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Surface Steps and Micropipes Characteristics in Initial Stage of SiC Single Crystal Growth
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Guanglei ZHONG, Guojie HU, Hejing WANG, Xuejian XIE, Xianglong YANG, Yan PENG, Xiufang CHEN, Xiaobo HU, Xiangang XU
Journal of the Chinese Ceramic Society | 2022, 50(8) : 2239 - 2244
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Journal of the Chinese Ceramic Society | 2022, 50(8): 2239-2244
• Research Articles •
Surface Steps and Micropipes Characteristics in Initial Stage of SiC Single Crystal Growth
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Guanglei ZHONG, Guojie HU, Hejing WANG, Xuejian XIE, Xianglong YANG, Yan PENG, Xiufang CHEN, Xiaobo HU, Xiangang XU
Affiliations
  • Shandong University, Institute of novel semiconductors, State Key Laboratory of Crystal Materials, Jinan 250100, China

    • ZHONG Guanglei (1995-), male, Doctoral candidate. E-mail:

About Author:

ZHONG Guanglei (1995-), male, Doctoral candidate. E-mail:

Published: 2022-08-20 doi: 10.14062/j.issn.0454-5648.20220027
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The growth of crystal in the initial stage have an impact on the quality of crystal in the subsequent growth. In this paper, the surface and micropipes morphology of SiC in the initial stage of growth was investigated by optical microscopy. At 8×104 Pa and 1 800-2 100 ℃, the growth step appears on the seed crystal surface due to the atomic migration. Also, the micropipes seriously disturbe the movement of normal step flow, and a circular pit occurs around the micropipes. And no polytype transformation occurs at the micropipes. At 2×104 Pa and 2 150-2 300 ℃, multiple SiC nuclei are formed in the center of the seed crystal surface. Obvious stress regions appear near the crystal edge due to the existence of micropipes. The stress is mainly in the region close to the micropipes and towards the crystal edge, indicating that the step flow moves from the center to the edge. In addition, SiC substrate was also characterized by atomic force microscopy, indicating that atom steps with different orientations appear on the substrate surface, which may originate from the step morphology of the crystal grown in the initial stage.

micropipe  /  silicon carbide  /  single crystals  /  stage flow  /  crystal growth
仲光磊, 胡国杰, 王鹤静, 谢雪健, 杨祥龙, 彭燕, 陈秀芳, 胡小波, 徐现刚. SiC单晶生长初期表面台阶及微管特性. 硅酸盐学报, 2022 , 50 (8) : 2239 -2244 . DOI: 10.14062/j.issn.0454-5648.20220027
Guanglei ZHONG, Guojie HU, Hejing WANG, Xuejian XIE, Xianglong YANG, Yan PENG, Xiufang CHEN, Xiaobo HU, Xiangang XU. Surface Steps and Micropipes Characteristics in Initial Stage of SiC Single Crystal Growth[J]. Journal of the Chinese Ceramic Society, 2022 , 50 (8) : 2239 -2244 . DOI: 10.14062/j.issn.0454-5648.20220027
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Year 2022 volume 50 Issue 8
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Article Info
doi: 10.14062/j.issn.0454-5648.20220027
  • Receive Date：2022-01-11
  • Online Date：2026-10-20
  • Published：2022-08-20
Article Data
Affiliations
History
  • Received：2022-01-11
  • Revised：2022-02-03
Funding
Affiliations
    Shandong University, Institute of novel semiconductors, State Key Laboratory of Crystal Materials, Jinan 250100, China

Corresponding:

XIE Xuejian (1992-), male, Professor; E-mail:
YANG Xianglong (1990-), male, Associate Professor.
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表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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