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Effects of W Diffusion Barrier Layer for Diamond Coatings Deposited on WC-Co Substrates
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Chuan-Xin WANG1, 2, Jian-Hua WANG1, Wei-Dong MAN1, 2, Zhi-Bin MA1, Sheng-Gao WANG1, Zhi-Cheng KANG2
Chinese Journal of High Pressure Physics | 2004, 18(1) : 83 - 89
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Chinese Journal of High Pressure Physics | 2004, 18(1): 83-89
• Research Note •
Effects of W Diffusion Barrier Layer for Diamond Coatings Deposited on WC-Co Substrates
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Chuan-Xin WANG1, 2, Jian-Hua WANG1, Wei-Dong MAN1, 2, Zhi-Bin MA1, Sheng-Gao WANG1, Zhi-Cheng KANG2
Affiliations
  • 1.Province Key Laboratory of Plasma Chemical & Advanced Materials, Wuhan Institute of Chemical Technology, Wuhan 430073, China
  • 2.Institute of Plasma Physics the Chinese Academy of Sciences, Hefei 230031, China
Published: 2004-03-05
Outline
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Two different W interlay/substrate bonding interfaces for the adhesion of diamond film deposited on WC-Co substrate were investigated using bias enhancing nucleation method, in microwave plasma enhanced chemical vapor deposition (MWCVD) device. The results indicate that hydrogen plasma decarburization, W interlayer sputtering, recarburization with negative biasing induce chemical reaction bonding interface formed between the W interlayer and the substrate. Recarburized W interlayer in the initial diamond deposition strongly adhere to WC grains on the surface of WC-Co substrate, and consequently improved the adhesion of diamond film on WC-Co substrate. This pretreatment improved the adhesion of diamond film more obvious, compared with sputtering W interlayer directly on the substrate, in which physical bonding interlayer formed. Carburization with high negative biasing can improve the roughness of the substrate surface, and consequently improve the effect of mechanical interlock. The nucleation density was increased by negative biasing and therefore improved the contact area between the diamond film and the substrate, consequently improved the adhesion of diamond film on WC-Co substrate.

diamond coatings  /  adhesion  /  cemented carbide  /  WC diffusion barriers
王传新, 汪建华, 满卫东, 马志斌, 王升高, 康志成. W过渡层结合界面对金刚石薄膜在WC-6%Co上的附着力的影响. 高压物理学报, 2004 , 18 (1) : 83 -89 .
Chuan-Xin WANG, Jian-Hua WANG, Wei-Dong MAN, Zhi-Bin MA, Sheng-Gao WANG, Zhi-Cheng KANG. Effects of W Diffusion Barrier Layer for Diamond Coatings Deposited on WC-Co Substrates[J]. Chinese Journal of High Pressure Physics, 2004 , 18 (1) : 83 -89 .
Year 2004 volume 18 Issue 1
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  • Receive Date:2003-03-27
  • Online Date:2026-10-31
  • Published:2004-03-05
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  • Received:2003-03-27
  • Revised:2003-10-15
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Affiliations
    1.Province Key Laboratory of Plasma Chemical & Advanced Materials, Wuhan Institute of Chemical Technology, Wuhan 430073, China
    2.Institute of Plasma Physics the Chinese Academy of Sciences, Hefei 230031, China
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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