Home Journals Articles Updates About
CN
image
收藏切换
Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation
收藏切换
Hui SUN1, Longhai SHEN1, Zitong LIU1, 2, Jianjin CHEN1, Ruixin ZHANG1, Jia CHENG1, Xinglai ZHANG2
Journal of the Chinese Ceramic Society | 2023, 51(1) : 145 - 151
Less
收藏切换
Journal of the Chinese Ceramic Society | 2023, 51(1): 145-151
• Research Articles •
Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation
Full
Hui SUN1, Longhai SHEN1, Zitong LIU1, 2, Jianjin CHEN1, Ruixin ZHANG1, Jia CHENG1, Xinglai ZHANG2
Affiliations
  • 1.School of Science, Shenyang Ligong University, Shenyang 110159, China
  • 2.Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

    • SUN Hui (1997-), male, Master candidate. E-mail:

About Author:

SUN Hui (1997-), male, Master candidate. E-mail:

Published: 2023-01-20 doi: 10.14062/j.issn.0454-5648.20220468
Outline
收藏切换

In this work, for exploring the controlled growth strategy of indium-oxide-based semiconductor film with preferred orientation and investigating the effect of crystal orientation on the photoelectric property, nitrogen-doped indium oxide (In2O3:N) films with (222) and (440) preferred orientation were prepared on quartz (SiO2) substrate by magnetron sputtering, respectively. The crystal structure, surface morphology, elemental composition and optical bandgap of In2O3:N films were characterized by X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy and ultraviolet-visible spectrophotometer, respectively. The photoelectric properties of as-grown films with different preferred orientation were investigated. The results show that the nitrogen doping in In2O3:N films with different preferred orientation mainly is dominated by nitrogen substitutional oxygen. The band gap of indium oxide can be reduced to 2.89 eV by nitrogen doping. The In2O3:N film with (440) preferred orientation has a shorter photoresponse time than the (222) one.

nitrogen-doped indium oxide  /  magnetron sputtering  /  preferred orientation  /  photoelectric detection
孙辉, 沈龙海, 刘子童, 陈建金, 张芮馨, 程佳, 张兴来. 择优取向氮掺杂氧化铟薄膜的制备及其光电性能. 硅酸盐学报, 2023 , 51 (1) : 145 -151 . DOI: 10.14062/j.issn.0454-5648.20220468
Hui SUN, Longhai SHEN, Zitong LIU, Jianjin CHEN, Ruixin ZHANG, Jia CHENG, Xinglai ZHANG. Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (1) : 145 -151 . DOI: 10.14062/j.issn.0454-5648.20220468
Appendix
Less
Year 2023 volume 51 Issue 1
33
3
Cite this Article
BibTeX
Article Info
doi: 10.14062/j.issn.0454-5648.20220468
  • Receive Date：2022-06-13
  • Online Date：2026-10-20
  • Published：2023-01-20
Article Data
Affiliations
History
  • Received：2022-06-13
  • Revised：2022-07-17
Funding
Affiliations
    1.School of Science, Shenyang Ligong University, Shenyang 110159, China
    2.Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

Corresponding:

SHEN Longhai (1977-), male, Ph.D., Professor. E-mail:
ZHANG Xinglai (1984-), male, Ph.D., Associate Professor.
References
Share
https://castjournals.cast.org.cn/joweb/gsyxb/EN/10.14062/j.issn.0454-5648.20220468
Share to
QR

Scan QR to access full text

Cite this article
BibTeX
Citations
表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
关闭全屏
  • BibTeX
  • EndNote
  • RefWorks
  • TxT
Links
Articles
Latest Articles
Most Read
Collections
Updates
Events
News
Multimedia
About
About Us
Contact
No. 86 Xueyuan South Road, Haidian District, Beijing
100081
010-62662699(Operation and Technical Support)
qkjq@cast.org.cn

Copyright © 2025 China Association for Science and Technology. All rights reserved. For all open access content, the relevant licensing terms apply.
Sponsored by the Office of the Leading Group for Cybersecurity and Informatization of CAST, and supported by Science and Technology Review Publishing House