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Growth of Six Inches SiC Single Crystals Without Micropipe Defect
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Fusheng ZHANG, Kun YANG, Xinhui LIU, Yajuan LU, Xiaolong NIU, Yuanhang SHANG, Tingting LI
Journal of the Chinese Ceramic Society | 2021, 49(4) : 736 - 742
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Journal of the Chinese Ceramic Society | 2021, 49(4): 736-742
Growth of Six Inches SiC Single Crystals Without Micropipe Defect
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Fusheng ZHANG, Kun YANG, Xinhui LIU, Yajuan LU, Xiaolong NIU, Yuanhang SHANG, Tingting LI
Affiliations
  • Hebei Synlight Crystal Co., Ltd, Baoding 071051, Hebei, China
  • ZAHNG Fusheng (1989-), male, Ph.D. E-mail:

About Author:

ZAHNG Fusheng (1989-), male, Ph.D. E-mail:

Published: 2021-04-20 doi: 10.14062/j.issn.0454-5648.20200508
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The micropipe (MP) in silicon carbide (SiC) single crystal substrate is a fatal defect for SiC-based devices, which will seriously affect the yield of SiC power devices. In this paper, the 6 in n-type 4H-SiC single crystals without micropipe defect were prepared by the optimized growth design based on physical vapor transport (PVT) method. The effects of the optimized growth design on the elimination of micropipes were also studied. Based on the principle of crystallography and kinetics, the mechanism of micropipe decomposition and closing is clarified. In summary, the optimized growth design adopted in this paper not only promotes the stability of SiC single crystal growth, but also can improve the crystalline quality of SiC single crystal, and can quickly reduce the density of micropipes. The prepared large size 6 in n-type 4H-SiC single crystals without micropipe defect will be more suitable for making high-voltage and ultra-high-voltage power devices.

micropipe defect  /  4H-silicon carbide single crystals  /  micropipe closing
张福生, 杨昆, 刘新辉, 路亚娟, 牛晓龙, 尚远航, 李婷婷. 无微管缺陷六英寸SiC单晶的制备. 硅酸盐学报, 2021 , 49 (4) : 736 -742 . DOI: 10.14062/j.issn.0454-5648.20200508
Fusheng ZHANG, Kun YANG, Xinhui LIU, Yajuan LU, Xiaolong NIU, Yuanhang SHANG, Tingting LI. Growth of Six Inches SiC Single Crystals Without Micropipe Defect[J]. Journal of the Chinese Ceramic Society, 2021 , 49 (4) : 736 -742 . DOI: 10.14062/j.issn.0454-5648.20200508
Year 2021 volume 49 Issue 4
29
11
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Article Info
doi: 10.14062/j.issn.0454-5648.20200508
  • Receive Date:2020-07-09
  • Online Date:2026-10-30
  • Published:2021-04-20
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History
  • Received:2020-07-09
  • Revised:2020-08-17
Funding
Affiliations
    Hebei Synlight Crystal Co., Ltd, Baoding 071051, Hebei, China

Corresponding:

YANG Kun (1988-), male, Ph.D., Senior Engineer. E-mail:
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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