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Improved Sintering Behavior and Microwave Dielectric Properties for Ge4+Doped BaSnSi3O9 Ceramics
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Kang DU1, 2, Changzhi YIN1, 2, Jiaqing YANG1, 2, Meng ZHANG1, 2, Wenzhong LYU1, 2, Wen LEI1, 2
Journal of the Chinese Ceramic Society | 2023, 51(4) : 866 - 871
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Journal of the Chinese Ceramic Society | 2023, 51(4): 866-871
• Research Articles •
Improved Sintering Behavior and Microwave Dielectric Properties for Ge4+Doped BaSnSi3O9 Ceramics
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Kang DU1, 2, Changzhi YIN1, 2, Jiaqing YANG1, 2, Meng ZHANG1, 2, Wenzhong LYU1, 2, Wen LEI1, 2
Affiliations
  • 1.Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou 325035, Zhejiang, China
  • 2.School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

    • DU Kang (1993-), Male, Doctoral candidate. E-mail:

About Author:

DU Kang (1993-), Male, Doctoral candidate. E-mail:

Published: 2023-04-20 doi: 10.14062/j.issn.0454-5648.20220461
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Microwave dielectric ceramics are key materials for manufacturing 5G communication components. The microwave dielectric ceramics of BaSn(Si1-xGex)3O9(0≤x≤1.0) were prepared via conventional solid-state reactions, and the effect of substituting Ge4+ for Si4+ of BaSnSi3O9 ceramic on the sintering behavior, crystal structure, and microwave dielectric properties was investigated. The results show that the BaSnSi3O9 ceramic exhibits the porous microstructure and poor microwave dielectric properties (i.e., εr=6.61, Q×f=7 977 GHz at 15.03 GHz, and τf=-37.8×10-6/℃). The BaSn (Si1-xGex)3O9(0≤x≤1.0) solid solutions are obtained with Ge4+ substitution for Si4+, the crystal structure is a hexagonal structure with P-6c2 space group. The Ge4+ substitution for Si4+ can improve the microwave dielectric properties of BaSn(Si1-xGex)3O9(0≤x≤1.0) ceramics by optimising the sintering behavior and changing the crystal structural parameters. The Q×f values of BaSn(Si1-xGex)3O9(0≤x≤1.0) ceramics are mainly controlled by the relative covalency of Si/Ge—O and Sn—O bonds. As x=1.0, the BaSn(Si1-xGex)3O9 ceramic exhibits the optimal microwave dielectric properties (i.e., εr=8.53, Q×f=15 829 GHz at 14.41 GHz, and τf= -34.2×10-6 ℃-1).

ceramics  /  sintering behavior  /  crystal structural parameter  /  microwave dielectric properties
杜康, 尹长志, 杨佳庆, 张猛, 吕文中, 雷文. Ge4+取代对BaSnSi3O9陶瓷烧结行为和微波介电性能的优化. 硅酸盐学报, 2023 , 51 (4) : 866 -871 . DOI: 10.14062/j.issn.0454-5648.20220461
Kang DU, Changzhi YIN, Jiaqing YANG, Meng ZHANG, Wenzhong LYU, Wen LEI. Improved Sintering Behavior and Microwave Dielectric Properties for Ge4+Doped BaSnSi3O9 Ceramics[J]. Journal of the Chinese Ceramic Society, 2023 , 51 (4) : 866 -871 . DOI: 10.14062/j.issn.0454-5648.20220461
Appendix
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Year 2023 volume 51 Issue 4
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Article Info
doi: 10.14062/j.issn.0454-5648.20220461
  • Receive Date：2022-06-08
  • Online Date：2026-10-20
  • Published：2023-04-20
Article Data
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History
  • Received：2022-06-08
  • Revised：2022-07-02
Funding
Affiliations
    1.Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou 325035, Zhejiang, China
    2.School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Corresponding:

LEI Wen (1977-), Male, Ph.D., Professor. E-mail:
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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