReS218, ReSe219, SnS20, InSe21, and black phosphorus (BP)22 have been explored in polarized photodetectors. GeSe, ReS2, and ReSe2 have large band gaps and are difficult to respond to near-infrared wavelengths, while materials such as BP, InSe, and GeSe are unstable in air and their device performance is prone to degradation. A single GeSe polarization detector has an optimal polarization ratio of 2.16 at 808 nm, but faces the problem of low polarization sensitivity23.
Homologous polymorphic two-dimensional chalcogenides refer to two-dimensional chalcogenides with the same chemical composition but different crystal structures. TMDCs of different crystal phases (such as 1T' phase and 2H phase) exhibit significant differences in electrical, optical and mechanical properties, which provides the possibility for diversified applications of the materials. MoTe2 is a polymorphic material consisting of a semiconductor 2H phase and a metastable semimetal 1T'-phase24. The single-layer 2H phase is a honeycomb structure, while the 1T'-phase is a twisted central honeycomb structure. 1T'-MoTe2, as a new type of two-dimensional topological semimetal, has a gapless electronic structure and excellent optoelectronic properties, which make it show great potential in the field of infrared detection. Its unique crystal structure also gives it the ability to detect polarized light.
Therefore, this article proposes a photodetector with a 1T'-MoTe2/2H-MoTe2 structure, which provides a promising platform for polarization sensitive photodetectors. The 2H-MoTe2 and 1T'-MoTe2 are stacked layer by layer to form a van der Waals heterojunction. The previous research on this junction did not analyze its near-infrared detection performance25, so the focus of this study is to explore the performance of 1T'-MoTe2/2H-MoTe2 hetero-structure as a near-infrared photodetector, especially for detecting polarized light. The results show that the photodetector has good comprehensive detection performance, capable of detecting light in the 532–2200 nm wavelength range. It has high responsivity rate of 3.06 A·W−1 at 1310 nm, high detection rate of 3.2 × 109 Jones, high EQE of 289%, and rapid rise and fall response times of 10.56 ms/6.26 ms. The 1T'-MoTe2/2H-MoTe2 hetero-structure exhibits low dark current and high photo-responsiveness in self driven photo-detection.
2　Experimental section
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2.1　Device manufacturing
The 1T'-MoTe2/2H-MoTe2 heterojunction device was fabricated using a standard dry transfer process. Initially, thin flakes of 1T'-MoTe2 and 2H-MoTe2 were obtained from their bulk crystals via mechanical exfoliation using blue tape and subsequently transferred onto polydimethylsiloxane stamps mounted on glass slides. Under optical microscope observation and alignment assistance, the exfoliated flakes were precisely stacked layer-by-layer onto a p-type silicon substrate with a 285 nm SiO2 layer using a precision transfer system, thereby constructing the heterostructure.
After heterojunction formation, a layer of 950 PMMA A6 e-beam resist was spin-coated onto the structure serving as both a protective layer and patterning medium. Electrode patterns were then defined using electron beam lithography. Subsequently, a 5 nm thick chromium adhesion layer and a 60 nm thick gold layer were deposited as metal electrodes via electron beam evaporation. The final electrode structure was achieved through a lift-off process to remove residual PMMA and excess metal. Finally, the device was annealed at 200 °C for 3 minutes in a nitrogen atmosphere to effectively remove residual organic contaminants and moisture at the interfaces while significantly improving the contact characteristics between the metal electrodes and the two-dimensional materials.
2.2　Electrical and optoelectronic measurements
Observing the morphology and structure of heterojunction devices using an optical microscope, characterizing the morphology and thickness of the devices using a Park atomic force microscope, and measuring the Raman spectra of the materials using a Raman spectrometer under 532 nm laser. All electrical measurements of the 1T'-MoTe2/2H-MoTe2 heterostructure device were taken using a low-temperature probe stage (CRX-VF) and a semiconductor analyser (Keysight B1500A), with the light source being a single point laser of different wavelengths with a uniform diameter of approximately 1 mm.
