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Effect of Nano-sized Oxide Layer at Ge/Si Heterogeneous Bonded Interface on Regulatory Mechanism of Photoelectric Characteristics of Ge/Si Heterojunction
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Qiang PENG1, Haipeng KE2, Xinglian LI1, Xin LIN1, Shaoying KE1, Jinrong ZHOU1
Journal of the Chinese Ceramic Society | 2021, 49(1) : 180 - 188
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Journal of the Chinese Ceramic Society | 2021, 49(1): 180-188
• Research Article •
Effect of Nano-sized Oxide Layer at Ge/Si Heterogeneous Bonded Interface on Regulatory Mechanism of Photoelectric Characteristics of Ge/Si Heterojunction
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Qiang PENG1, Haipeng KE2, Xinglian LI1, Xin LIN1, Shaoying KE1, Jinrong ZHOU1
Affiliations
  • 1.College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, Fujian, China
  • 2.Zhangzhou First Vocational Secondary School, Zhangzhou 363000, Fujian, China
  • PENG Qiang (1997-), male, Undergraduate. E-mail:

About Author:

PENG Qiang (1997-), male, Undergraduate. E-mail:

Published: 2021-01-20 doi: 10.14062/j.issn.0454-5648.20200325
Outline
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The threading dislocation density (TDD) in Si-based Ge films prepared via the epitaxial growth is rather high due to 4.2% lattice mismatch between Si and Ge, leading to a large dark current of the device. However, the low-temperature Ge/Si wafer bonding can lower the TDD in Ge film by restraining the propagation of the misfit dislocations, exhibiting an enormous potential in the fabrication of high-quality large-misfit film. The oxide layer at Ge/Si bonded interface produced via hydrophilic reaction could affect the performance of Ge/Si heterojunction. In this work, a carrier non-local quantum tunneling model was proposed at Ge/Si bonded interface based on the carrier basic equation. The effect of the oxide layer thickness (dO) at Ge/Si bonded interface on the dark current, total current, spectrum response, and bandwidth was investigated and the influencing mechanism of heterojunction performance was clarified by the introduction of the semi-classical approximate solution. It is indicated that the carrier blocking effect of the oxide layer becomes serious as the dO increases, leading to the decrease of the dark current, total current, and spectrum response. In addition, the dO in Ge layer decreases due to the increase of the electric field in the oxide layer, leading to the decrease of the carrier velocity and the high-frequency characteristic. In order to ensure the excellent photoelectric property of Ge/Si heterojunction, the dO should be limited to be <0.50 nm.

germanium/silicon heterogeneous bonding  /  lattice mismatch  /  interface oxide layer  /  electric field
彭强, 柯海鹏, 李杏莲, 林鑫, 柯少颖, 周锦荣. Ge/Si异质键合界面纳米级氧化层对Ge/Si异质结光电特性调控机制. 硅酸盐学报, 2021 , 49 (1) : 180 -188 . DOI: 10.14062/j.issn.0454-5648.20200325
Qiang PENG, Haipeng KE, Xinglian LI, Xin LIN, Shaoying KE, Jinrong ZHOU. Effect of Nano-sized Oxide Layer at Ge/Si Heterogeneous Bonded Interface on Regulatory Mechanism of Photoelectric Characteristics of Ge/Si Heterojunction[J]. Journal of the Chinese Ceramic Society, 2021 , 49 (1) : 180 -188 . DOI: 10.14062/j.issn.0454-5648.20200325
Year 2021 volume 49 Issue 1
23
9
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Article Info
doi: 10.14062/j.issn.0454-5648.20200325
  • Receive Date:2020-05-08
  • Online Date:2026-10-30
  • Published:2021-01-20
Article Data
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History
  • Received:2020-05-08
  • Revised:2020-06-23
Funding
Affiliations
    1.College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, Fujian, China
    2.Zhangzhou First Vocational Secondary School, Zhangzhou 363000, Fujian, China

Corresponding:

KE Shaoying (1989-), male, Ph.D., Associate Professor; E-mail:
ZHOU Jinrong (1974-), Master, Associate Professor.
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
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Percentage of
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Genus
种数
Number of
species
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Percentage of total
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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