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Process fluctuation influence on single event upset in sub-20 nm FinFET SRAM
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Qian SUN1, 2, Yang GUO1, 2, *, Bin LIANG1, 2, Yaqing CHI1, 2, Ming TAO3, Deng LUO1, 2, Jianjun CHEN1, 2, Hanhan SUN1, 2, Chunmei HU1, 2, Yahao FANG1, 2, Yulin GAO1, 2, Jing XIAO3
Journal of National Niversity of Defense Technology | 2025, 47(6) : 264 - 273
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Journal of National Niversity of Defense Technology | 2025, 47(6): 264-273
• Control Science and Engineering·Information and Communication Engineering·Electronic Science and Technology •
Process fluctuation influence on single event upset in sub-20 nm FinFET SRAM
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Qian SUN1, 2, Yang GUO1, 2, *, Bin LIANG1, 2, Yaqing CHI1, 2, Ming TAO3, Deng LUO1, 2, Jianjun CHEN1, 2, Hanhan SUN1, 2, Chunmei HU1, 2, Yahao FANG1, 2, Yulin GAO1, 2, Jing XIAO3
Affiliations
  • 1.College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
  • 2.Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha 410073, China
  • 3.College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
Published: 2025-12-28 doi: 10.11887/j.issn.1001-2486.24010004
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To investigate the process fluctuation influence on SRAM（static random-access memory）single event upset in sub-20 nm FinFET（fin field-effect transistor）process，a high precision three dimensional technology computer-aid design model based on commercial process fluctuations was established，then simulated to find the FinFET SRAM single event upset threshold under different process corners.The simulation results show that the FinFET SRAM upset threshold has less variation induced by process corner fluctuation.Meanwhile，the sensitive positions of SRAM are on the N-complementary metal oxide semiconductor.Then，to understand the the impact of specific process parameter fluctuations on the single event upset threshold，the process fluctuation factor impact on single event upset was discussed，including fin width，fin height，the oxide thickness and the work function fluctuation.The simulation results show that the first two factors did not affect the upset threshold，while the latter two factors caused slight fluctuations in the upset threshold.Significant reduction in the impact of process fluctuations on FinFET SRAM single event upset threshold is firstly found，which is of great significance for the development of highly consistent radiation hardened aerospace integrated circuits.

FinFET  /  single event upset  /  static random-access memory  /  process fluctuation  /  process corner
Qian SUN, Yang GUO, Bin LIANG, Yaqing CHI, Ming TAO, Deng LUO, Jianjun CHEN, Hanhan SUN, Chunmei HU, Yahao FANG, Yulin GAO, Jing XIAO. Process fluctuation influence on single event upset in sub-20 nm FinFET SRAM[J]. Journal of National Niversity of Defense Technology, 2025 , 47 (6) : 264 -273 . DOI: 10.11887/j.issn.1001-2486.24010004
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Year 2025 volume 47 Issue 6
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doi: 10.11887/j.issn.1001-2486.24010004
  • Receive Date：2024-01-04
  • Online Date：2026-04-16
  • Published：2025-12-28
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  • Received：2024-01-04
Affiliations
    1.College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China
    2.Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha 410073, China
    3.College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
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