3　Results and discussion
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3.1　Manufacturing and characterization of 1T'-MoTe2/2H-MoTe2 heterojunction
Figure 1(a) is a three-dimensional (3D) schematic diagram of the proposed 1T'-MoTe2/2H-MoTe2 (Shenzhen Six Carbon Technology Co., Ltd.) photodetector, with 2H-MoTe2 at the bottom and 1T'-MoTe2 at the top. The two materials are vertically stacked to form a heterostructure, and the metal electrode Cr/Au (5 nm/60 nm) is deposited on both materials. The detailed manufacturing process of this heterostructure device can be found in the experimental section. The optical microscope image of the device is shown in Fig. 1(b), and the atomic force microscope (AFM) image of the 1T'-MoTe2/2H-MoTe2 heterojunction is shown in Fig. S1(a), where the inset shows the thickness of the two materials. According to the AFM test results, the thickness of 2H-MoTe2 and 1T'-MoTe2 is 31 nm and 32 nm, respectively. The Raman spectra of each material are shown in Fig. S1(b). For a single MoTe2, the main Raman peaks appear at 173 cm−1 and 234 cm−1, corresponding to the A1g and E2g modes, respectively26. The typical Raman modes of 1T'-MoTe2 include Ag (75, 125, 160, 257 cm−1) and Bg (108 cm−1) modes27. The Raman spectra of their heterojunction regions contain characteristic peaks of 2H-MoTe2 and 1T'-MoTe2, indicating interlayer coupling between the two materials. However, the 2H-MoTe2 peak is relatively small, and the top 1T'-MoTe2 layer suppresses the excitation laser from penetrating 2H-MoTe2. Figure S1(c) shows the spatial photocurrent mapping of the heterojunction, where significant photocurrent is generated in the junction region under 532 nm laser irradiation. Figure S1(d) shows the transfer characteristic of 2H-MoTe2, with drain voltage (Vds) fixed at 1 V. Indicating that 2H-MoTe2 is a p-type semiconductor material. Figure S1(e–f) show the output characteristic of 2H-MoTe2 and 1T'- MoTe2. From the output curve (Ids-Vds) of the 2H MoTe2 transistor, significant nonlinear characteristics can be observed, indicating that a Schottky contact is formed between the metal electrode and the 2H MoTe2 channel, rather than an ideal ohmic contact. And the curve in Fig. S1(f) indicates the semi metallic properties of 1T'-MoTe2. The KPFM measurement of 2H-MoTe2/1T'-MoTe2 is shown in Fig. S2(a), and the results indicate that the surface potential of 1T'-MoTe2 is about 330 mV higher than that of 2H MoTe2, revealing that the former has a higher Fermi level and lower work function. Based on these findings, we constructed energy band diagrams of the heterojunction (Fig. 1(c) and 1(d)). The band structure before contact between 2H-MoTe2 and 1T'-MoTe2 is shown in the Fig. 1(c). The bandgap of 2H-MoTe2 is about 1 eV28, and the work function of 1T'-MoTe2 at 32 nm is about 4.4 eV29. There is a significant band shift between 1T'-MoTe2 and 2H-MoTe2. The band structure after contact between 2H-MoTe2 and 1T'-MoTe2 is shown in the Fig. 1(d). Upon contact, Fermi level alignment generates a built-in electric field at the interface, directed from 1T'-MoTe2 toward 2H-MoTe2. Notably, the orientation of this field aligns with the intrinsic built-in electric field at the Au/2H-MoTe2 interface. The superposition of these co-directional electric fields substantially enhances the driving force for photogenerated carrier separation. Crucially, photogenerated carriers are efficiently produced primarily within the depletion region on the 2H-MoTe2 side. Under the synergistic effect of these dual built-in fields, the electron-hole pairs are rapidly separated: electrons are swept toward the 1T'-MoTe2 side, while holes are driven toward the Au electrode.
3.2　Electrical and optical properties of 1T'-MoTe2/2H-MoTe2 device
In order to explore the electrical properties of 1T'-MoTe2/2H-MoTe2 heterojunction, the electrical properties of its single materials were tested separately. Figure S1(d–f) shows the transfer and output characteristic curves of 2H-MoTe2 and 1T'-MoTe2, where 2H-MoTe2 is a p-type material and 1T'-MoTe2 is a semi metallic material. Taking the 1310 nm laser light source as an example, the current voltage (Ids-Vds) curve at zero gate voltage is shown in Fig. 2(a). As the optical power density increases, Ids also increases significantly, which is attributed to the increase of photogenerated carriers. At a bias voltage of 1 V, Ids reaches its maximum of 3.298 μA when the optical power density is 806 μW/mm2. The I-V curve measured on a logarithmic scale is shown in Fig. S2(b). The rectification behavior can be more clearly observed from the I-V curve plotted on the logarithmic scale. Figure 2(b) shows the relationship between open circuit voltage, short-circuit current, and power density. As the optical power density increases, the open circuit voltage and short-circuit current also continue to increase. The functional relationship between the switching ratio (Iph/Idark) and the optical power density under zero bias is extracted in Fig. 2(c). The photocurrent (Iph) is calculated based on the equation Iph=Ids −Idark, where Idark is the dark current. The Iph/Idark value increases continuously with the increase of optical power density. When the optical power density is 806 μW/mm2, the maximum value is 7×104. The figure shows that at multiple power densities, the Iph/Idark value can reach 104, indicating that the device has a high switching ratio of up to 104 and has great potential for application in photodetectors. Figure S2(c) presents the extracted photocurrent (Iph) as a function of optical power density under a 1 V bias. The relationship between the photogenerated current and optical power density can be well fitted by a power-law equation: Iph ∝ Pα, where Iph and P represent the photocurrent and optical power density, respectively, and α is the fitting parameter indicating linearity. The fitting result yields an α value of 0.77, demonstrating good linearity of the device.
