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Low Angle Grain Boundaries in β-Ga2O3 Crystal Grown by EFG Method
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Pei WANG1, Wenxiang MU1, Tong HOU1, Zhitai JIA1, 2, Xutang TAO1
Journal of the Chinese Ceramic Society | 2023, 51(6) : 1406 - 1411
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Journal of the Chinese Ceramic Society | 2023, 51(6): 1406-1411
• Research Articles •
Low Angle Grain Boundaries in β-Ga2O3 Crystal Grown by EFG Method
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Pei WANG1, Wenxiang MU1, Tong HOU1, Zhitai JIA1, 2, Xutang TAO1
Affiliations
  • 1.State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, China
  • 2.Shandong Research Institute of Industrial Technology, Jinan 250100, China

    • WANG Pei (1994-), female, Doctoral candidate. E-mail:

About Author:

WANG Pei (1994-), female, Doctoral candidate. E-mail:

Published: 2023-06-20 doi: 10.14062/j.issn.0454-5648.20220972
Outline
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β-Ga2O3 is one of the most promising ultrawide band-gap semiconductor materials, but its crystal defects are not investigated comprehensively. The low angle grain boundaries of β-Ga2O3 crystal mainly exists in (100) plane. The existence of low angle boundary can destroy the integrity of the crystal structure and reduce the quality of crystal. The macroscopic analysis and microstructure characterization of the low angle grain boundaries in the β-Ga2O3 crystal grown by edge-defined film-fed growth method were carried out by chemical etching analysis and transmission electron microscopy. The results show that the shape and orientation of the etch pits on both sides of the low angle grain boundary are consistent, and the misorientation angle of the low angle grain boundary is 3°. In addition, the low angle grain boundary can cause the double peaks and broadening in the X-ray rocking curve. The gap in the study of low angle grain boundary is filled based on the characterization of the microstructure of low angle grain boundary in β-Ga2O3 crystals.

edge-defined film-fed growth method  /  β-gallium oxide  /  low angle grain boundaries  /  rocking curve
王佩, 穆文祥, 侯童, 贾志泰, 陶绪堂. 导模法生长β-Ga2O3晶体中的小角晶界. 硅酸盐学报, 2023 , 51 (6) : 1406 -1411 . DOI: 10.14062/j.issn.0454-5648.20220972
Pei WANG, Wenxiang MU, Tong HOU, Zhitai JIA, Xutang TAO. Low Angle Grain Boundaries in β-Ga2O3 Crystal Grown by EFG Method[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (6) : 1406 -1411 . DOI: 10.14062/j.issn.0454-5648.20220972
Appendix
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Year 2023 volume 51 Issue 6
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Article Info
doi: 10.14062/j.issn.0454-5648.20220972
  • Receive Date：2022-11-11
  • Online Date：2026-10-20
  • Published：2023-06-20
Article Data
Affiliations
History
  • Received：2022-11-11
  • Revised：2022-12-02
Funding
Affiliations
    1.State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan 250100, China
    2.Shandong Research Institute of Industrial Technology, Jinan 250100, China

Corresponding:

MU Wenxiang (1989-), male, Ph.D., Associate Professor. E-mail:
JIA Zhitai (1981-), male, Ph.D., Professor.
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表12种不同金属材料的力学参数
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小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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