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Ferroelectricity in Nd Doped HfO2 Films Grown by Molecular Beam Epitaxy
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Yuwei LIU1, Peijie JIAO1, Wei MAO1, Jiangfeng YANG1, Ningchong ZHENG1, Peng WANG2, Di WU1, Yuefeng NIE1
Journal of the Chinese Ceramic Society | 2023, 51(12) : 3039 - 3045
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Journal of the Chinese Ceramic Society | 2023, 51(12): 3039-3045
• Research Articles •
Ferroelectricity in Nd Doped HfO2 Films Grown by Molecular Beam Epitaxy
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Yuwei LIU1, Peijie JIAO1, Wei MAO1, Jiangfeng YANG1, Ningchong ZHENG1, Peng WANG2, Di WU1, Yuefeng NIE1
Affiliations
  • 1.Jiangsu Key Laboratory of Artificial Functional Materials, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
  • 2.Department of Physics, Univesity of Warwick, Coventry CV4 7AL, UK

    • LIU Yuwei (1998-), male, Master candidate. E-mail:

About Author:

LIU Yuwei (1998-), male, Master candidate. E-mail:

Published: 2023-09-11 doi: 10.14062/j.issn.0454-5648.20230159
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The application of doped HfO2 ferroelectric thin films in nonvolatile memory devices becomes popular in condensed matter physics and materials science. Recent studies indicate that La doped HfO2 has excellent ferroelectric properties, and the ferroelectric remanent polarization is 45 μC/cm2 as the maximum value reported. Nd doping is expected to enhance the ferroelectric properties of HfO2 due to its similar chemical properties of Nd and La, but little research has been reported. In this paper, high quality Nd-doped HfO2 (i.e., Nd∶HfO2) thin films were grown on La0.67Sr0.33MnO3 (bottom electrode)/SrTiO3 (001) substrates by using oxide molecular beam epitaxy. According to the results by X-ray diffraction and high-resolution electron microscopy, Nd doping can induce the transition of HfO2 from a monoclinic phase to an orthorhombic phase. In addition, the results by high resolution electron microscopy also show that Nd∶HfO2 has a tetragonal phase structure near the interface, connecting (111) crystalline Nd∶HfO2 and (001) crystalline perovskite oxide substrates. The systematic studies on epitaxial growth and ferroelectric properties of Nd∶HfO2 films can expand the research of doped HfO2.

hafnium oxide  /  ferroelectric  /  molecular beam epitaxy  /  doping
刘育玮, 矫佩杰, 茆伟, 杨江枫, 郑宁冲, 王鹏, 吴迪, 聂越峰. Nd掺杂HfO2薄膜的分子束外延制备及铁电性. 硅酸盐学报, 2023 , 51 (12) : 3039 -3045 . DOI: 10.14062/j.issn.0454-5648.20230159
Yuwei LIU, Peijie JIAO, Wei MAO, Jiangfeng YANG, Ningchong ZHENG, Peng WANG, Di WU, Yuefeng NIE. Ferroelectricity in Nd Doped HfO2 Films Grown by Molecular Beam Epitaxy[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (12) : 3039 -3045 . DOI: 10.14062/j.issn.0454-5648.20230159
Appendix
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Year 2023 volume 51 Issue 12
39
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Article Info
doi: 10.14062/j.issn.0454-5648.20230159
  • Receive Date：2023-03-15
  • Online Date：2026-10-19
  • Published：2023-09-11
Article Data
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History
  • Received：2023-03-15
  • Revised：2023-05-04
Funding
Affiliations
    1.Jiangsu Key Laboratory of Artificial Functional Materials, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
    2.Department of Physics, Univesity of Warwick, Coventry CV4 7AL, UK

Corresponding:

WANG Peng (1978-), male, Ph.D., Professor; E-mail:
WU Di (1974-), male, Ph.D., Professor;
NIE Yuefeng (1978-), male, Ph.D., Professor.
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表12种不同金属材料的力学参数
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Family		 属数
Number of
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Number of
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Percentage of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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