Responsivity (R), specific detectivity (D*), and external quantum efficiency (EQE) are key factors affecting the performance of photodetectors30. Response rate represents how much photocurrent can be generated per unit incident power on the photodetector, calculated as R=Iph/PS, where R is the response rate and S is the effective illuminated area. Figure 2(d) shows the response rate of 1T'-MoTe2/2H-MoTe2 heterojunction devices under 1310 nm laser light source irradiation at 1 V and 0 V bias voltages. As the light density increases, the response rate shows a trend of first increasing and then gradually decreasing. At a power density of 679 μW/mm2, the response rate is the highest, at 0.02 A/W (0 V bias) and 3.06 A/W (1 V bias), respectively. The formula for calculating the specific detectivity is D*=RS1/2/(2qIdark)1/2, where q is the electron charge. The specific detection rate also increases first and then gradually decreases with power density, as shown in Fig. 2(e). At a power density of 679 μW/mm2, it is 2.6×1011 Jones (bias voltage of 0 V) and 3.2×109 Jones (bias voltage of 1 V), respectively. Calculating the specific detectivity through direct measurement of the noise power spectral density is the most accurate method for evaluating detector performance, while the approach based on the shot noise of the dark current may lead to an overestimation of the detectivity. EQE is the external quantum efficiency, which is the ratio of the number of excited charge carriers to the number of incident photons. Its calculation formula is EQE=hcRλ−1e−1, where h is Planck's constant, c is the speed of light, and e is the electron charge. The trend of quantum efficiency changing with light density is the same as the responsivity. At a power density of 679 μW/mm2, the EQE is 2.54% (bias voltage of 0 V) and 289% (bias voltage of 1 V), respectively. In the 2H-MoTe2/1T'-MoTe2 heterostructure, photogenerated electrons and holes are separated by the internal built-in potentials. These separated opposite charges create a counteracting Coulomb potential that balances the internal built-in potentials, thereby enhancing the transport current through the structure and ultimately resulting in a measured apparent EQE greater than 100%31. In addition, the photoelectric response of the device was tested under different laser illumination from visible light to short wave infrared bands, as shown in Fig. S3–S7, including 1550 nm, 976 nm, 650 nm, 532 nm, and 2200 nm. The results showed that the device has excellent ultra wide spectral response capability.
Figure 3(a) shows the temporal light response of the 1T'-MoTe2/2H-MoTe2 device under the irradiation of a 1310 nm laser source with a power density of 389 μW/mm2 at Vds=0 V. By controlling the periodic on-off of the light source, it can be observed that photocurrent is also periodically generated and annihilated. Figure 3(b) and 3(c) show the amplification of the regions where the current rises and falls over time. The rise time is defined as the time taken from 10% to 90% of the total photocurrent, and the fall time is defined as the time taken from 90% to 10% of the total photocurrent. These values should be less than 10.56 ms and less than 6.26 ms, respectively. Due to the limitation of the device's time resolution, there are few adjacent time data points, and the rise and fall times may be smaller than the measured values. In 1T'-MoTe2/2H-MoTe2 devices, effective generation, separation, and recombination of electron hole pairs have been achieved. In addition, the photocurrent response of the device under 1310 nm laser with different power densities was tested without any bias voltage, as shown in Fig. 3(d). As the power density increased from 389 μW/mm2 to 1343 μW/mm2, the photocurrent increased from 0.5 nA to 3.5 nA. Figure 3(e) and 3(f) show the time current response curves of the device under 1 V and –1 V bias voltages for a 1310 nm laser at a power density of 389 μW/mm2, respectively. Under the same power density, the photocurrent of the device significantly increased after applying bias voltage, and the photocurrent at 1 V was even larger. In order to explore the stable light response capability of the device, 650 nm laser and 532 nm laser stable switches were vertically irradiated on the device. Without applying bias voltage to the device, hundreds of light switch cycles were carried out, as shown in Fig. S8. The results showed that the device had stable periodic generation and annihilation of photocurrent under hundreds of switch cycles, indicating that the device had stable light switch response. Figure S9 displays the transient photocurrent response of the device under 532 nm laser illumination at driving frequencies of 1, 5, 10, and 100 Hz. The results demonstrate that the device generates clear and stable on/off photoresponse waveforms across all tested frequencies, indicating excellent speed characteristics and response stability. Furthermore, as shown in Fig. S10, the device exhibited stable on/off switching characteristics in its transient response under 532 nm pulsed laser illumination at a bias voltage of ±1 V.
