Research

Research ›› 2024, Vol. 7 ›› Issue (2) : 0309 . DOI: 10.34133/research.0309

Research Article

Strain Engineering and Halogen Compensation of Buried Interface in Polycrystalline Halide Perovskites

Bin Zhou ¹ ,
Chuanzhen Shang ¹ ,
Chenyun Wang ¹ ,
Duo Qu ¹ ,
Jingyuan Qiao ¹ ,
Xinyue Zhang ¹ ,
Wenying Zhao ¹ ,
Ruilin Han ¹ ,
Shuxin Dong ³ ,
Yuhe Xue ⁴ ,
You Ke ¹ ,
Fengjun Ye ⁷ ,
Xiaoyu Yang ⁸ ,
Yongguang Tu ¹^,²^,^* ,
Wei Huang ¹^,²^,⁵^,⁶

Author information +

¹Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) & Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China.

²Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo 315103, China.

³Honors College, Northwestern Polytechnical University, Xi'an 710072, Shaanxi, China.

⁴ Queen Mary University of London Engineering School, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China.

⁵Key Laboratory of Flexible Electronics (KLoFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), NanjingTech University, Nanjing, Jiangsu 211816, China.

⁶Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.

⁷ Beijing Solarverse Optoelectronic Technology Co. Ltd, Beijing 100176, China.

⁸ Intelligent Display Research Institute, Leyard Optoelectronic Co. Ltd, Beijing 100091, China.

^* Address correspondence to: iamygtu@nwpu.edu.cn

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Received	Accepted	Published
2023-11-11	2024-01-10
Issue Date
2025-07-24

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