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High thermal stability chalcogenide phase-change materials for embedded memory applications
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Ruobing Wanga, Ziqi Wana, b, Xixi Zoua, c, Shanwen Chena, b, Sannian Songa, Xilin Zhoua, *, Zhitang Songa
Review of Materials Research | 2025, 1(1) : 100015
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Review of Materials Research | 2025, 1(1): 100015
• CONCISE REVIEW •
High thermal stability chalcogenide phase-change materials for embedded memory applications
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Ruobing Wanga, Ziqi Wana, b, Xixi Zoua, c, Shanwen Chena, b, Sannian Songa, Xilin Zhoua, *, Zhitang Songa
Affiliations
  • aState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
  • bUniversity of Chinese Academy of Sciences, Beijing, 100049, China
  • cSchool of Physical Science and Techonlogy, ShanghaiTech University, Shanghai, 201210, China
Published: 2025-04-08 doi: 10.1016/j.revmat.2025.100015
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Chalcogenide phase-change materials are capable of switching rapidly between a disordered amorphous phase and an ordered crystalline phase, associating with the pronounced differences in electrical and optical properties. The resistance contrast is widely used for data storage in phase-change memories (PCMs). As the most promising emerging non-volatile memory, PCMs have been intensively explored for embedded data storage applications. The key challenge of embedded PCMs (ePCMs) is to realize reliable electrical switching performance in an environment with high thermal budget, in which the thermal stability of chalcogenide phase-change materials is crucial to retain the encoded information. We present a review of the material engineering of chalcogenide phase-change materials by doping to address the high thermal stability challenge. The mechanism of performance optimization and industrial applications of the chalcogenide materials are also included, which are important for the development of ePCMs with high thermal stability and excellent performance.

Phase-change material  /  Embedded memory  /  Thermal stability  /  GeSbTe
Ruobing Wang, Ziqi Wan, Xixi Zou, Shanwen Chen, Sannian Song, Xilin Zhou, Zhitang Song. High thermal stability chalcogenide phase-change materials for embedded memory applications[J]. Review of Materials Research, 2025 , 1 (1) : 100015 - . DOI: 10.1016/j.revmat.2025.100015
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Funding
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  • National Key Research and Development Program of China(2023YFB4404500)
  • Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0670000)
  • National Natural Science Foundation of China(92164302; 62404233; 62174168)
  • Science and Technology Council of Shanghai(23JC1400900; 24YF2754700)
  • Autonomous Deployment Project of State Key Laboratory of Materials for Integrated Circuits(SKLJC-Z2024-A01)
  • China Postdoctoral Science Foundation(2023TQ0363; and 2024M753370)
  • Postdoctoral Fellowship Program of CPSF(GZC20232839)
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Year 2025 volume 1 Issue 1
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Article Info
doi: 10.1016/j.revmat.2025.100015
  • Receive Date：2025-03-21
  • Online Date：2026-06-10
  • Published：2025-04-08
Article Data
Affiliations
History
  • Received：2025-03-21
  • Revised：2025-04-06
  • Accepted：2025-04-06
Funding
National Key Research and Development Program of China(2023YFB4404500)
Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0670000)
National Natural Science Foundation of China(92164302; 62404233; 62174168)
Science and Technology Council of Shanghai(23JC1400900; 24YF2754700)
Autonomous Deployment Project of State Key Laboratory of Materials for Integrated Circuits(SKLJC-Z2024-A01)
China Postdoctoral Science Foundation(2023TQ0363; and 2024M753370)
Postdoctoral Fellowship Program of CPSF(GZC20232839)
Affiliations
    aState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
    bUniversity of Chinese Academy of Sciences, Beijing, 100049, China
    cSchool of Physical Science and Techonlogy, ShanghaiTech University, Shanghai, 201210, China

Corresponding:

* E-mail address: (X. Zhou).
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https://castjournals.cast.org.cn/joweb/rmr/EN/10.1016/j.revmat.2025.100015
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