3.3　Polarized light detection of 1T'-MoTe2/2H-MoTe2 heterojunction
In order to study the anisotropy of 1T'-MoTe2, angle resolved polarization Raman spectroscopy (ARPRS) was used. The polarizer was rotated at an angle step of 30°, and the polarizer changed from 0° to 360°. The corresponding color images are shown in Fig. 4(a). The results show that the peak intensities at positions such as 108 cm−1, 160 cm−1, and 257 cm−1 vary periodically with the polarization angle, with a period of 180°. The peak intensity of Ag mode at 160 cm−1 with angle variation was fitted, as shown in Fig. 4(b), and this data can be well fitted using Eq. (1)32:
$ \begin{split} I\left({{\mathrm{A}}}_{{\mathrm{g}}}\right)\propto &{\left({\cos }^{2}\left(\beta \right)+\frac{a}{b}\cdot {\sin }^{2}\left(\beta \right)\cdot \cos \left({\varphi }_{ab}\right)\right)}^{2}\\&+ {\sin }^{2}\left(\beta \right){\sin }^{2}\left({\varphi }_{ab}\right)\;.\end{split} $
Among them, β is the angle of linearly polarized light, a and b are the minimum and maximum fitting parameters, respectively, and $ {\varphi }_{ab} $ is the phase difference between the a and b values in the Ag mode Raman tensor.
To verify the polarization detection capability of the device, a single point laser was converted into linearly polarized light through a polarizer, vertically irradiated onto the device, and the angle of the polarized light was changed by rotating the polarizer in steps of 30°. The schematic diagram of the testing system is shown in Fig. 4(c). The single point laser selected three wavelengths of 650 nm, 976 nm, and 1310 nm for testing, as shown in Fig. 4(d–f), where Vds=0 V. The measured photocurrent data can be well fitted by Eq. (2)32:
$ b\left(\beta \right)={b}_{\min }{\sin }^{2}\left(\beta +\varphi \right)+{b}_{\max }{\cos }^{2}\left(\beta +\varphi \right)\;.$
In the equation, β is the angle of linearly polarized light, and bmin and bmax are the minimum and maximum fitting parameters, respectively. The results indicate that the amplitude of the photocurrent of the device varies periodically with the polarization angle at laser wavelengths of 650 nm, 976 nm, and 1310 nm. The light response has strong polarization sensitivity and a period of 180º, which is consistent with the periodicity of the Raman spectrum measured in Fig. 4(a). The anisotropy ratio of photocurrent in the device (defined as the ratio of max (Iph) to min (Iph)) is 2.18, 4.75, and 20.1 at 650 nm, 976 nm, and 1310 nm laser wavelengths, respectively, indicating that the device has excellent performance in detecting polarized light. The high anisotropy ratio stems from the intrinsic anisotropic band structure of 1T'-MoTe2 and is significantly enhanced by carrier injection at the device level. The phenomenon of increasing polarization anisotropy ratio with longer wavelengths is primarily attributed to the energy-dependent variation in optical absorption locations within the heterostructure and the intrinsic anisotropy differences among constituent material layers. At shorter wavelengths (e.g., 650 nm), high-energy photons are strongly absorbed by the 2H-MoTe2 layer. With its in-plane isotropic hexagonal crystal structure, 2H-MoTe2 generates photo generated carriers that are separated by the built-in electric field in the junction region, creating a strong polarization-independent isotropic photocurrent background. Although the 1T'-MoTe2 layer simultaneously absorbs light and produces anisotropic photocurrent, its contribution becomes "submerged" by this dominant isotropic background from the 2H-MoTe2 layer, resulting in a relatively low overall anisotropy ratio. As the wavelength shifts toward the near-infrared regime, the photon energy gradually drops below the bandgap of 2H-MoTe2, leading to a sharp decline in its absorption coefficient. Consequently, the isotropic photocurrent background becomes significantly attenuated. Meanwhile, the zero-bandgap characteristic of semimetallic 1T'-MoTe2 enables efficient absorption of these longer-wavelength photons. The low-symmetry monoclinic crystal structure of 1T'-MoTe2 confers strong in-plane anisotropy to its optical conductivity. Variations in the angle between incident light polarization and its crystal axes induce substantial modulations in both optical absorption efficiency and resultant photocurrent. At longer wavelengths, this mechanism dominates photocurrent generation, causing the overall device response to be governed entirely by the intrinsic anisotropy of 1T'-MoTe2 and demonstrating significantly enhanced anisotropy ratios.
