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Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure
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Haobo ZHANG, Meihua HU, Shangsheng LI, Di LIU, Shasha HE, Xiaoxiao LI, Zhenyang WANG
Chinese Journal of High Pressure Physics | 2026, 40(9) : 090113-1 - 090113-9
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Chinese Journal of High Pressure Physics | 2026, 40(9): 090113-1-090113-9
• Carbon under High Pressure •
Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure
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Haobo ZHANG, Meihua HU, Shangsheng LI, Di LIU, Shasha HE, Xiaoxiao LI, Zhenyang WANG
Affiliations
  • School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, Henan, China
Published: 2026-09-05 doi: 10.11858/gywlxb.20251285
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To investigate the effects of phosphorus doping on diamond crystal growth, diamond single crystals doped with phosphorus were synthesized along the (111) plane using the temperature gradient method. The experiments were conducted under conditions of 5.5 GPa and 1 300 ℃, with Fe3P added into the FeNiCo-C system. The synthesized diamond samples were characterized by Fourier-transform infrared (FTIR) spectroscopy, Raman spectroscopy, photoluminescence (PL) spectroscopy, and X-ray photoelectron spectroscopy (XPS). With increasing Fe3P addition, the diamond color gradually lightens, and the crystal morphology changes from octahedral to hexoctahedral. Moreover, the addition of Fe3P alters the catalyst properties, leading to the increases of nitrogen solubility of the catalyst. Thus, fewer nitrogen atoms enter the diamond lattice, resulting in a decrease of nitrogen impurity content in the diamonds. Phosphorus doping increases internal stress and induces lattice distortion in the diamond crystal, resulting in degrading of the diamond quality. This conclusion is supported by the shift and broadening of the Raman peak. The incorporation of phosphorus atoms inhibits the formation of NV− centers in diamond crystals. XPS results confirm the successful incorporation of phosphorus into the diamond lattice. This study provides useful insights for understanding the synthesis mechanism of phosphorus-doped diamond crystals, and supports potential applications of phosphorus-doped diamond crystals.

high-temperature and high-pressure  /  diamond single crystal  /  superhard materials  /  phosphorus doping  /  n-type semiconductor
张浩波, 胡美华, 李尚升, 刘迪, 和莎莎, 李晓晓, 王振阳. 高温高压下FeNiCo-C体系中磷掺金刚石的合成与表征. 高压物理学报, 2026 , 40 (9) : 090113-1 -090113-9 . DOI: 10.11858/gywlxb.20251285
Haobo ZHANG, Meihua HU, Shangsheng LI, Di LIU, Shasha HE, Xiaoxiao LI, Zhenyang WANG. Synthesis and Characterization of P-Doped Diamond Crystals in the FeNiCo-C System under High Temperature and High Pressure[J]. Chinese Journal of High Pressure Physics, 2026 , 40 (9) : 090113-1 -090113-9 . DOI: 10.11858/gywlxb.20251285
Year 2026 volume 40 Issue 9
14
6
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Article Info
doi: 10.11858/gywlxb.20251285
  • Receive Date:2025-12-26
  • Online Date:2026-11-05
  • Published:2026-09-05
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  • Received:2025-12-26
  • Revised:2026-02-08
  • Accepted:2026-07-14
Affiliations
    School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, Henan, China
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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