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The silicon carbide (SiC) device is considered as a semiconductor device with high temperature resistance, and a careful study on its loss and heat dissipation is required when it is applied to high-power-density and high-temperature scenarios. The maximum current conduction capability of SiC MOSFET power module at high temperature is studied, and the relationship between electrical performance and heat dissipation is taken into account. Based on an electro-thermal coupling model of SiC MOSFET device and a heat dissipation model of the cooling system, the mechanism of thermal runaway process is analyzed. A co-simulation is conducted to determine the current conduction capability of one SiC power module at high temperature, and the simulation error with respect to the experimental result is about 4%, which verifies the effectiveness of the proposed method.
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| 科 Family | 属数 Number of genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) | 属 Genus | 种数 Number of species | 占总种数比例 Percentage of total species (%) |
|---|---|---|---|---|---|---|
| 鹅膏菌科Amanitaceae | 2 | 11 | 5.26 | 鹅膏菌属 Amanita | 10 | 4.78 |
| 小菇科 Mycenaceae | 2 | 12 | 5.74 | 丝盖伞属 Inocybe | 5 | 2.39 |
| 多孔菌科 Polyporaceae | 8 | 14 | 6.70 | 蜡蘑属 Laccaria | 5 | 2.39 |
| 红菇科 Russulaceae | 3 | 23 | 11.00 | 小皮伞属 Marasmius | 6 | 2.87 |
| 小菇属 Mycena | 11 | 5.26 | ||||
| 光柄菇属 Pluteus | 5 | 2.39 | ||||
| 红菇属 Russula | 17 | 8.13 | ||||
| 栓菌属 Trametes | 5 | 2.39 |
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