3.4　1T'-MoTe2/2H-MoTe2 heterojunction polarization imaging
The impressive responsivity and polarization photosensitivity of 1T'-MoTe2/2H-MoTe2 devices have prompted further research on their potential practical applications in broadband and polarization sensitive imaging. Figure 5 shows a schematic diagram of a broadband imaging system, in which a shadow mask plate with a hollow "I" pattern is installed on a 2D mobile platform and located between the heterojunction device and the light source. This allows the mask to move continuously in the X-Y direction. When light is blocked by a mask, it cannot reach the device and generate photocurrent. However, when light passes through the hollow pattern of the mask, it illuminates the device, causing the generation of photocurrent, which is then recorded in real time by a semiconductor analyzer. The position resolved photocurrent is transmitted to the computer and converted into a 2D comparison map of photocurrent values, effectively reproducing the patterns present in the mask.
Subsequently, Fig. 6(a–d) show the "I" imaging images obtained at polarization angles using light sources with wavelengths ranging from 532 nm to 976 nm. It is worth noting that the heterostructure device accurately captures the "I" pattern at all excitation wavelengths, with clear and distinct boundaries between the pattern and the background, demonstrating the broadband polarization imaging capability of the 1T'-MoTe2/2H-MoTe2 device. It should be emphasized that the effective imaging window of heterostructure devices (532–976 nm) significantly exceeds human vision, bringing interesting prospects for future visual systems.
Table 1 compares the characteristics of this heterojunction device with other previously reported vdW heterojunction photodetectors based on MoTe2 material. The 1T'-MoTe2/2H-MoTe2 heterojunction device exhibits excellent, competitive, and comprehensive self powered photodetection capabilities, as well as outstanding detection performance in polarized light detection. It has great potential for application in future polarized imaging near-infrared detectors.
4　Conclusions
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In summary, we have developed a near-infrared polarization sensitive photodetector based on 1T'-MoTe2/2H-MoTe2 vdW heterojunction for multi band detection. The response band is in the wide spectral range of 532–2200 nm, and it has high light detection performance. The device has a high responsivity of 3.06 A·W−1 at 1310 nm, a high specific detectivity of 3.2 × 109 Jones, a high EQE of 289%, and fast rise and fall response times of 10.56 ms/6.26 ms. And further detection was conducted on the polarization sensitivity of the heterojunction in a wide spectral range (650–1310 nm), with a polarization sensitivity of 2.18 at 650 nm and 20.1 at 1310 nm. In addition, the device also demonstrates ultra wideband and polarized light imaging capabilities, making it competitive among the most advanced 2D material based devices and commercial products. This study developed a narrow bandgap vdW heterojunction consisting of an in-plane anisotropic 1T'-MoTe2 layer and an isotropic 2H-MoTe2 layer. This structure provides a new strategy for achieving wide spectrum, fast response, and high polarization sensitivity near-infrared imaging in optoelectronic devices, and provides a reliable basis for developing next-generation two-dimensional imaging electronic and optoelectronic devices.
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Year 2026 volume 9 Issue 3
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Article Info
doi: 10.29026/oea.2026.250260
  • Receive Date：2025-09-26
  • Online Date：2026-10-19
  • Published：2026-03-25
Article Data
Affiliations
History
  • Received：2025-09-26
  • Accepted：2025-12-16
Affiliations
    1School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China
    2Department of Precision Instruments, Tsinghua University, Beijing 100084, China
    3School of Opto-electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
    4School of Precision Instruments and Optoelectronic Engineering, Tianjin University, Tianjin 300072, China
    5School of Engineering, RMIT University, Melbourne 3000, Australia

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LD Lu, E-mail:
JZ Ou, E-mail:
ML Dong, E-mail:
Z You, E-mail:
LQ Zhu, E-mail:
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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