Experimental results showed that the Me3C (Me means Fe, Ni) pattern carbides produced by the action of catalyst and graphite are main carbon source to form diamond structure under high temperature and high pressure (HPHT). In this paper, based on the empirical electron theory of solids and molecules (EET), the valence electron structure (VES) and interface structure factors of diamond and various carbides are calculated, and the boundary condition of Thomas-Fermi-Dirac-Cheng (TFDC) is applied to the carbide/diamond interfaces. It is found that the electron density of crystal face in Me3C formed by C—C bonds is continuous with that of diamond at the first order of approximation, but the continuous intensity of different carbide is different. The VES of plane composed of C atoms in (FeNi)3C and Co3C are more similar to that of diamond, so the energy needed to transform their C—C bonds to diamond structure is lower. The catalyst action and catalysis mechanism are explained on the basis of VES concerning the carbides and diamond. This method may be a new way to investigate the mechanism concerning diamond formation.
| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |