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Control of Defects in MPCVD Single Crystal Diamond Growth Based on Metal Catalyzed Plasma Etching
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Yicun LI, Dongyue WEN, Xiaobin HAO, Bing DAI, Benjian LIU, Jiaqi ZHU, Jiecai HAN
Journal of the Chinese Ceramic Society | 2023, 51(6) : 1374 - 1380
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Journal of the Chinese Ceramic Society | 2023, 51(6): 1374-1380
• Research Articles •
Control of Defects in MPCVD Single Crystal Diamond Growth Based on Metal Catalyzed Plasma Etching
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Yicun LI, Dongyue WEN, Xiaobin HAO, Bing DAI, Benjian LIU, Jiaqi ZHU, Jiecai HAN
Affiliations
  • National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China

    • LI Yicun (1996-), male, Doctoral candidate. E-mail:

About Author:

LI Yicun (1996-), male, Doctoral candidate. E-mail:

Published: 2023-06-20 doi: 10.14062/j.issn.0454-5648.20221029
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As one kind of semiconductor material with the superiorperformance, single crystal diamond (SCD) has broad application prospects in power devices, deep space exploration and other fields. However, SCD prepared via microwave plasma chemical vapor deposition (MPCVD) usually contains defects, especially dislocations, seriously restrictingits electrical performance. Lateral epitaxial growth as a common defect control method in semiconductor materialsis used in SCD preparation in recent years. In this work, firstly, a pattern array was constructed on SCD seed by metal catalyzed plasma etching to create a lateral growth condition for the preparation of homogeneous epitaxial. Secondly, SCD layer was prepared by MPCVD method, and the lateral epitaxial growth process was investigated. The samples were tested by laser confocal microscopy, polarizing microscopy, Raman spectroscopyand defect density measurement. The results show that this method can stably and controllably prepare the arrays needed for patterned growth and reduce the defect density of the growth layer.

microwave plasma chemical vapor deposition  /  single crystal diamond  /  lateral epitaxy  /  defect control
李一村, 文东岳, 郝晓斌, 代兵, 刘本建, 朱嘉琦, 韩杰才. 基于金属催化等离子体刻蚀的MPCVD单晶金刚石生长缺陷调控. 硅酸盐学报, 2023 , 51 (6) : 1374 -1380 . DOI: 10.14062/j.issn.0454-5648.20221029
Yicun LI, Dongyue WEN, Xiaobin HAO, Bing DAI, Benjian LIU, Jiaqi ZHU, Jiecai HAN. Control of Defects in MPCVD Single Crystal Diamond Growth Based on Metal Catalyzed Plasma Etching[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (6) : 1374 -1380 . DOI: 10.14062/j.issn.0454-5648.20221029
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Year 2023 volume 51 Issue 6
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Article Info
doi: 10.14062/j.issn.0454-5648.20221029
  • Receive Date：2022-11-28
  • Online Date：2026-10-20
  • Published：2023-06-20
Article Data
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History
  • Received：2022-11-28
  • Revised：2023-02-25
Funding
Affiliations
    National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China

Corresponding:

DAI Bing (1984-), male, Professor. E-mail:
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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