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Research Progress on Silicon-Terminated Diamond Semiconductors and Field-Effect Transistor Devices
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Jinlong LIU1, Zichen ZHAO1, Shangman ZHAO1, Xiaohua ZHU1, Peng WANG1, Jinrui GUO1, Mingming GUO2, Junjun WEI1, Liangxian CHEN1, Jianlin LI2, Chengming LI1
Journal of the Chinese Ceramic Society | 2023, 51(11) : 3005 - 3014
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Journal of the Chinese Ceramic Society | 2023, 51(11): 3005-3014
• Review •
Research Progress on Silicon-Terminated Diamond Semiconductors and Field-Effect Transistor Devices
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Jinlong LIU1, Zichen ZHAO1, Shangman ZHAO1, Xiaohua ZHU1, Peng WANG1, Jinrui GUO1, Mingming GUO2, Junjun WEI1, Liangxian CHEN1, Jianlin LI2, Chengming LI1
Affiliations
  • 1.Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
  • 2.Henan Famous Diamond Industrial Co., Ltd, Mengzhou 454763, Henan, China

    • LIU Jinlong (1985-), male, Ph.D., Professor. E-mail:

About Author:

LIU Jinlong (1985-), male, Ph.D., Professor. E-mail:

Published: 2023-08-14 doi: 10.14062/j.issn.0454-5648.20230381
Outline
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Diamond as a representative of ultra-wide bandgap semiconductor material has attracted recent attention. Although some progress is made in material preparation, device development and performance, semiconductor doping technology is not resolved so far. Hydrogen-terminated (C-H) diamond is widely used in microwave power devices due to its typical two-dimensional hole gas, but it has some problems such as poor stability and high interface state concentration. In contrast, silicon-terminated (C-Si) diamond that emerged in recent years has some advantages of lower interface state density, higher threshold voltage, carrier density, and stability rather than C-H diamond. C-Si diamond electronics exhibit the enhanced properties with high threshold voltages through an unclear mechanism. This review analyzed the structure and conduction mechanism of C-H diamond, the main problems that limit its development, represented the conduction mechanism, preparation method and corresponding interface structure of C-Si diamond, and discussed the performance level of C-Si diamond MOSFETs. In addition, the existing problems in the development of C-Si diamond were also discussed, and its future development was prospected.

silicon-terminated diamond  /  diamond semiconductor  /  field-effect transistor devices
刘金龙, 赵子辰, 赵上熳, 朱肖华, 王鹏, 郭津瑞, 郭明明, 魏俊俊, 陈良贤, 李建林, 李成明. 硅终端金刚石半导体与场效应管器件研究进展. 硅酸盐学报, 2023 , 51 (11) : 3005 -3014 . DOI: 10.14062/j.issn.0454-5648.20230381
Jinlong LIU, Zichen ZHAO, Shangman ZHAO, Xiaohua ZHU, Peng WANG, Jinrui GUO, Mingming GUO, Junjun WEI, Liangxian CHEN, Jianlin LI, Chengming LI. Research Progress on Silicon-Terminated Diamond Semiconductors and Field-Effect Transistor Devices[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (11) : 3005 -3014 . DOI: 10.14062/j.issn.0454-5648.20230381
Appendix
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Year 2023 volume 51 Issue 11
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Article Info
doi: 10.14062/j.issn.0454-5648.20230381
  • Receive Date：2023-06-01
  • Online Date：2026-10-19
  • Published：2023-08-14
Article Data
Affiliations
History
  • Received：2023-06-01
  • Revised：2023-06-17
Funding
Affiliations
    1.Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
    2.Henan Famous Diamond Industrial Co., Ltd, Mengzhou 454763, Henan, China

Corresponding:

LI Chengming (1962-), male, Ph.D., Professor. E-mail:
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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