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Effect of SiO2 Doping on Electrical Properties of ZnO-Bi2O3 Based Varistor Ceramics
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Jianke LIU, Jiaojiao CHEN, Wenbin CAO, Jinfeng SU, Zhizhi LI, Rongkai XU, Shihua LIU
Journal of the Chinese Ceramic Society | 2022, 50(9) : 2366 - 2373
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Journal of the Chinese Ceramic Society | 2022, 50(9): 2366-2373
• Research Articles •
Effect of SiO2 Doping on Electrical Properties of ZnO-Bi2O3 Based Varistor Ceramics
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Jianke LIU, Jiaojiao CHEN, Wenbin CAO, Jinfeng SU, Zhizhi LI, Rongkai XU, Shihua LIU
Affiliations
  • Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
  • LIU Jianke (1966-), male, Ph.D., Professor. E-mail:

About Author:

LIU Jianke (1966-), male, Ph.D., Professor. E-mail:

Published: 2022-09-20 doi: 10.14062/j.issn.0454-5648.20220158
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ZnO-Bi2O3-MnO2-Cr2O3 varistor ceramics doped with different amounts of silicon dioxide (SiO2) were prepared by a conventional solid-phase sintering method. The phase composition and microstructure of the samples were investigated by X-ray diffraction and scanning electron microscopy. The electrical properties were measured by sourcemetry and inductance capacitance resistance, and the double Schottky barrier parameters were measured by a capacitance-voltage characteristic method. The results show that when the frequency is near 105 Hz, the relative dielectric constant (εr) decreases rapidly since the polarization cannot change with the frequency of electric field, resulting in the corresponding loss peak. The loss peak (tanδ) firstly decreases and then increases with the increase of the doping amount, and its maximum tanδ is obtained witrhout SiO2 and the minimum tanδ is achieved at 1.0% SiO2. The value of tanδ at a frequency of 105 Hz is reduced by doping SiO2. The nonlinear coefficient firstly increases and then decreases with the increase of SiO2 doping amount. The value of α reaches 43.36, the value of φb is 1.98 eV at 10 kHz, the donor concentration is 2.97×1024 m-3, and the leakage current IL is 0.31 μA/cm2 at SiO2 doping amount of 1.0%.

silicon dioxide  /  zinc oxide  /  varistor ceramics  /  Schottky barrier  /  nonlinear coefficient  /  capacitance-voltage characteristic method
刘建科, 陈姣姣, 曹文斌, 苏锦锋, 李智智, 徐荣凯, 刘士花. SiO2掺杂对ZnO-Bi2O3基压敏陶瓷电学性能的影响. 硅酸盐学报, 2022 , 50 (9) : 2366 -2373 . DOI: 10.14062/j.issn.0454-5648.20220158
Jianke LIU, Jiaojiao CHEN, Wenbin CAO, Jinfeng SU, Zhizhi LI, Rongkai XU, Shihua LIU. Effect of SiO2 Doping on Electrical Properties of ZnO-Bi2O3 Based Varistor Ceramics[J]. Journal of the Chinese Ceramic Society, 2022 , 50 (9) : 2366 -2373 . DOI: 10.14062/j.issn.0454-5648.20220158
Year 2022 volume 50 Issue 9
31
8
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doi: 10.14062/j.issn.0454-5648.20220158
  • Receive Date:2022-03-03
  • Online Date:2026-10-20
  • Published:2022-09-20
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  • Received:2022-03-03
  • Revised:2022-04-03
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    Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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