Recent Progress on Solvents for Growth of 4H-SiC Single Crystals by High-Temperature Solution Growth Technique
1.Key Laboratory of Metallurgical Emission Reduction & Resources Recycling, Ministry of Education, Anhui University of Technology, Maanshan 243002, Anhui, China
2.School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
3.Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084, China
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DING Xiang (1986-), male, Ph.D., Lecturer. E-mail: ustbdx@126.com
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