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Electromagnetic Properties and First-Principles Calculation of La3+ Doped SiC Nanowires
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Wangcong ZHOU, Xiangcheng LI, Yingli ZHU, Ping'an CHEN, Boquan ZHU
Journal of the Chinese Ceramic Society | 2022, 50(7) : 1919 - 1928
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Journal of the Chinese Ceramic Society | 2022, 50(7): 1919-1928
• Research Articles •
Electromagnetic Properties and First-Principles Calculation of La3+ Doped SiC Nanowires
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Wangcong ZHOU, Xiangcheng LI, Yingli ZHU, Ping'an CHEN, Boquan ZHU
Affiliations
  • The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China
  • ZHOU Wangcong (1997-), male, Master candidate. E-mail:

About Author:

ZHOU Wangcong (1997-), male, Master candidate. E-mail:

Published: 2022-07-20 doi: 10.14062/j.issn.0454-5648.20210954
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As one of microwave absorbing materials, SiC nanowires have a good microwave absorbing property, a wide microwave absorbing bandwidth and a low density. However, the poor impedance matching condition and low conductivity of SiC affect the improvement of its microwave absorbing property. To adjust the electronic structure of SiC and improve its electromagnetic properties, La3+ doped SiC nanowires were synthesized via carbothermal reduction at 1 600 ℃ with silicon powder, activated carbon and La2O3 powder as raw materials. The results show that doping La3+ can increase the aspect ratio and stacking fault density of SiC nanowires, and enhance their ability to form three-dimensional network structure and interface polarization, and improve their dielectric properties. At 2-18 GHz, the real part of permittivity increases from 3.08-13.48 (x = 0) to 3.33-19.75 (x = 1.0%), and the imaginary part of permittivity increases from 3.45-6.98 (x = 0) to 5.03-11.56 (x = 1.0%). Also, La3+ doping improves the conductivity of SiC nanowires and enhances its conductivity loss. SiC nanowires doped with 1.0% La3+ achieve a minimum reflection loss (RL) of -31.29 dB with the thickness of 2.0 mm and the effective absorption bandwidth with RL<-10 dB of 7.18 GHz due to the simultaneous enhancement of interface polarization and conductivity loss of SiC nanowires. The electronic structures of SiC nanowires and La3+doped SiC nanowires were analyzed via the first-principle calculations. The results show that the band gap of SiC nanowires decreases after La3+ doping, verifying the enhancement of their conductivity. La3+ doping can increase the stacking fault density of SiC nanowires and solve a problem that the stacking fault density decreases. The results of this study can provide an idea for the synthesis of SiC nanowires with a high electromagnetic absorbing capability.

silicon carbide nanowires  /  lanthanum ion doping  /  electromagnetic wave absorption  /  first principles  /  effective absorption bandwidth
周王聪, 李享成, 朱颖丽, 陈平安, 朱伯铨. La3+掺杂SiC纳米线的电磁性能与第一性原理计算. 硅酸盐学报, 2022 , 50 (7) : 1919 -1928 . DOI: 10.14062/j.issn.0454-5648.20210954
Wangcong ZHOU, Xiangcheng LI, Yingli ZHU, Ping'an CHEN, Boquan ZHU. Electromagnetic Properties and First-Principles Calculation of La3+ Doped SiC Nanowires[J]. Journal of the Chinese Ceramic Society, 2022 , 50 (7) : 1919 -1928 . DOI: 10.14062/j.issn.0454-5648.20210954
Year 2022 volume 50 Issue 7
32
5
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Article Info
doi: 10.14062/j.issn.0454-5648.20210954
  • Receive Date:2021-11-08
  • Online Date:2026-10-20
  • Published:2022-07-20
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  • Received:2021-11-08
  • Revised:2021-11-29
Funding
Affiliations
    The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China

Corresponding:

LI Xiangcheng (1978-), male, Ph.D., Professor. E-mail:
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表12种不同金属材料的力学参数
科
Family
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Number of
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Number of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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