收藏切换
Study on Influence of High-temperature Gate Bias and Electron Irradiation on Threshold Voltage of SiC MOSFET
收藏切换
PDF
Ziyang ZHANG1, 2, Lin LIANG1, 2, Hai SHANG1, 2, Keyan SHENG1, Jiang HUANG1
Journal of Power Supply | 2024, 22(6) : 288 - 294
Less
收藏切换
Journal of Power Supply | 2024, 22(6): 288-294
Power Semiconductor Devices
Study on Influence of High-temperature Gate Bias and Electron Irradiation on Threshold Voltage of SiC MOSFET
Full
Ziyang ZHANG1, 2, Lin LIANG1, 2, Hai SHANG1, 2, Keyan SHENG1, Jiang HUANG1
Affiliations
  • 1 State Key Laboratory of Advanced Electromagnetic Technology, School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
  • 2 Engineering Research Center of Power Safety and Efficiency of Ministry of Education Huazhong University of Science and Technology Wuhan 430074 China
Published: 2024-11-30 doi: 10.13234/j.issn.2095-2805.2024.6.288
Outline
收藏切换

To study the influence of electron irradiation on the reliability of silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET) with different aging degrees of the gate oxide, the electrical characteristics of SiC MOSFET were analyzed by combining high-temperature gate bias and electron irradiation experiments. The influence of electron irradiation on the threshold voltage of SiC MOSFET after the gate oxide was stressed by high temperature and a strong electric field was discussed. To avoid the impact of the packaging material on the threshold voltage under high temperature and electron irradiation, the device under test was exposed to air during the experiment. Experimental results show that the threshold voltage after the high-temperature positive gate bias experiment was more sensitive to electron irradiation. The exponential relationship of the influence of electron irradiation on the threshold voltage of SiC MOSFET after the high-temperature gate bias aging was proposed. The threshold voltage after the high-temperature gate bias at 39 V and 150 °C for 2 h can be restored to the initial value by 0.2 MeV and 300 kGy electron irradiation. A basic numerical model of SiC MOSFET was established in the Sentaurus TCAD simulator. By setting the electron concentration and hole traps in the oxide, the effect of high-temperature gate bias and electron irradiation on the threshold voltage of the device was simulated, and the threshold voltage recovery mechanism was discussed.

Silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)  /  high-temperature gate bias  /  electron irradiation  /  threshold voltage
Ziyang ZHANG, Lin LIANG, Hai SHANG, Keyan SHENG, Jiang HUANG. Study on Influence of High-temperature Gate Bias and Electron Irradiation on Threshold Voltage of SiC MOSFET[J]. Journal of Power Supply, 2024 , 22 (6) : 288 -294 . DOI: 10.13234/j.issn.2095-2805.2024.6.288
  • Natural Science Foundation of Hubei Province(2020CFB806)
  • Program for HUST Academic Frontier Youth Team(2019QYTD06)
Year 2024 volume 22 Issue 6
PDF
384
157
Cite this Article
BibTeX
Article Info
doi: 10.13234/j.issn.2095-2805.2024.6.288
  • Receive Date:2021-12-27
  • Online Date:2025-07-19
  • Published:2024-11-30
Article Data
Affiliations
History
  • Received:2021-12-27
  • Revised:2022-03-10
  • Accepted:2022-05-19
Funding
Natural Science Foundation of Hubei Province(2020CFB806)
Program for HUST Academic Frontier Youth Team(2019QYTD06)
Affiliations
    1 State Key Laboratory of Advanced Electromagnetic Technology, School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China
    2 Engineering Research Center of Power Safety and Efficiency of Ministry of Education Huazhong University of Science and Technology Wuhan 430074 China
References
Share
https://castjournals.cast.org.cn/joweb/dyxb/EN/10.13234/j.issn.2095-2805.2024.6.288
Share to
QR

Scan QR to access full text

Cite this article
BibTeX
Citations
表12种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)

Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
关闭全屏
  • BibTeX
  • EndNote
  • RefWorks
  • TxT