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Research on Influence of Drain-source Voltage on Accurate Measurement of SiC MOSFET Threshold Voltage
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Bojun YAO, Chunsheng GUO, Shaoxiong CUI, Jiapeng LI, Yamin ZHANG
Journal of Power Supply | 2024, 22(3) : 258 - 263
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Journal of Power Supply | 2024, 22(3): 258-263
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Research on Influence of Drain-source Voltage on Accurate Measurement of SiC MOSFET Threshold Voltage
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Bojun YAO, Chunsheng GUO, Shaoxiong CUI, Jiapeng LI, Yamin ZHANG
Affiliations
  • School of Microelectronics Beijing University of Technology Beijing 100124 China
Published: 2024-05-30 doi: 10.13234/j.issn.2095-2805.2024.3.258
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Compared with that in a Si device, the area of near interface oxide traps in a SiC MOSFET is wider, and the corresponding density of traps is two orders of magnitude higher. A lot of traps which are continuously capturing or releasing charges will cause the threshold voltage (Vt) to fluctuate with time, leading to the difficulty in accurately and repeatedly measuring the value of Vith. In the standard method, the value of Vith is measured using a preprocessing method to ensure the consistence in measuring the trap charge state in each time. However, the preprocessed trap state which is affected by drain-source voltages is not taken into account in the standard method, which will bring errors to the Vth test. Aimed at this problem, the transfer curves under the influences of different drain-source voltage pulses were measured at first, which show the effects of different drain-source voltages on Vth. Second, the influence of drain-source voltage on the trap charge state was analyzed based on the transient current method, thus clarifying the mechanism of the influence of drain-source voltage on traps. Finally, the influences of different drain-source voltages on Vith measurement were com-pared. Results indicate that the drain-source voltage affects the positive and negative electric field between the gate and drain, thereby affecting the trap charge state and causing the Vith drift. It is suggested that a smaller drain-source voltage should be used when measuring Vith to improve the measurement accuracy and reduce errors caused by testing factors in reliability experiments.

Threshold voltage  /  repeatability  /  SiC MOSFET  /  gate structure
Bojun YAO, Chunsheng GUO, Shaoxiong CUI, Jiapeng LI, Yamin ZHANG. Research on Influence of Drain-source Voltage on Accurate Measurement of SiC MOSFET Threshold Voltage[J]. Journal of Power Supply, 2024 , 22 (3) : 258 -263 . DOI: 10.13234/j.issn.2095-2805.2024.3.258
Year 2024 volume 22 Issue 3
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doi: 10.13234/j.issn.2095-2805.2024.3.258
  • Receive Date:2024-01-31
  • Online Date:2025-07-21
  • Published:2024-05-30
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  • Received:2024-01-31
  • Revised:2024-04-07
  • Accepted:2024-04-18
Affiliations
    School of Microelectronics Beijing University of Technology Beijing 100124 China
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表12种不同金属材料的力学参数

Family
属数
Number of
genus
种数
Number of
species
占总种数比例
Percentage of
total species (%)

Genus
种数
Number of
species
占总种数比例
Percentage of total
species (%)
鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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