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Effect of Chemical Action on Material Removal Behavior During AlN Crystal Lapping
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Chuanjin HUANG1, Bin GU2, Hai ZHOU1, Wei FENG1
Journal of the Chinese Ceramic Society | 2022, 50(9) : 2470 - 2476
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Journal of the Chinese Ceramic Society | 2022, 50(9): 2470-2476
• Research Articles •
Effect of Chemical Action on Material Removal Behavior During AlN Crystal Lapping
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Chuanjin HUANG1, Bin GU2, Hai ZHOU1, Wei FENG1
Affiliations
  • 1.College of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, Jiangsu, China
  • 2.Nasurfar Biomaterial Technology Co., Ltd, Changshu, 215500, Jiangsu, China

    • HUANG Chuanjin (1982-), male, Ph.D., Lecturer. E-mail:

About Author:

HUANG Chuanjin (1982-), male, Ph.D., Lecturer. E-mail:

Published: 2022-09-20 doi: 10.14062/j.issn.0454-5648.20220092
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AlN crystal is a typical brittle and difficult-to-process material. To prepare AlN crystal substrates with a high efficiency and a high quality, slurries with different chemical compositions were designed to lap AlN crystals, and the mechanism of chemical action-assisted material removal was investigated by laser confocal microscopy and X-ray photoelectron spectroscopy. The results show that the alkaline slurry is beneficial to obtaining the optimum lapping results, the material removal rate is 23 μm/h, and the surface roughness (Ra) is 122 nm. The diamond abrasive particles in the slurry have a good dispersibility in alkaline environment. The alkaline solution can corrode the crystal surface, form a metamorphic layer containing basic aluminum salts, and cause some changes in the surface morphology. In the lapping interface, the metamorphic layer produced by chemical etching on the surface of AlN crystal is more conducive to the mechanical removal of abrasive particles, which can lay a foundation for improving the lapping efficiency and quality. The result obtained can provide a reference for optimizing the ultra-precision processing technology of AlN crystals.

aluminum nitride single crystal  /  lapping  /  etching  /  metamorphic layer
黄传锦, 顾斌, 周海, 冯伟. 化学作用对AlN晶体研磨过程中材料去除行为的影响. 硅酸盐学报, 2022 , 50 (9) : 2470 -2476 . DOI: 10.14062/j.issn.0454-5648.20220092
Chuanjin HUANG, Bin GU, Hai ZHOU, Wei FENG. Effect of Chemical Action on Material Removal Behavior During AlN Crystal Lapping[J]. Journal of the Chinese Ceramic Society, 2022 , 50 (9) : 2470 -2476 . DOI: 10.14062/j.issn.0454-5648.20220092
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Year 2022 volume 50 Issue 9
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Article Info
doi: 10.14062/j.issn.0454-5648.20220092
  • Receive Date：2022-01-30
  • Online Date：2026-10-20
  • Published：2022-09-20
Article Data
Affiliations
History
  • Received：2022-01-30
  • Revised：2022-03-12
Funding
Affiliations
    1.College of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, Jiangsu, China
    2.Nasurfar Biomaterial Technology Co., Ltd, Changshu, 215500, Jiangsu, China

Corresponding:

ZHOU Hai (1965-), male, Ph.D., Professor. E-mail:
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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