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Research Progress on AlN Single Crystal Growth on SiC Substrate by Physical Vapor Transport Method
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Yajun ZHU, Guodong WANG, Ruixian YU, Wenhao CAO, Shouzhi WANG, Xiaobo HU, Xiangang XU, Lei ZHANG
Journal of the Chinese Ceramic Society | 2023, 51(6) : 1439 - 1449
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Journal of the Chinese Ceramic Society | 2023, 51(6): 1439-1449
• Review •
Research Progress on AlN Single Crystal Growth on SiC Substrate by Physical Vapor Transport Method
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Yajun ZHU, Guodong WANG, Ruixian YU, Wenhao CAO, Shouzhi WANG, Xiaobo HU, Xiangang XU, Lei ZHANG
Affiliations
  • Shandong University, Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Jinan 250100, China

    • ZHU Yajun (1997-), male, Doctoral Candidate. E-mail:

About Author:

ZHU Yajun (1997-), male, Doctoral Candidate. E-mail:

Published: 2023-06-20 doi: 10.14062/j.issn.0454-5648.20220704
Outline
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Aluminum nitride (AlN) is a direct bandgap semiconductor with a ultrawide bandgap width (i.e., 6.2 eV), a high thermal conductivity (i.e., 3.4 W/(cm·K)), a high surface acoustic rate (i.e., VL=10.97×105 cm/s, VT=6.2×105 cm/s), a high breakdown field strength as well as stable physical and chemical properties. AIN is an ideal substrate for ultraviolet/deep ultraviolet (DUV) luminescent materials. AlxGa1-xN materials made from AlN can achieve a continuous luminescence in a wavelength range of 200-365 nm. AlN crystal as one of developed semiconductor materials with a great potential can be used for high voltage, high temperature and high frequency electronic devices. This review introduced the heteroepitaxial growth principle of AlN single crystal by a physical vapor transport (PVT) method. Recent research progress on the heteroepitaxial growth of AlN on silicon carbide (SiC) substrate was represented based on the corresponding studies on the AlN growth on SiC substrates and the growth of AlN crystals on AlN/SiC substrates and off-orientation SiC substrates. Some challenges and opportunities of growing AlN single crystal on SiC substrate were briefly described, and the future development of AlN materials was prospected as well.

aluminum nitride single crystal  /  silicon carbide substrate  /  physical phase transport  /  heteroepitaxy
朱亚军, 王国栋, 俞瑞仙, 曹文豪, 王守志, 胡小波, 徐现刚, 张雷. 物理气相传输法SiC衬底上生长AlN单晶的研究进展. 硅酸盐学报, 2023 , 51 (6) : 1439 -1449 . DOI: 10.14062/j.issn.0454-5648.20220704
Yajun ZHU, Guodong WANG, Ruixian YU, Wenhao CAO, Shouzhi WANG, Xiaobo HU, Xiangang XU, Lei ZHANG. Research Progress on AlN Single Crystal Growth on SiC Substrate by Physical Vapor Transport Method[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (6) : 1439 -1449 . DOI: 10.14062/j.issn.0454-5648.20220704
Appendix
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Year 2023 volume 51 Issue 6
33
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Article Info
doi: 10.14062/j.issn.0454-5648.20220704
  • Receive Date：2022-08-29
  • Online Date：2026-10-20
  • Published：2023-06-20
Article Data
Affiliations
History
  • Received：2022-08-29
  • Revised：2022-10-30
Funding
Affiliations
    Shandong University, Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Jinan 250100, China

Corresponding:

WANG Guodong (1991-), male, Associate Professor. E-mail:
ZHANG Lei (1982-), male, Professor.
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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