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Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation
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Hui SUN1, Longhai SHEN1, Zitong LIU1, 2, Jianjin CHEN1, Ruixin ZHANG1, Jia CHENG1, Xinglai ZHANG2
Journal of the Chinese Ceramic Society | 2023, 51(1) : 145 - 151
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Journal of the Chinese Ceramic Society | 2023, 51(1): 145-151
• Research Articles •
Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation
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Hui SUN1, Longhai SHEN1, Zitong LIU1, 2, Jianjin CHEN1, Ruixin ZHANG1, Jia CHENG1, Xinglai ZHANG2
Affiliations
  • 1.School of Science, Shenyang Ligong University, Shenyang 110159, China
  • 2.Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

    • SUN Hui (1997-), male, Master candidate. E-mail:

About Author:

SUN Hui (1997-), male, Master candidate. E-mail:

Published: 2023-01-20 doi: 10.14062/j.issn.0454-5648.20220468
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In this work, for exploring the controlled growth strategy of indium-oxide-based semiconductor film with preferred orientation and investigating the effect of crystal orientation on the photoelectric property, nitrogen-doped indium oxide (In2O3:N) films with (222) and (440) preferred orientation were prepared on quartz (SiO2) substrate by magnetron sputtering, respectively. The crystal structure, surface morphology, elemental composition and optical bandgap of In2O3:N films were characterized by X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy and ultraviolet-visible spectrophotometer, respectively. The photoelectric properties of as-grown films with different preferred orientation were investigated. The results show that the nitrogen doping in In2O3:N films with different preferred orientation mainly is dominated by nitrogen substitutional oxygen. The band gap of indium oxide can be reduced to 2.89 eV by nitrogen doping. The In2O3:N film with (440) preferred orientation has a shorter photoresponse time than the (222) one.

nitrogen-doped indium oxide  /  magnetron sputtering  /  preferred orientation  /  photoelectric detection
孙辉, 沈龙海, 刘子童, 陈建金, 张芮馨, 程佳, 张兴来. 择优取向氮掺杂氧化铟薄膜的制备及其光电性能. 硅酸盐学报, 2023 , 51 (1) : 145 -151 . DOI: 10.14062/j.issn.0454-5648.20220468
Hui SUN, Longhai SHEN, Zitong LIU, Jianjin CHEN, Ruixin ZHANG, Jia CHENG, Xinglai ZHANG. Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (1) : 145 -151 . DOI: 10.14062/j.issn.0454-5648.20220468
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Year 2023 volume 51 Issue 1
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Article Info
doi: 10.14062/j.issn.0454-5648.20220468
  • Receive Date：2022-06-13
  • Online Date：2026-10-20
  • Published：2023-01-20
Article Data
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History
  • Received：2022-06-13
  • Revised：2022-07-17
Funding
Affiliations
    1.School of Science, Shenyang Ligong University, Shenyang 110159, China
    2.Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

Corresponding:

SHEN Longhai (1977-), male, Ph.D., Professor. E-mail:
ZHANG Xinglai (1984-), male, Ph.D., Associate Professor.
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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