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Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond
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Weijian LI, Ning CHEN, Hongwei WANG, Hao WANG, Shixiu ZHAO, Yilong PAN
Chinese Journal of High Pressure Physics | 2026, 40(9) : 090110-1 - 090110-12
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Chinese Journal of High Pressure Physics | 2026, 40(9): 090110-1-090110-12
• Carbon under High Pressure •
Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond
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Weijian LI, Ning CHEN, Hongwei WANG, Hao WANG, Shixiu ZHAO, Yilong PAN
Affiliations
  • Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, China
Published: 2026-09-05 doi: 10.11858/gywlxb.20261106
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Formation of nitrogen-vacancy (NV) centers and their apparent charge-state response in high-pressure high-temperature (HPHT) type-Ⅰb diamond were investigated. Effects of the initial substitutional nitrogen content (C-center nitrogen), electron irradiation, vacuum annealing, and HPHT pretreatment on the photoluminescence (PL) behavior of NV centers were compared. Two groups of HPHT diamond single crystals with different C-center nitrogen contents were subjected to electron irradiation, vacuum annealing (600−1000 ℃), and HPHT pretreatment (5 GPa, 1100−1900 ℃). Fourier-transform infrared spectroscopy (FTIR), Raman spectroscopy, and photoluminescence spectroscopy were employed to analyze nitrogen aggregation, lattice state, and NV-related photoluminescence responses. The results show that high-nitrogen samples exhibit more pronounced NV-related emission, whereas irradiation-induced vacancies in the low-nitrogen samples tend to remain as GR1 centers. As the vacuum annealing temperature increases, the overall emission intensities of NV0 and NV− increase, while the apparent photoluminescence response of NV− relative to NV0 generally decreases. HPHT pretreatment does not directly generate a large number of NV centers but promotes nitrogen aggregation and modifies the apparent NV−/NV0 charge-state ratio during subsequent irradiation and annealing. These results indicate that HPHT pretreatment can serve as a preceding processing parameter for regulating the initial defect state before irradiation and the subsequent apparent charge-state ratio of NV centers.

diamond  /  nitrogen-vacancy (NV) center  /  electron irradiation  /  vacuum annealing  /  high-pressure high-temperature
李玮健, 陈宁, 王宏伟, 王浩, 赵仕修, 潘益龙. 高温高压预处理诱导的氮聚集及其对金刚石NV色心表观电荷态比的影响. 高压物理学报, 2026 , 40 (9) : 090110-1 -090110-12 . DOI: 10.11858/gywlxb.20261106
Weijian LI, Ning CHEN, Hongwei WANG, Hao WANG, Shixiu ZHAO, Yilong PAN. Nitrogen Aggregation Induced by High-Pressure High-Temperature Pretreatment and Its Effect on the Apparent Charge-State Ratio of NV Centers in Diamond[J]. Chinese Journal of High Pressure Physics, 2026 , 40 (9) : 090110-1 -090110-12 . DOI: 10.11858/gywlxb.20261106
Year 2026 volume 40 Issue 9
13
6
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Article Info
doi: 10.11858/gywlxb.20261106
  • Receive Date:2026-05-27
  • Online Date:2026-11-05
  • Published:2026-09-05
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  • Received:2026-05-27
  • Revised:2026-06-26
Affiliations
    Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211, Zhejiang, China
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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