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Improved Gate Drive Design to Suppress Crosstalk of SiC MOSFET Bridge Arm
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Qinghui LI, Sanbo PAN
Journal of Power Supply | 2024, 22(5) : 300 - 308
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Journal of Power Supply | 2024, 22(5): 300-308
Power Semiconductor Devices
Improved Gate Drive Design to Suppress Crosstalk of SiC MOSFET Bridge Arm
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Qinghui LI, Sanbo PAN
Affiliations
  • School of Electrical Engineering Shanghai Dianji University Shanghai 201306 China
Published: 2024-09-30 doi: 10.13234/j.issn.2095-2805.2024.5.300
Outline
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In the case of high switching frequency, the bridge arm crosstalk caused by the parasitic parameters of SiC MOSFET in the traditional drive are more serious. However, most of the existing crosstalk suppression drive circuits suppress the crosstalk at the expense of increasing the switching loss, prolonging the switching delay and adding the control complexity. Therefore, based on the idea of reducing the impedance of the drive loop in the process of crosstalk generation, a novel active Miller clamp gate drive design is proposed by adding PNP triodes connected in series with diodes and capacitors between the gate and source, and its working principle is analyzed. The parallel capacitance parameters of the improved drive circuit are also calculated and designed. Finally, an experimental platform of double-pulse test for a synchronous Buck converter with DC bus voltage of 300 V was built, and the novel crosstalk suppression drive circuit was compared with the traditional and typical crosstalk suppression circuits in terms of the positive and negative crosstalk voltage spike suppression effects and the turn-on and turn-off speeds. Experimental results show that compared with those of the traditional and typical crosstalk suppression circuits, the positive and negative voltage spikes of the proposed crosstalk suppression drive circuit were reduced by 80% and 40%, respectively, and the switching delay of the device was reduced by 32% in the meantime.

Silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET)  /  crosstalk suppression  /  bridge circuit  /  gate drive circuit
Qinghui LI, Sanbo PAN. Improved Gate Drive Design to Suppress Crosstalk of SiC MOSFET Bridge Arm[J]. Journal of Power Supply, 2024 , 22 (5) : 300 -308 . DOI: 10.13234/j.issn.2095-2805.2024.5.300
Year 2024 volume 22 Issue 5
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Article Info
doi: 10.13234/j.issn.2095-2805.2024.5.300
  • Receive Date:2021-08-11
  • Online Date:2025-07-20
  • Published:2024-09-30
Article Data
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History
  • Received:2021-08-11
  • Revised:2021-10-10
  • Accepted:2021-10-13
Affiliations
    School of Electrical Engineering Shanghai Dianji University Shanghai 201306 China
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表12种不同金属材料的力学参数

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Number of
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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