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Effects of Thickness and Ultraviolet Irradiation on Structural, Optical and Electrical Properties of F-doped SnO2 Films Prepared by Reactive Sputtering
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Bailin ZHU, Xiaoxiao SONG, Ye TAO, Changhong YI, Jun WU
Journal of the Chinese Ceramic Society | 2020, 48(4) : 491 - 498
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Journal of the Chinese Ceramic Society | 2020, 48(4): 491-498
Effects of Thickness and Ultraviolet Irradiation on Structural, Optical and Electrical Properties of F-doped SnO2 Films Prepared by Reactive Sputtering
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Bailin ZHU, Xiaoxiao SONG, Ye TAO, Changhong YI, Jun WU
Affiliations
  • State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China
  • ZHU Bailin (1977-), male, Professor. E-mail:

About Author:

ZHU Bailin (1977-), male, Professor. E-mail:

Published: 2020-04-20 doi: 10.14062/j.issn.0454-5648.20190527
Outline
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F-doped SnO2 (FTO) thin films with the thickness of 20-400 nm were prepared via reactive magnetron sputtering at 150-300 ℃ using Sn+SnF2 as a target, and the prepared FTO films were further treated by ultraviolet (UV) irradiation. The effects of film thickness and UV irradiation time on the structural, optical and electrical properties of FTO films were investigated. The results show that the crystallinity of FTO films improves and the preferred orientation remains (211) plane with the increase of film thickness or substrate temperature. Meanwhile, the compressive stress existed in the films increases and the conductive properties of films degrade. The transmittance of the films firstly decreases and then increases, and their energy gap (Eg) firstly increases and then becomes stable when the film thickness increases. Increasing substrate temperature can increase the transmittance and Eg of the films. UV irradiation can increase the carrier concentration of the films, thus enhancing the conductive properties of the film, but it has little effect on the transmittance of the film. In addition, the influence of film thickness on the structural, optical and electrical properties of FTO films was discussed, and the mechanism of improving the optical and electrical properties of FTO film by UV irradiation was analyzed. This study could provide a reference for the preparation of FTO thin films by magnetron sputtering technology and the improvement of their properties.

reactive sputtering  /  fluorine-doped stannic oxide film  /  transparent conductive properties  /  ultraviolet irradiation
祝柏林, 宋肖肖, 陶冶, 易昌鸿, 吴隽. 膜厚与紫外光辐照对反应溅射法制备的F掺杂SnO2薄膜结构与光电性能的影响. 硅酸盐学报, 2020 , 48 (4) : 491 -498 . DOI: 10.14062/j.issn.0454-5648.20190527
Bailin ZHU, Xiaoxiao SONG, Ye TAO, Changhong YI, Jun WU. Effects of Thickness and Ultraviolet Irradiation on Structural, Optical and Electrical Properties of F-doped SnO2 Films Prepared by Reactive Sputtering[J]. Journal of the Chinese Ceramic Society, 2020 , 48 (4) : 491 -498 . DOI: 10.14062/j.issn.0454-5648.20190527
Year 2020 volume 48 Issue 4
31
9
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Article Info
doi: 10.14062/j.issn.0454-5648.20190527
  • Receive Date:2019-07-23
  • Online Date:2026-10-29
  • Published:2020-04-20
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  • Received:2019-07-23
  • Revised:2019-11-06
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    State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China
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表12种不同金属材料的力学参数
科
Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)
属
Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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