A SiC Epitaxial Growth Doping Concentration Prediction Model Based on Multi-Scale Feature Enhancement and Temporal Transformer
1.The 13th Research Institute, CETC, Shijiazhuang 050051, China
2.Hebei Province Semiconductor Intelligent Manufacturing Innovation Center, Shijiazhuang 050051, China
3.Shijiazhuang Key Laboratory of Semiconductor Artificial Intelligence Technology, Shijiazhuang 050051, China
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ZHANG Zhongyi (2000-), male, Assistant Engineer. E-mail: 2841622099@qq.com
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WANG Lang (1989-), male, Engineer. E-mail:wangl170326@163.com
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