收藏切换
Electrical Conductivity Measurement of β-Boron under High Temperature and High Pressure
收藏切换
Dong-Mei ZHANG1, Chun-Xiao GAO1, Xiao-Wei HUANG1, Ming LI1, Chun-Yuan HE1, Ai-Min HAO1, Cui-Ling YU1, Xiao-Yan CUI1, Yan-Chun LI2
Chinese Journal of High Pressure Physics | 2008, 22(1) : 25 - 29
Less
收藏切换
Chinese Journal of High Pressure Physics | 2008, 22(1): 25-29
Electrical Conductivity Measurement of β-Boron under High Temperature and High Pressure
Full
Dong-Mei ZHANG1, Chun-Xiao GAO1, Xiao-Wei HUANG1, Ming LI1, Chun-Yuan HE1, Ai-Min HAO1, Cui-Ling YU1, Xiao-Yan CUI1, Yan-Chun LI2
Affiliations
  • 1.National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • 2.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China
Published: 2008-03-05
Outline
收藏切换

Boron possesses very complex structures and various physical characteristics under high pressure, which always attracts much attention in the field of theory and experiment. In-situ electrical conductivity measurement under variable pressure and temperature conditions is a very important research into exploring conductive property of substance. Electrical conductivity of β-B was measured with metallic microcircuit fabricated on the diamond anvil cell (DAC), and the conductive physical mechanism of β-boron at high pressure and high temperature was analyzed. When sample was not heated, electrical conductivity of boron was rising with increasing pressure to 28 GPa; furthermore, we found that it almost recovers original state upon decompression. When temperature is changed from room temperature to 423 K, electrical conductivity begins to rise with increasing temperature, and the change rate becomes gradually high and the change trend of electrical conductivity is similar to that under different pressures in the same temperature range. Subsequently, laser-heating was performed on β-B with designed DAC, Al2O3 thin film was deposited on the diamond anvil and used as heat resistant and electrical insulating layer. Electrical conductivity was separately measured at 14.5 GPa and 18.6 GPa. The highest temperature reached is 2 224 K. β-boron is confirmed semiconductor property based on electrical conductivity increasing with elevated temperature.

high temperature and high pressure  /  β-boron  /  electrical conductivity
张东梅, 高春晓, 黄晓伟, 李明, 贺春元, 郝爱民, 于翠玲, 崔晓岩, 李延春. 高温高压下β相硼的电导率测量. 高压物理学报, 2008 , 22 (1) : 25 -29 .
Dong-Mei ZHANG, Chun-Xiao GAO, Xiao-Wei HUANG, Ming LI, Chun-Yuan HE, Ai-Min HAO, Cui-Ling YU, Xiao-Yan CUI, Yan-Chun LI. Electrical Conductivity Measurement of β-Boron under High Temperature and High Pressure[J]. Chinese Journal of High Pressure Physics, 2008 , 22 (1) : 25 -29 .
Year 2008 volume 22 Issue 1
24
4
Cite this Article
BibTeX
Article Info
  • Receive Date:2007-02-02
  • Online Date:2026-11-01
  • Published:2008-03-05
Article Data
Affiliations
History
  • Received:2007-02-02
  • Revised:2007-05-28
Funding
Affiliations
    1.National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
    2.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China
References
Share
https://castjournals.cast.org.cn/joweb/gywlxb/EN/
Share to
QR

Scan QR to access full text

Cite this article
BibTeX
Citations
表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
关闭全屏
  • BibTeX
  • EndNote
  • RefWorks
  • TxT