Home Journals Articles Updates About
CN
image
收藏切换
Numerical Simulation of Silicon Facet Dendrite Growth Based on CA-LBM 3D Model
收藏切换
Sen DU1, Wang MA2, Hui CHEN1, Ri LI1, Hongjian CHEN1
Journal of the Chinese Ceramic Society | 2021, 49(9) : 1964 - 1969
Less
收藏切换
Journal of the Chinese Ceramic Society | 2021, 49(9): 1964-1969
• Research Article •
Numerical Simulation of Silicon Facet Dendrite Growth Based on CA-LBM 3D Model
Full
Sen DU1, Wang MA2, Hui CHEN1, Ri LI1, Hongjian CHEN1
Affiliations
  • 1.School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300401, China
  • 2.Shijiazhuang Haishan Industrial Development Corporation, Shijiazhuang 050208, China

    • DU Sen(1994-), male, Master candidate. E-mail:

About Author:

DU Sen(1994-), male, Master candidate. E-mail:

Published: 2021-09-20 doi: 10.14062/j.issn.0454-5648.20210023
Outline
收藏切换

In order to analyze the growth mechanism of silicon faceted dendrite and reproduce its growth realistically, a 3D model based on cellular automaton-lattice Boltzmann method was proposed. The growth of silicon dendrite was simulated via the cellular automaton. The temperature field of solidifying silicon crystal was calculated by the lattice Boltzmann method. The cellular automaton model and the lattice Boltzmann method were coupled together by the latent heat of solidification released during the growth of silicon crystals and a high anisotropy function was introduced, thus simulating the growth of 3D silicon faceted dendrite. The effects of interfacial energy anisotropy and initial undercooling on the morphology of 3D silicon faceted dendrite were analyzed. The results show that 3D silicon faceted dendrites have a strong anisotropy. The 3D model can simulate the growth of silicon faceted dendrites more realistically and accurately.

3D numerical simulation  /  silicon faceted dendrite  /  lattice Boltzmann method  /  cellular automaton
杜森, 马旺, 陈辉, 李日, 陈洪建. 基于CA-LBM三维模型的硅小平面枝晶生长数值模拟. 硅酸盐学报, 2021 , 49 (9) : 1964 -1969 . DOI: 10.14062/j.issn.0454-5648.20210023
Sen DU, Wang MA, Hui CHEN, Ri LI, Hongjian CHEN. Numerical Simulation of Silicon Facet Dendrite Growth Based on CA-LBM 3D Model[J]. Journal of the Chinese Ceramic Society, 2021 , 49 (9) : 1964 -1969 . DOI: 10.14062/j.issn.0454-5648.20210023
Appendix
Less
Year 2021 volume 49 Issue 9
25
6
Cite this Article
BibTeX
Article Info
doi: 10.14062/j.issn.0454-5648.20210023
  • Receive Date：2021-01-07
  • Online Date：2026-10-30
  • Published：2021-09-20
Article Data
Affiliations
History
  • Received：2021-01-07
  • Revised：2021-01-23
Funding
Affiliations
    1.School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300401, China
    2.Shijiazhuang Haishan Industrial Development Corporation, Shijiazhuang 050208, China

Corresponding:

CHEN Hongjian(1966-), male, Ph.D., Professor. E-mail:
LI Ri(1966-), male, Ph.D., Professor.
References
Share
https://castjournals.cast.org.cn/joweb/gsyxb/EN/10.14062/j.issn.0454-5648.20210023
Share to
QR

Scan QR to access full text

Cite this article
BibTeX
Citations
表12种不同金属材料的力学参数
科
Family		 属数
Number of
genus		 种数
Number of
species		 占总种数比例
Percentage of
total species (%)		 属
Genus		 种数
Number of
species		 占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
关闭全屏
  • BibTeX
  • EndNote
  • RefWorks
  • TxT
Links
Articles
Latest Articles
Most Read
Collections
Updates
Events
News
Multimedia
About
About Us
Contact
No. 86 Xueyuan South Road, Haidian District, Beijing
100081
010-62662699(Operation and Technical Support)
qkjq@cast.org.cn

Copyright © 2025 China Association for Science and Technology. All rights reserved. For all open access content, the relevant licensing terms apply.
Sponsored by the Office of the Leading Group for Cybersecurity and Informatization of CAST, and supported by Science and Technology Review Publishing House